Patents by Inventor Chongying Xu
Chongying Xu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220267492Abstract: A modified film-forming resin containing an acid inhibitor is formed by polymerizing a film-forming resin monomer and an acid inhibitor monomer. The modified film-forming resin includes film-forming functional groups and acid inhibitor functional groups, so that the modified film-forming resin can be used as a matrix resin, and has an acid inhibition effect: wherein n in the general formula (I) is 5-200. A preparation method for the modified film-forming resin and a photoresist composition of the modified film-forming resin are also provided. When the modified film-forming resin is applied to the photoresist composition, components of the photoresist composition are uniformly dispersed, so that stable photolithography performance of a photoresist can be ensured, resolution and line width roughness of the photoresist are effectively ensured and improved, and film-forming ability is good, thereby effectively avoiding undesirable phenomena such as embrittlement and peeling of a photoresist film.Type: ApplicationFiled: April 27, 2022Publication date: August 25, 2022Applicants: NINGBO NATA OPTO-ELECTRONIC MATERIAL CO., LTD., JIANGSU NATA OPTO- ELECTRONIC MATERIAL CO., LTD.Inventors: Dagong GU, Guoqiang QI, Shaoshan YU, Ling CHEN, Dongsheng XU, Tao FANG, Zhibiao MAO, Chongying XU
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Publication number: 20220234985Abstract: The preparation method for the diester structure monomer includes the following steps: dissolving glycolate in a reaction solvent to prepare a glycolate solution; mixing the glycolate solution with triethylamine in a protective atmosphere, and cooling to form a mixture; and keeping the protective atmosphere unchanged, and adding the methacryloyl chloride to the mixture for esterification to generate a diester structure monomer. The diester structure monomer generated by the preparation method for the diester structure monomer has a long diester side chain and a group with a small volume and high acid sensitivity. As a result, a resin synthesized from the diester structure monomer has good adhesive force and film-forming property, high deprotection efficiency and plasticity, and the hardness and brittleness of the resin are improved. Moreover, the prepared diester acid protected structure monomer has the advantages of high yield, low by-product content and easy separation and purification.Type: ApplicationFiled: April 12, 2022Publication date: July 28, 2022Applicant: NINGBO NATA OPTO-ELECTRONIC MATERIAL CO., LTD.Inventors: Shaoshan YU, Dagong GU, Dongsheng XU, Tao FANG, Guoqiang QI, Xiao MA, Zhibiao MAO, Chongying XU
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Patent number: 10895010Abstract: Apparatus and method for volatilizing a source reagent susceptible to particle generation or presence of particles in the corresponding source reagent vapor, in which such particle generation or presence is suppressed by structural or processing features of the vapor generation system. Such apparatus and method are applicable to liquid and solid source reagents, particularly solid source reagents such as metal halides, e.g., hafnium chloride. The source reagent in one specific implementation is constituted by a porous monolithic bulk form of the source reagent material. The apparatus and method of the invention are usefully employed to provide source reagent vapor for applications such as atomic layer deposition (ALD) and ion implantation.Type: GrantFiled: October 25, 2016Date of Patent: January 19, 2021Assignee: ENTEGRIS, INC.Inventors: John M. Cleary, Jose I. Arno, Bryan C. Hendrix, Donn Naito, Scott Battle, John N. Gregg, Michael J. Wodjenski, Chongying Xu
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Silane guanidinate derivatives useful for low temperature deposition of silicon-containing materials
Patent number: 10280186Abstract: A guanidinate silane compound of any of formulae (I)-(IV) is described, having utility as a precursor in vapor deposition processes for forming a silicon-containing film on a substrate. The guanidinate silane compound can be used in vapor deposition processes such as chemical vapor deposition and atomic layer deposition, at temperatures below 400° C., to form silicon-containing films, e.g., silicon nitride films, useful as diffusion barrier layers, etch stop layers, and sidewall coating films, in integrated circuitry, flat-panel displays, solar panels, and other microelectronic and optoelectronic applications.Type: GrantFiled: December 1, 2017Date of Patent: May 7, 2019Assignees: JIANGSU NATA OPTO-ELECTRONIC MATERIAL CO., LTD, JIANGNAN UNIVERSITYInventors: Xiao Ma, Chongying Xu, Tzuhn-Yan Lin, Dongsheng Xu, Yuqiang Ding -
Patent number: 10043658Abstract: A full fill trench structure is described, including a microelectronic device substrate having a high aspect ratio trench therein and filled with silicon dioxide of a substantially void-free character and substantially uniform density throughout its bulk mass. A method of manufacturing a semiconductor product also is described, involving use of specific silicon precursor compositions for forming substantially void-free and substantially uniform density silicon dioxide material in the trench. The precursor fill composition may include silicon and germanium, to produce a microelectronic device structure including a GeO2/SiO2 trench fill material. A suppressor component may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material.Type: GrantFiled: January 4, 2018Date of Patent: August 7, 2018Assignee: Entegris, Inc.Inventors: William Hunks, Chongying Xu, Bryan C. Hendrix, Jeffrey F. Roeder, Steven M. Bilodeau, Weimin Li
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Publication number: 20180130654Abstract: A full fill trench structure is described, including a microelectronic device substrate having a high aspect ratio trench therein and filled with silicon dioxide of a substantially void-free character and substantially uniform density throughout its bulk mass. A method of manufacturing a semiconductor product also is described, involving use of specific silicon precursor compositions for forming substantially void-free and substantially uniform density silicon dioxide material in the trench. The precursor fill composition may include silicon and germanium, to produce a microelectronic device structure including a GeO2/SiO2 trench fill material. A suppressor component may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material.Type: ApplicationFiled: January 4, 2018Publication date: May 10, 2018Inventors: William Hunks, Chongying Xu, Bryan C. Hendrix, Jeffrey F. Roeder, Steven M. Bilodeau, Weimin Li
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Publication number: 20170327944Abstract: Provided is an aluminum precursor for thin-film deposition having a structure of formula (I) or (II), wherein R1, R2, R3, R4, R5, R6, and R7 each independently represent a hydrogen atom, C1˜C6 alkyl, halo-C1˜C6 alkyl, C2˜C5 alkenyl, halo-C2˜C5 alkenyl, C3˜C10 cycloalkyl, halo-C3˜C10 cycloalkyl, C6˜C10 aryl, halo-C6˜C10 aryl or —Si(R0)3, and wherein R0 is C1˜C6 alkyl or halo-C1˜C6 alkyl. According to the present invention, based on the interaction principle between molecules, aluminum precursors for thin-film deposition are provided, which have a good thermal stability, are not susceptible to decomposition and convenient for storage and transportation, have good volatility at a high temperature, and are excellent in film formation.Type: ApplicationFiled: September 17, 2015Publication date: November 16, 2017Inventors: Yuqiang DING, Chao ZHAO, Chongying XU, Shuyan YANG, Jinjuan XIANG, Hongyan MIAO, Dawei WANG
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Patent number: 9783558Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g., <550° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.Type: GrantFiled: July 14, 2015Date of Patent: October 10, 2017Assignee: Entegris, Inc.Inventors: Ziyun Wang, Chongying Xu, Bryan Hendrix, Jeffrey Roeder, Tianniu Chen, Thomas H. Baum
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Publication number: 20170037511Abstract: Apparatus and method for volatilizing a source reagent susceptible to particle generation or presence of particles in the corresponding source reagent vapor, in which such particle generation or presence is suppressed by structural or processing features of the vapor generation system. Such apparatus and method are applicable to liquid and solid source reagents, particularly solid source reagents such as metal halides, e.g., hafnium chloride. The source reagent in one specific implementation is constituted by a porous monolithic bulk form of the source reagent material. The apparatus and method of the invention are usefully employed to provide source reagent vapor for applications such as atomic layer deposition (ALD) and ion implantation.Type: ApplicationFiled: October 25, 2016Publication date: February 9, 2017Inventors: John M. Cleary, Jose I. Arno, Bryan C. Hendrix, Donn Naito, Scott Battle, John N. Gregg, Michael J. Wodjenski, Chongying Xu
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Patent number: 9534285Abstract: Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp)2, wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula wherein each of R1-R5 is the same as or different from one another, with each being independently selected from among hydrogen, C1-C12 alkyl, C1-C12 amino, C6-C10 aryl, C1-C12 alkoxy, C3-C6 alkylsilyl, C2-C12 alkenyl, R1R2R3NNR3, wherein R1, R2 and R3 may be the same as or different from one another and each is independently selected from hydrogen and C1-C6 alkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.Type: GrantFiled: June 11, 2014Date of Patent: January 3, 2017Assignee: ENTEGRIS, INC.Inventors: Chongying Xu, Tianniu Chen, Thomas M. Cameron, Jeffrey F. Roeder, Thomas H. Baum
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Patent number: 9537095Abstract: Precursors for use in depositing tellurium-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM), by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).Type: GrantFiled: July 16, 2014Date of Patent: January 3, 2017Assignee: Entegris, Inc.Inventors: Matthias Stender, Chongying Xu, Tianniu Chen, William Hunks, Philip S. H. Chen, Jeffrey F. Roeder, Thomas H. Baum
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Publication number: 20160343795Abstract: A method of forming a dielectric material, comprising doping a zirconium oxide material, using a dopant precursor selected from the group consisting of Ti(NMe2)4; Ti(NMeEt)4; Ti(NEt2)4; TiCl4; tBuN=Nb(NEt2)3; tBuN=Nb(NMe2)3; t-BuN=Nb(NEtMe)3; t-AmN=Nb(NEt2)3; t-AmN=Nb(NEtMe)3; t-AmN=Nb(NMe2)3; t-AmN=Nb(OBu-t)3; Nb-13; Nb(NEt2)4; Nb(NEt2)5; Nb(N(CH3)2)5; Nb(OC2H5)5; Nb(thd)(OPr-i)4; SiH(OMe)3; SiCl4; Si(NMe2)4; (Me3Si)2NH; GeRax(ORb)4-x wherein x is from 0 to 4, each Ra is independently selected from H or C1-C8 alkyl and each Rb is independently selected from C1-C8 alkyl; GeCl4; Ge(NRa2)4 wherein each Ra is independently selected from H and C1-C8 alkyl; and (Rb3Ge)2NH wherein each Rb is independently selected from C1-C8 alkyl; bis(N,N?-diisopropyl-1,3-propanediamide) titanium; and tetrakis(isopropylmethylamido) titanium; wherein Me is methyl, Et is ethyl, Pr-i is isopropyl, t-Bu is tertiary butyl, t-Am is tertiary amyl, and thd is 2,2,6,6-tetramethyl-3,5-heptanedionate.Type: ApplicationFiled: May 21, 2016Publication date: November 24, 2016Applicant: Entegris, Inc.Inventors: Julie Cissell, Chongying Xu, Thomas M. Cameron, William Hunks, David W. Peters
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Publication number: 20160225615Abstract: A full fill trench structure is described, including a microelectronic device substrate having a high aspect ratio trench therein and filled with silicon dioxide of a substantially void-free character and substantially uniform density throughout its bulk mass. A method of manufacturing a semiconductor product also is described, involving use of specific silicon precursor compositions for forming substantially void-free and substantially uniform density silicon dioxide material in the trench. The precursor fill composition may include silicon and germanium, to produce a microelectronic device structure including a GeO2/SiO2 trench fill material. A suppressor component may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material.Type: ApplicationFiled: April 8, 2016Publication date: August 4, 2016Applicant: Entegris, Inc.Inventors: William Hunks, Chongying Xu, Bryan C. Hendrix, Jeffrey F. Roeder, Steven M. Bilodeau, Weimin Li
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Patent number: 9373677Abstract: A method of forming a dielectric material, comprising doping a zirconium oxide material, using a dopant precursor selected from the group consisting of Ti(NMe2)4; Ti(NMeEt)4; Ti(NEt2)4;TiCl4; tBuN?Nb(NEt2)3; tBuN?Nb(NMe2)3; t-BuN?Nb(NEtMe)3; t-AmN?Nb(NEt2)3; t-AmN?Nb(NEtMe)3; t-AmN?Nb(NMe2)3; t-AmN?Nb(OBu-t)3; Nb-13; Nb(NEt2)4; Nb(NEt2)5; Nb(N(CH3)2)5; Nb(OC2H5)5; Nb(thd)(OPr-i)4; SiH(OMe)3; SiCU; Si(NMe2)4; (Me3Si)2NH; GeRax(ORb)4.x wherein x is from 0 to 4, each Ra is independently selected from H or C1-C8 alkyl and each Rb is independently selected from C1-C8 alkyl; GeCl4; Ge(NRa2)4 wherein each Ra is independently selected from H and C1-C8 alkyl; and (Rb3Ge)2NH wherein each Rb is independently selected from C1-C8 alkyl; bis(N,N?-diisopropyl-1,3-propanediamide) titanium; and tetrakis(isopropylmethylamido) titanium; wherein Me is methyl, Et is ethyl, Pr-i is isopropyl, t-Bu is tertiary butyl, t-Am is tertiary amyl, and thd is 2,2,6,6-tetramethyl-3,5-heptanedionate.Type: GrantFiled: June 23, 2011Date of Patent: June 21, 2016Assignee: ENTEGRIS, INC.Inventors: Julie Cissell, Chongying Xu, Thomas M. Cameron, William Hunks, David W. Peters
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Patent number: 9337054Abstract: A full fill trench structure is described, including a microelectronic device substrate having a high aspect ratio trench therein and filled with silicon dioxide of a substantially void-free character and substantially uniform density throughout its bulk mass. A method of manufacturing a semiconductor product also is described, involving use of specific silicon precursor compositions for forming substantially void-free and substantially uniform density silicon dioxide material in the trench. The precursor fill composition may include silicon and germanium, to produce a microelectronic device structure including a GeO2/SiO2 trench fill material. A suppressor component may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material.Type: GrantFiled: June 27, 2008Date of Patent: May 10, 2016Assignee: ENTEGRIS, INC.Inventors: William Hunks, Chongying Xu, Bryan C. Hendrix, Jeffrey F. Roeder, Steven M. Bilodeau, Weimin Li
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Patent number: 9269582Abstract: An ion implantation method, in which a dopant source composition is ionized to form dopant ions, and the dopant ions are implanted in a substrate. The dopant source composition includes cluster phosphorus or cluster arsenic compounds, for achieving P- and/or As-doping, in the production of doped articles of manufacture, e.g., silicon wafers or precursor structures for manufacturing microelectronic devices.Type: GrantFiled: March 22, 2012Date of Patent: February 23, 2016Assignee: ENTEGRIS, INC.Inventors: Oleg Byl, Chongying Xu, William Hunks, Richard S. Ray
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Patent number: 9219232Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.Type: GrantFiled: April 11, 2014Date of Patent: December 22, 2015Assignee: ENTEGRIS, INC.Inventors: William Hunks, Tianniu Chen, Chongying Xu, Jeffrey F. Roeder, Thomas H. Baum, Matthias Stender, Philip S. H. Chen, Gregory T. Stauf, Bryan C. Hendrix
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Publication number: 20150315215Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g., <550° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.Type: ApplicationFiled: July 14, 2015Publication date: November 5, 2015Applicant: Entegris, Inc.Inventors: Ziyun Wang, Chongying Xu, Bryan Hendrix, Jeffrey Roeder, Tianniu Chen, Thomas H. Baum
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Patent number: 9102693Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g., <550° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.Type: GrantFiled: July 17, 2014Date of Patent: August 11, 2015Assignee: ENTEGRIS, INC.Inventors: Ziyun Wang, Chongying Xu, Bryan Hendrix, Jeffrey Roeder, Tianniu Chen, Thomas H. Baum
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Patent number: 9034688Abstract: Precursors for use in depositing antimony-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM) or for the manufacturing of thermoelectric devices, by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).Type: GrantFiled: March 18, 2014Date of Patent: May 19, 2015Assignee: ENTEGRIS, INC.Inventors: Tianniu Chen, William Hunks, Philip S. H. Chen, Chongying Xu, Leah Maylott