Abstract: The invention refers to a light emitting device including a semiconductor chip having a main radiation surface, which emits UV light in operation, a phosphor, which is arranged in the radiation beam of the UV light, absorbs partially the UV light, wherein the phosphor converts the UV light into visible light so that the device emits mixed light comprising the UV light as well as visible light.

Abstract: In an embodiment, a method for producing optoelectronic semiconductor devices includes applying a temporal spacer to protect a light-exit face of an optoelectronic semiconductor chip by applying a photoresist onto a first carrier, subsequently developing the photoresist in places thereby forming the temporal spacer and subsequently mounting the optoelectronic semiconductor chip onto a side of the temporal spacer facing away from the first carrier, forming a reflector in a lateral direction directly around the optoelectronic semiconductor chip and around the temporal spacer, subsequently removing the temporal spacer so that the reflector extends beyond the light-exit face and applying an optical element onto the reflector so that a gap exists between the light-exit face and a light-entrance face of the optical element.

Abstract: An optoelectronic semiconductor device includes a substrate with a first main side and a second main side. A plurality of light-emitting semiconductor chips is distributed over the first main side and over the second main side. A molding compound encloses the light-emitting semiconductor chips in a lateral direction. The molding compound levels with the light-emitting semiconductor chips in a direction away from the substrate. The molding compound has a top side facing away from the substrate. A plurality of planar electrical interconnects run on the top side and electrically connects the light-emitting semiconductor chips on their radiation exit sides facing away from the substrate.

Abstract: A method of producing an optoelectronic element with a light emitting component, includes arranging a sacrificial layer at least above a part of a light emitting side of the component, forming at least in a part of an outer surface of the sacrificial layer an inverted optic structure, covering the outer surface of the sacrificial layer by a light transparent layer, transferring the inverted optic structure to an inner side of the transparent layer, and removing the sacrificial layer and forming a gap between the component and the light transparent layer, wherein the light transparent layer includes at the inner side the optic structure.

Abstract: A semiconductor device and a method for producing a carrier element suitable for a semiconductor device are disclosed. In an embodiment a semiconductor device includes a carrier element including a carrier layer having a first depression extending from a first main surface of the carrier layer in a direction of a second main surface of the carrier layer opposite the first main surface and a metal substrate and an electrically insulating layer on at least a portion of the metal substrate, a first electrically conductive filling component arranged in the first depression in a form-fitting manner, the electrically insulating layer being arranged between the metal substrate and the first filling component and a semiconductor chip arranged on the carrier element, wherein the electrically insulating layer is an anodization layer.

Abstract: A sensor element is disclosed.

Abstract: A component having a boundary element is disclosed. In an embodiment a component comprises a semiconductor chip, a housing and a reflective layer, wherein the housing has a shaped body and a base body, the shaped body laterally enclosing the base body at least in places and being different from the reflective layer. In a plan view, the base body has a free area which is uncovered by the shaped body. The free area or a bottom surface of a cavity comprises a mounting surface for the semiconductor chip, wherein the semiconductor chip is arranged on the mounting surface. The bottom surface or the free area is partially covered by the reflective layer, wherein the mounting surface is enclosed at least in regions by a boundary element which adjoins the reflective layer and is configured to prevent the semiconductor chip from being covered by the reflective layer.

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment a method includes attaching a plurality of optoelectronic semiconductor chips on predetermined locations of an intermediate film, providing a cavity film with a plurality of separated openings, attaching the cavity film to the intermediate film such that each optoelectronic semiconductor chip is associated with a respective opening, wherein the cavity film is thicker than the optoelectronic semiconductor chips such that the cavity film exceeds the optoelectronic semiconductor chips in a direction away from the intermediate film, filling a casting material in each of the openings such that the optoelectronic semiconductor chips are casted with the casting material and removing the intermediate film.

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment a method includes attaching a plurality of optoelectronic semiconductor chips on predetermined locations of an intermediate film, providing a cavity film with a plurality of separated openings, attaching the cavity film to the intermediate film such that each optoelectronic semiconductor chip is associated with a respective opening, wherein the cavity film is thicker than the optoelectronic semiconductor chips such that the cavity film exceeds the optoelectronic semiconductor chips in a direction away from the intermediate film, filling a casting material in each of the openings such that the optoelectronic semiconductor chips are casted with the casting material and removing the intermediate film.

Abstract: A method of producing an optoelectronic element with a light emitting component, includes arranging a sacrificial layer at least above a part of a light emitting side of the component, forming at least in a part of an outer surface of the sacrificial layer an inverted optic structure, covering the outer surface of the sacrificial layer by a light transparent layer, transferring the inverted optic structure to an inner side of the transparent layer, and removing the sacrificial layer and forming a gap between the component and the light transparent layer, wherein the light transparent layer includes at the inner side the optic structure.

Abstract: The invention refers to a light emitting device including a semiconductor chip having a main radiation surface, which emits UV light in operation, a phosphor, which is arranged in the radiation beam of the UV light, absorbs partially the UV light, wherein the phosphor converts the UV light into visible light so that the device emits mixed light comprising the UV light as well as visible light.

Abstract: A sensor element is disclosed.

Abstract: An electronic device includes a carrier and a semiconductor chip, wherein the carrier includes a first dielectric layer and a second dielectric layer, a thermal conductivity of the first dielectric layer exceeds a thermal conductivity of the second dielectric layer, the second dielectric layer is arranged on the first dielectric layer and partially covers the first dielectric layer, the semiconductor chip is arranged on the carrier in a mounting area in which the first dielectric layer is not covered by the second dielectric layer, and the carrier includes a solder terminal for electrical contacting arranged on the second dielectric layer.

Abstract: A component having a boundary element is disclosed. In an embodiment a component comprises a semiconductor chip, a housing and a reflective layer, wherein the housing has a shaped body and a base body, the shaped body laterally enclosing the base body at least in places and being different from the reflective layer. In a plan view, the base body has a free area which is uncovered by the shaped body. The free area or a bottom surface of a cavity comprises a mounting surface for the semiconductor chip, wherein the semiconductor chip is arranged on the mounting surface. The bottom surface or the free area is partially covered by the reflective layer, wherein the mounting surface is enclosed at least in regions by a boundary element which adjoins the reflective layer and is configured to prevent the semiconductor chip from being covered by the reflective layer.

Abstract: A light apparatus includes a first carrier with an optoelectronic component for generating electromagnetic radiation, a second carrier with at least one electronic component for controlling the optoelectronic component, and a thermally insulating layer arranged between, and attached to, the first and second carriers.

Abstract: An electronic device includes a carrier and a semiconductor chip, wherein the carrier includes a first dielectric layer and a second dielectric layer, a thermal conductivity of the first dielectric layer exceeds a thermal conductivity of the second dielectric layer, the second dielectric layer is arranged on the first dielectric layer and partially covers the first dielectric layer, the semiconductor chip is arranged on the carrier in a mounting area in which the first dielectric layer is not covered by the second dielectric layer, and the carrier includes a solder terminal for electrical contacting arranged on the second dielectric layer.

Abstract: A method of producing a multiplicity of surface-mountable carrier devices includes: A) providing a carrier plate having a first main face and a second main face located opposite the first main face, B) applying an electrically conductive layer to the first main face, C) applying a solder resist mask to a side of the electrically conductive layer remote from the carrier plate, wherein a multiplicity of adjoining regions are formed on the electrically conductive layer by the solder resist mask, D) applying a solder material to the solder resist mask and the electrically conductive layer, wherein the solder resist mask and the electrically conductive layer are at least partially covered by the solder material, and E) singulating the carrier plate and the electrically conductive layer along and through the solder resist mask and the solder material, wherein the solder material remains at least partially on the solder resist mask.

Abstract: A method of producing a multiplicity of surface-mountable carrier devices includes: A) providing a carrier plate having a first main face and a second main face located opposite the first main face, B) applying an electrically conductive layer to the first main face, C) applying a solder resist mask to a side of the electrically conductive layer remote from the carrier plate, wherein a multiplicity of adjoining regions are formed on the electrically conductive layer by the solder resist mask, D) applying a solder material to the solder resist mask and the electrically conductive layer, wherein the solder resist mask and the electrically conductive layer are at least partially covered by the solder material, and E) singulating the carrier plate and the electrically conductive layer along and through the solder resist mask and the solder material, wherein the solder material remains at least partially on the solder resist mask.

Abstract: A light apparatus is disclosed. Embodiments of the light apparatus includes a first carrier with at least one electronic component for controlling an optoelectronic component, a second carrier with the optoelectronic component for generating electromagnetic radiation and a thermally insulating layer arranged between the first and second carriers, wherein the first and second carriers are attached to the insulating layer.