Patents by Inventor Choon Gi Choi

Choon Gi Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11382244
    Abstract: Provided is a temperature-pressure complex sensor with an anti-radiation property including a first sensing material which is a porous conductive film, and second sensing materials which are dispersedly disposed on a surface of the first sensing material. The second sensing materials may include a conductive structure having a two-dimensional crystal structure, and nanoparticles having a radiation shielding property which are disposed between crystal layers of the conductive structure.
    Type: Grant
    Filed: September 10, 2019
    Date of Patent: July 5, 2022
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Seong Jun Kim, Choon Gi Choi, Tam Van Nguyen, Bok Ki Min, Shuvra Mondal, Yoonsik Yi
  • Publication number: 20210349045
    Abstract: Provided is a button device including a humidity sensor. The button device includes a substrate having a plurality of sensing regions, a housing on the substrate, the housing separating a first sensing region of the plurality of sensing regions from other sensing regions, a porous structure within the housing, the porous structure having through-holes, a first electrode on the porous structure, a second electrode on the porous structure, the second electrode being electrically connected to the first electrode through the porous structure, and a temperature sensor disposed adjacent to the first sensing region to sense a temperature of the first sensing region, The porous structure includes a body having an outer surface defining the through-holes, the body having an air gap therein.
    Type: Application
    Filed: May 6, 2021
    Publication date: November 11, 2021
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Choon Gi CHOI, Mondal SHUVRA, Bok Ki MIN, Yoonsik YI
  • Patent number: 11002619
    Abstract: Provided is a pressure-strain sensor including a graphene structure having a three-dimensional porous structure, planar sheets provided on a surface of the graphene structure, and a polymer layer configured to cover the graphene structure and the planar sheets, wherein each of the planar sheets contains a transition metal chalcogenide compound.
    Type: Grant
    Filed: April 19, 2019
    Date of Patent: May 11, 2021
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Seong Jun Kim, Choon-Gi Choi, Shuvra Mondal
  • Patent number: 10854445
    Abstract: Provided is an infrared optical sensor including a substrate, a channel layer on the substrate, optical absorption structures dispersed and disposed on the channel layer, and electrodes disposed on the substrate, and disposed on both sides of the channel layer, wherein the channel layer and the optical absorption structures include transition metal dichalcogenides.
    Type: Grant
    Filed: June 6, 2019
    Date of Patent: December 1, 2020
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Bok Ki Min, Choon Gi Choi
  • Publication number: 20200170149
    Abstract: Provided is a temperature-pressure complex sensor with an anti-radiation property including a first sensing material which is a porous conductive film, and second sensing materials which are dispersedly disposed on a surface of the first sensing material. The second sensing materials may include a conductive structure having a two-dimensional crystal structure, and nanoparticles having a radiation shielding property which are disposed between crystal layers of the conductive structure.
    Type: Application
    Filed: September 10, 2019
    Publication date: May 28, 2020
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Seong Jun KIM, Choon Gi CHOI, Tam Van Nguyen, Bok Ki MIN, Shuvra MONDAL, Yoonsik YI
  • Publication number: 20190378716
    Abstract: Provided is an infrared optical sensor including a substrate, a channel layer on the substrate, optical absorption structures dispersed and disposed on the channel layer, and electrodes disposed on the substrate, and disposed on both sides of the channel layer, wherein the channel layer and the optical absorption structures include transition metal dichalcogenides.
    Type: Application
    Filed: June 6, 2019
    Publication date: December 12, 2019
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Bok Ki MIN, Choon Gi CHOI
  • Publication number: 20190323905
    Abstract: Provided is a pressure-strain sensor including a graphene structure having a three-dimensional porous structure, planar sheets provided on a surface of the graphene structure, and a polymer layer configured to cover the graphene structure and the planar sheets, wherein each of the planar sheets contains a transition metal chalcogenide compound.
    Type: Application
    Filed: April 19, 2019
    Publication date: October 24, 2019
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Seong Jun KIM, Choon-Gi CHOI, Shuvra MONDAL
  • Publication number: 20190159336
    Abstract: Provided is a method for fabricating a strain-pressure complex sensor and a sensor fabricated thereby. This method includes coating a fabric with a graphene oxide; reducing the graphene oxide coated with the fabric to form a graphene; disposing carbon nanotubes on the fabric coated with the graphene; and connecting an electrode to the fabric.
    Type: Application
    Filed: November 13, 2018
    Publication date: May 23, 2019
    Inventors: Seong Jun KIM, Choon Gi CHOI
  • Patent number: 10138513
    Abstract: Provided is a gene amplifying and detecting device. The gene amplifying and detecting device includes: a gene amplifying chip including a chamber formed therein; a reaction solution filled in the chamber and including a fluorescent material; a light source located at one side of the gene amplifying chip; a light detector located at the other side of the gene amplifying chip; and a graphene heater formed on an inner surface or outer surface of the gene amplifying chip so as to heat the reaction solution.
    Type: Grant
    Filed: November 26, 2014
    Date of Patent: November 27, 2018
    Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Kwang Hyo Chung, Jin Tae Kim, Yo Han Choi, Choon Gi Choi, Hong Kyw Choi, Young Jun Yu, Doo Hyeb Youn, Jin Sik Choi
  • Patent number: 9614110
    Abstract: Disclosed is a photo detector. The photo detector includes: a conductive substrate; an insulating layer formed on the conductive substrate; a single-layer graphene formed at one part of an upper end of the insulating layer and formed in one layer; a multi-layer graphene formed at the other part of the upper end of the insulating layer and formed in multiple layers; a first electrode formed at an end of the single-layer graphene; and a second electrode formed at an end of the multi-layer graphene.
    Type: Grant
    Filed: March 16, 2016
    Date of Patent: April 4, 2017
    Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Jin Tae Kim, Choon Gi Choi, Young Jun Yu, Kwang Hyo Chung, Jin Sik Choi, Hong Kyw Choi
  • Patent number: 9586826
    Abstract: Disclosed are a method of growing a high-quality single layer graphene by using a Cu/Ni multi-layer metallic catalyst, and a graphene device using the same. The method controls and grows a high-quality single layer graphene by using the Cu/Ni multilayer metallic catalyst, in which a thickness of a nickel lower layer is fixed and a thickness of a copper upper layer is changed in a case where a graphene is grown by a CVD method. According to the method, it is possible to obtain a high-quality single layer graphene, and improve performance of a graphene application device by utilizing the high-quality single layer graphene and thus highly contribute to industrialization of the graphene application device.
    Type: Grant
    Filed: June 25, 2014
    Date of Patent: March 7, 2017
    Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Jin Sik Choi, Hong Kyw Choi, Ki Chul Kim, Young Jun Yu, Jin Soo Kim, Choon Gi Choi
  • Publication number: 20170045473
    Abstract: Provided herein is a gas sensor that includes a substrate, an insulating layer provided on the substrate, a first active layer disposed on the insulating layer, a second active layer which is disposed on the insulating layer and undergoes heterojunction with a portion of the first active layer, a first electrode and a second electrode which are disposed on the first active layer and are spaced apart from each other at a predetermined interval, and a third electrode and a fourth electrode which are disposed on the second active layer and are spaced apart from each other at a predetermined interval. The first active layer and the second active layer include different materials.
    Type: Application
    Filed: June 23, 2016
    Publication date: February 16, 2017
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Young-Jun YU, Hong Kyw CHOI, Choon Gi CHOI, Jin Tae KIM, Young Kyu CHOI, Jin Sik CHOI
  • Publication number: 20160365415
    Abstract: A graphene device is manufactured by forming on a substrate a pattern with a material that contains carbon, and growing graphene on the substrate where the pattern is formed.
    Type: Application
    Filed: June 7, 2016
    Publication date: December 15, 2016
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Se Rin PARK, Choon Gi CHOI
  • Publication number: 20160308077
    Abstract: Disclosed is a photo detector. The photo detector includes: a conductive substrate; an insulating layer formed on the conductive substrate; a single-layer graphene formed at one part of an upper end of the insulating layer and formed in one layer; a multi-layer graphene formed at the other part of the upper end of the insulating layer and formed in multiple layers; a first electrode formed at an end of the single-layer graphene; and a second electrode formed at an end of the multi-layer graphene.
    Type: Application
    Filed: March 16, 2016
    Publication date: October 20, 2016
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTIT UTE
    Inventors: Jin Tae KIM, Choon Gi CHOI, Young Jun YU, Kwang Hyo CHUNG, Jin Sik CHOI, Hong Kyw CHOI
  • Patent number: 9425335
    Abstract: Disclosed is an optical detector. The optical detector includes: a first dielectric layer; a graphene optical transmission line formed on the first dielectric layer; a graphene optical detector formed on the first dielectric layer and configured to detect light transmitted along the graphene optical transmission line; electric wires formed on the graphene optical detector; metal pads positioned at both ends of the graphene optical detector and connected with the electric wires; and a second dielectric layer formed on the graphene optical transmission line, in which the graphene optical detector detects an intensity of light incident in a horizontal direction with respect to a surface of the graphene optical transmission line.
    Type: Grant
    Filed: June 6, 2014
    Date of Patent: August 23, 2016
    Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Jin Tae Kim, Young Jun Yu, Hong Kyw Choi, Choon Gi Choi
  • Publication number: 20160099386
    Abstract: A light emitting diode includes: a substrate; an n-type semiconductor layer disposed on the substrate; an active layer disposed on the n-type semiconductor layer; a p-type semiconductor layer disposed on the active layer; a first electrode disposed on the p-type semiconductor layer and made of a metal oxide; a second electrode disposed on the first electrode and made of graphene; a p-type electrode disposed on the second electrode; and an n-type electrode disposed on the n-type semiconductor layer, wherein a work function of the first electrode is less than a work function of the p-type semiconductor layer, but is greater than a to work function of the second electrode.
    Type: Application
    Filed: December 15, 2015
    Publication date: April 7, 2016
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Doo Hyeb YOUN, Young-Jun Yu, Kwang Hyo Chung, Choon Gi Choi
  • Publication number: 20160091447
    Abstract: Provided herein is a gas sensor apparatus including a first sensor unit, second sensor unit, and signal processing unit. The first sensor unit has a channel area doped to an n-type such that it may selectively react to a donor molecule in gas. The second sensor unit has a channel area doped to a p-type such that it may selectively react to an acceptor molecule in gas. The signal processing unit receives a sense signal of the donor molecule from the first sensor unit and a sense signal of the acceptor molecule from the second sensor unit, processes the received sense signals and generates result data of processing the received sense signals. Therefore, the gas sensor apparatus may selectively sense donor gas and acceptor gas.
    Type: Application
    Filed: May 13, 2015
    Publication date: March 31, 2016
    Inventors: Young Jun YU, Jin Sik CHOI, Choon Gi CHOI, Hong Kyw CHOI, Jin Soo KIM, Jin Tae Kim, Kwang Hyo CHUNG, Jong Ho CHOE
  • Patent number: 9291836
    Abstract: Provided are an optical modulator modulating optical signals and an optical module including the same. The optical modulator includes a lower clad layer, an optical transmission line extended in a first direction on the lower clad layer, and an upper clad layer on the optical transmission line and the lower clad layer. The optical transmission line may include graphene.
    Type: Grant
    Filed: February 19, 2014
    Date of Patent: March 22, 2016
    Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Jin Tae Kim, Kwang Hyo Chung, Young-Jun Yu, Choon Gi Choi
  • Publication number: 20160060681
    Abstract: Provided is a gene amplifying and detecting device. The gene amplifying and detecting device includes: a gene amplifying chip including a chamber formed therein; a reaction solution filled in the chamber and including a fluorescent material; a light source located at one side of the gene amplifying chip; a light detector located at the other side of the gene amplifying chip; and a graphene heater formed on an inner surface or outer surface of the gene amplifying chip so as to heat the reaction solution.
    Type: Application
    Filed: November 26, 2014
    Publication date: March 3, 2016
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Kwang Hyo CHUNG, Jin Tae KIM, Yo Han CHOI, Choon Gi CHOI, Hong Kyw CHOI, Young Jun YU, Doo Hyeb YOUN, Jin Sik CHOI
  • Patent number: 9275860
    Abstract: A method of manufacturing a junction electronic device having a 2-Dimensional (2D) material as a channel, includes forming a pattern portion by surface-treating a substrate so that the patterned portion has a higher surface potential than other portions of the substrate; bonding a 2D material to rthe patterned portion having the higher surface potential by spraying a liquid including 2D material flakes onto the substrate; forming a pair of first electrodes in contact with both ends of the 2D material disposed on the substrate; forming a dielectric layer on the first electrodes and the 2D material; and forming a second electrode on the dielectric layer. The 2D materials are disposed at desired positions by chemical exfoliation.
    Type: Grant
    Filed: April 22, 2014
    Date of Patent: March 1, 2016
    Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Young Jun Yu, Jin Soo Kim, Hong Kyw Choi, Jin Sik Choi, Jin Tae Kim, Kwang Hyo Chung, Doo Hyeb Youn, Choon Gi Choi