Patents by Inventor Choon Gi Choi
Choon Gi Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11828718Abstract: Provided is a button device including a humidity sensor. The button device includes a substrate having a plurality of sensing regions, a housing on the substrate, the housing separating a first sensing region of the plurality of sensing regions from other sensing regions, a porous structure within the housing, the porous structure having through-holes, a first electrode on the porous structure, a second electrode on the porous structure, the second electrode being electrically connected to the first electrode through the porous structure, and a temperature sensor disposed adjacent to the first sensing region to sense a temperature of the first sensing region, The porous structure includes a body having an outer surface defining the through-holes, the body having an air gap therein.Type: GrantFiled: May 6, 2021Date of Patent: November 28, 2023Assignee: Electronics and Telecommunications Research InstituteInventors: Choon Gi Choi, Mondal Shuvra, Bok Ki Min, Yoonsik Yi
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Patent number: 11382244Abstract: Provided is a temperature-pressure complex sensor with an anti-radiation property including a first sensing material which is a porous conductive film, and second sensing materials which are dispersedly disposed on a surface of the first sensing material. The second sensing materials may include a conductive structure having a two-dimensional crystal structure, and nanoparticles having a radiation shielding property which are disposed between crystal layers of the conductive structure.Type: GrantFiled: September 10, 2019Date of Patent: July 5, 2022Assignee: Electronics and Telecommunications Research InstituteInventors: Seong Jun Kim, Choon Gi Choi, Tam Van Nguyen, Bok Ki Min, Shuvra Mondal, Yoonsik Yi
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Publication number: 20210349045Abstract: Provided is a button device including a humidity sensor. The button device includes a substrate having a plurality of sensing regions, a housing on the substrate, the housing separating a first sensing region of the plurality of sensing regions from other sensing regions, a porous structure within the housing, the porous structure having through-holes, a first electrode on the porous structure, a second electrode on the porous structure, the second electrode being electrically connected to the first electrode through the porous structure, and a temperature sensor disposed adjacent to the first sensing region to sense a temperature of the first sensing region, The porous structure includes a body having an outer surface defining the through-holes, the body having an air gap therein.Type: ApplicationFiled: May 6, 2021Publication date: November 11, 2021Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Choon Gi CHOI, Mondal SHUVRA, Bok Ki MIN, Yoonsik YI
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Patent number: 11002619Abstract: Provided is a pressure-strain sensor including a graphene structure having a three-dimensional porous structure, planar sheets provided on a surface of the graphene structure, and a polymer layer configured to cover the graphene structure and the planar sheets, wherein each of the planar sheets contains a transition metal chalcogenide compound.Type: GrantFiled: April 19, 2019Date of Patent: May 11, 2021Assignee: Electronics and Telecommunications Research InstituteInventors: Seong Jun Kim, Choon-Gi Choi, Shuvra Mondal
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Patent number: 10854445Abstract: Provided is an infrared optical sensor including a substrate, a channel layer on the substrate, optical absorption structures dispersed and disposed on the channel layer, and electrodes disposed on the substrate, and disposed on both sides of the channel layer, wherein the channel layer and the optical absorption structures include transition metal dichalcogenides.Type: GrantFiled: June 6, 2019Date of Patent: December 1, 2020Assignee: Electronics and Telecommunications Research InstituteInventors: Bok Ki Min, Choon Gi Choi
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Publication number: 20200170149Abstract: Provided is a temperature-pressure complex sensor with an anti-radiation property including a first sensing material which is a porous conductive film, and second sensing materials which are dispersedly disposed on a surface of the first sensing material. The second sensing materials may include a conductive structure having a two-dimensional crystal structure, and nanoparticles having a radiation shielding property which are disposed between crystal layers of the conductive structure.Type: ApplicationFiled: September 10, 2019Publication date: May 28, 2020Applicant: Electronics and Telecommunications Research InstituteInventors: Seong Jun KIM, Choon Gi CHOI, Tam Van Nguyen, Bok Ki MIN, Shuvra MONDAL, Yoonsik YI
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Publication number: 20190378716Abstract: Provided is an infrared optical sensor including a substrate, a channel layer on the substrate, optical absorption structures dispersed and disposed on the channel layer, and electrodes disposed on the substrate, and disposed on both sides of the channel layer, wherein the channel layer and the optical absorption structures include transition metal dichalcogenides.Type: ApplicationFiled: June 6, 2019Publication date: December 12, 2019Applicant: Electronics and Telecommunications Research InstituteInventors: Bok Ki MIN, Choon Gi CHOI
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Publication number: 20190323905Abstract: Provided is a pressure-strain sensor including a graphene structure having a three-dimensional porous structure, planar sheets provided on a surface of the graphene structure, and a polymer layer configured to cover the graphene structure and the planar sheets, wherein each of the planar sheets contains a transition metal chalcogenide compound.Type: ApplicationFiled: April 19, 2019Publication date: October 24, 2019Applicant: Electronics and Telecommunications Research InstituteInventors: Seong Jun KIM, Choon-Gi CHOI, Shuvra MONDAL
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Publication number: 20190159336Abstract: Provided is a method for fabricating a strain-pressure complex sensor and a sensor fabricated thereby. This method includes coating a fabric with a graphene oxide; reducing the graphene oxide coated with the fabric to form a graphene; disposing carbon nanotubes on the fabric coated with the graphene; and connecting an electrode to the fabric.Type: ApplicationFiled: November 13, 2018Publication date: May 23, 2019Inventors: Seong Jun KIM, Choon Gi CHOI
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Patent number: 10138513Abstract: Provided is a gene amplifying and detecting device. The gene amplifying and detecting device includes: a gene amplifying chip including a chamber formed therein; a reaction solution filled in the chamber and including a fluorescent material; a light source located at one side of the gene amplifying chip; a light detector located at the other side of the gene amplifying chip; and a graphene heater formed on an inner surface or outer surface of the gene amplifying chip so as to heat the reaction solution.Type: GrantFiled: November 26, 2014Date of Patent: November 27, 2018Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Kwang Hyo Chung, Jin Tae Kim, Yo Han Choi, Choon Gi Choi, Hong Kyw Choi, Young Jun Yu, Doo Hyeb Youn, Jin Sik Choi
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Patent number: 9614110Abstract: Disclosed is a photo detector. The photo detector includes: a conductive substrate; an insulating layer formed on the conductive substrate; a single-layer graphene formed at one part of an upper end of the insulating layer and formed in one layer; a multi-layer graphene formed at the other part of the upper end of the insulating layer and formed in multiple layers; a first electrode formed at an end of the single-layer graphene; and a second electrode formed at an end of the multi-layer graphene.Type: GrantFiled: March 16, 2016Date of Patent: April 4, 2017Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Jin Tae Kim, Choon Gi Choi, Young Jun Yu, Kwang Hyo Chung, Jin Sik Choi, Hong Kyw Choi
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Patent number: 9586826Abstract: Disclosed are a method of growing a high-quality single layer graphene by using a Cu/Ni multi-layer metallic catalyst, and a graphene device using the same. The method controls and grows a high-quality single layer graphene by using the Cu/Ni multilayer metallic catalyst, in which a thickness of a nickel lower layer is fixed and a thickness of a copper upper layer is changed in a case where a graphene is grown by a CVD method. According to the method, it is possible to obtain a high-quality single layer graphene, and improve performance of a graphene application device by utilizing the high-quality single layer graphene and thus highly contribute to industrialization of the graphene application device.Type: GrantFiled: June 25, 2014Date of Patent: March 7, 2017Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Jin Sik Choi, Hong Kyw Choi, Ki Chul Kim, Young Jun Yu, Jin Soo Kim, Choon Gi Choi
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Publication number: 20170045473Abstract: Provided herein is a gas sensor that includes a substrate, an insulating layer provided on the substrate, a first active layer disposed on the insulating layer, a second active layer which is disposed on the insulating layer and undergoes heterojunction with a portion of the first active layer, a first electrode and a second electrode which are disposed on the first active layer and are spaced apart from each other at a predetermined interval, and a third electrode and a fourth electrode which are disposed on the second active layer and are spaced apart from each other at a predetermined interval. The first active layer and the second active layer include different materials.Type: ApplicationFiled: June 23, 2016Publication date: February 16, 2017Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Young-Jun YU, Hong Kyw CHOI, Choon Gi CHOI, Jin Tae KIM, Young Kyu CHOI, Jin Sik CHOI
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Publication number: 20160365415Abstract: A graphene device is manufactured by forming on a substrate a pattern with a material that contains carbon, and growing graphene on the substrate where the pattern is formed.Type: ApplicationFiled: June 7, 2016Publication date: December 15, 2016Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Se Rin PARK, Choon Gi CHOI
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Publication number: 20160308077Abstract: Disclosed is a photo detector. The photo detector includes: a conductive substrate; an insulating layer formed on the conductive substrate; a single-layer graphene formed at one part of an upper end of the insulating layer and formed in one layer; a multi-layer graphene formed at the other part of the upper end of the insulating layer and formed in multiple layers; a first electrode formed at an end of the single-layer graphene; and a second electrode formed at an end of the multi-layer graphene.Type: ApplicationFiled: March 16, 2016Publication date: October 20, 2016Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTIT UTEInventors: Jin Tae KIM, Choon Gi CHOI, Young Jun YU, Kwang Hyo CHUNG, Jin Sik CHOI, Hong Kyw CHOI
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Patent number: 9425335Abstract: Disclosed is an optical detector. The optical detector includes: a first dielectric layer; a graphene optical transmission line formed on the first dielectric layer; a graphene optical detector formed on the first dielectric layer and configured to detect light transmitted along the graphene optical transmission line; electric wires formed on the graphene optical detector; metal pads positioned at both ends of the graphene optical detector and connected with the electric wires; and a second dielectric layer formed on the graphene optical transmission line, in which the graphene optical detector detects an intensity of light incident in a horizontal direction with respect to a surface of the graphene optical transmission line.Type: GrantFiled: June 6, 2014Date of Patent: August 23, 2016Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Jin Tae Kim, Young Jun Yu, Hong Kyw Choi, Choon Gi Choi
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Publication number: 20160099386Abstract: A light emitting diode includes: a substrate; an n-type semiconductor layer disposed on the substrate; an active layer disposed on the n-type semiconductor layer; a p-type semiconductor layer disposed on the active layer; a first electrode disposed on the p-type semiconductor layer and made of a metal oxide; a second electrode disposed on the first electrode and made of graphene; a p-type electrode disposed on the second electrode; and an n-type electrode disposed on the n-type semiconductor layer, wherein a work function of the first electrode is less than a work function of the p-type semiconductor layer, but is greater than a to work function of the second electrode.Type: ApplicationFiled: December 15, 2015Publication date: April 7, 2016Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Doo Hyeb YOUN, Young-Jun Yu, Kwang Hyo Chung, Choon Gi Choi
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Publication number: 20160091447Abstract: Provided herein is a gas sensor apparatus including a first sensor unit, second sensor unit, and signal processing unit. The first sensor unit has a channel area doped to an n-type such that it may selectively react to a donor molecule in gas. The second sensor unit has a channel area doped to a p-type such that it may selectively react to an acceptor molecule in gas. The signal processing unit receives a sense signal of the donor molecule from the first sensor unit and a sense signal of the acceptor molecule from the second sensor unit, processes the received sense signals and generates result data of processing the received sense signals. Therefore, the gas sensor apparatus may selectively sense donor gas and acceptor gas.Type: ApplicationFiled: May 13, 2015Publication date: March 31, 2016Inventors: Young Jun YU, Jin Sik CHOI, Choon Gi CHOI, Hong Kyw CHOI, Jin Soo KIM, Jin Tae Kim, Kwang Hyo CHUNG, Jong Ho CHOE
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Patent number: 9291836Abstract: Provided are an optical modulator modulating optical signals and an optical module including the same. The optical modulator includes a lower clad layer, an optical transmission line extended in a first direction on the lower clad layer, and an upper clad layer on the optical transmission line and the lower clad layer. The optical transmission line may include graphene.Type: GrantFiled: February 19, 2014Date of Patent: March 22, 2016Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Jin Tae Kim, Kwang Hyo Chung, Young-Jun Yu, Choon Gi Choi
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Publication number: 20160060681Abstract: Provided is a gene amplifying and detecting device. The gene amplifying and detecting device includes: a gene amplifying chip including a chamber formed therein; a reaction solution filled in the chamber and including a fluorescent material; a light source located at one side of the gene amplifying chip; a light detector located at the other side of the gene amplifying chip; and a graphene heater formed on an inner surface or outer surface of the gene amplifying chip so as to heat the reaction solution.Type: ApplicationFiled: November 26, 2014Publication date: March 3, 2016Applicant: Electronics and Telecommunications Research InstituteInventors: Kwang Hyo CHUNG, Jin Tae KIM, Yo Han CHOI, Choon Gi CHOI, Hong Kyw CHOI, Young Jun YU, Doo Hyeb YOUN, Jin Sik CHOI