Patents by Inventor Choon Kon Kim

Choon Kon Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Gallium nitride/sapphire thin film having reduced bending deformation
    Patent number: 7518151
    Abstract: The present invention relates to a gallium nitride/sapphire thin film, wherein a curvature radius thereof is positioned on the right side of a curve plotted from the following functional formula (I): Y=Y0+A·e?(x1?1)/T1+B·(1?e?x2/T2)??(I) wherein Y is the curvature radius (m) of a gallium nitride/sapphire thin film, x1 is the thickness (?m) of a gallium nitride layer, x2 is the thickness (mm) of a sapphire substrate, Y0 is ?107±2.5, A is 24.13±0.50, B is 141±4.5, T1 is 0.56±0.04, and T2 is 0.265±0.5.
    Type: Grant
    Filed: October 9, 2007
    Date of Patent: April 14, 2009
    Assignee: Samsung Corning Co., Ltd.
    Inventors: Chang Ho Lee, Hae Yong Lee, Choon Kon Kim, Kisoo Lee
  • GALLIUM NITRIDE/SAPPHIRE THIN FILM HAVING REDUCED BENDING DEFORMATION
    Publication number: 20080248259
    Abstract: The present invention relates to a gallium nitride/sapphire thin film, wherein a curvature radius thereof is positioned on the right side of a curve plotted from the following functional formula (I): Y=Y0+A·e?(x1?1)/T1+B·(1?e?x2/T2) ??(I) wherein Y is the curvature radius (m) of a gallium nitride/sapphire thin film, x1 is the thickness (?m) of a gallium nitride layer, x2 is the thickness (mm) of a sapphire substrate, Y0 is ?107±2.5, A is 24.13±0.50, B is 141±4.5, T1 is 0.56±0.04, and T2 is 0.265±0.5.
    Type: Application
    Filed: October 9, 2007
    Publication date: October 9, 2008
    Applicant: SAMSUNG CORNING CO., LTD.
    Inventors: Chang Ho Lee, Hae Yong Lee, Choon Kon Kim, Kisoo Lee
  • Sapphire/gallium nitride laminate having reduced bending deformation
    Patent number: 7315045
    Abstract: The present invention relates to a sapphire/gallium nitride laminate, wherein a curvature radius thereof is positioned on the right side of a first curve plotted from the following functional formula (I): Y=Y0+A·e?(x?1)/T??(I) wherein Y is the curvature radius (m) of a sapphire/gallium nitride laminate, X is the thickness (?m) of a gallium nitride film, Y0 is 5.47±0.34, A is 24.13±0.50, and T is 0.56±0.04. The inventive laminate can be advantageously used in the manufacture of a high quality electronic device.
    Type: Grant
    Filed: January 28, 2005
    Date of Patent: January 1, 2008
    Assignee: Samsung Corning Co., Ltd.
    Inventors: Chang Ho Lee, Hae Yong Lee, Choon Kon Kim
  • Nitride semiconductor template for light emitting diode and preparation thereof
    Publication number: 20050133798
    Abstract: A nitride semiconductor template having nano-voids at an interface between a substrate having one embossed surface and a nitride semiconductor layer can be rapidly prepared by hydride vapor phase epitaxy (HVPE) growth of the nitride semiconductor layer on the embossed surface of the substrate.
    Type: Application
    Filed: December 20, 2004
    Publication date: June 23, 2005
    Inventors: Hyun-Min Jung, Hae-Yong Lee, Hyun-Min Shin, Choon-Kon Kim, Chang-Ho Lee, Jeong-Wook Lee, Cheol-Soo Sone, Jae-Hee Cho