Patents by Inventor Choon Ryu

Choon Ryu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming a LP-CVD oxide film without oxidizing an underlying metal film
    Publication number: 20060240678
    Abstract: A method of manufacturing a semiconductor device includes forming a LP-CVD oxide film on sides of a gate including a metal film by means of a LP-CVD method that does not cause oxidization of the metal film. Oxidization of a metal film can be prevented physically, and degradation of the electrical device characteristics can be prevented.
    Type: Application
    Filed: June 17, 2005
    Publication date: October 26, 2006
    Applicant: HYNIX SEMICONDUCTOR INC.
    Inventors: Min Jang, Dong Lee, Eun-Shil Park, Kwang Jeon, Seung Shin, Choon Ryu
  • Method for forming isolation film in semiconductor device
    Publication number: 20060094201
    Abstract: A method for forming an isolation film of a semiconductor device is disclosed which includes forming trenches in a semiconductor substrate, forming a first HDP oxide film in the formed trenches, performing an etch-back process using a mixing gas of C2F6 gas and O2 gas to form vertical walls in the first HDP oxide films and forming a second HDP oxide film on the resulting structure. The characteristics of a device can be improved because diffusion of F ions in a FSG film formed on the first HDP oxide film is minimized.
    Type: Application
    Filed: December 22, 2004
    Publication date: May 4, 2006
    Applicant: HYNIX SEMICONDUCTOR INC.
    Inventor: Choon Ryu
  • Method for forming isolation layer in semiconductor device
    Publication number: 20050227495
    Abstract: The present invention relates to a method for forming an insulating layer in a semiconductor device. After a first oxide film is formed in a trench, an impurity remaining on the first oxide film in the process of etching the first oxide film using a gas containing fluorine is stripped using oxygen plasma or hydrogen plasma. Thus, it can prevent degradation of device properties due to diffusion of the impurity without additional equipment. Therefore, it can help improve reliability of a next-generation device.
    Type: Application
    Filed: June 29, 2004
    Publication date: October 13, 2005
    Applicant: HYNIX SEMICONDUCTOR INC.
    Inventor: Choon Ryu