Abstract: Provided is a batch type substrate processing apparatus that generates plasma by a plurality of electrodes to perform a processing process on a substrate. The batch type substrate processing apparatus includes a reaction tube, a plurality of electrodes disposed to be spaced apart from each other, and an electrode protection part configured to protect the plurality of electrodes. The plurality of electrodes includes first and second power supply electrodes spaced apart from each other, and a ground electrode provided between the first power supply electrode and the second power supply electrode. The electrode protection part includes a plurality of first electrode protection tubes provided in the first and second power supply electrodes, respectively, a second electrode protection tube provided in the ground electrode, and a plurality of connection tubes configured to connect each of the plurality of first electrode protection tubes to the second electrode protection tube so as to communicate with each other.

Abstract: Provided is a method of depositing an insulation layer on a trench in a substrate, in which the trench having an aspect ratio of 5:1 or more is formed, including: an insulation layer deposition step of performing an adsorption step of adsorbing silicon to the substrate by injecting a silicon precursor into the inside of a chamber into which the substrate is loaded, a first purge step of removing the unreacted silicon precursor and reaction byproducts from the inside of the chamber, a reaction step of forming the adsorbed silicon as an insulation layer including silicon by supplying a first reaction source to the inside of the chamber, and a second purge step of removing the unreacted first reaction source and reaction byproducts from the inside of the chamber; and a densification step of forming a plasma atmosphere in the inside of the chamber by applying an radio frequency (RF) power and densifying the insulation layer including silicon by using the plasma atmosphere, wherein a frequency of the RF power is i

Abstract: Provided is a method of depositing an insulation layer on a trench in a substrate, in which the trench having an aspect ratio of 5:1 or more is formed, including: an insulation layer deposition step of performing an adsorption step of adsorbing silicon to the substrate by injecting a silicon precursor into the inside of a chamber into which the substrate is loaded, a first purge step of removing the unreacted silicon precursor and reaction byproducts from the inside of the chamber, a reaction step of forming the adsorbed silicon as an insulation layer including silicon by supplying a first reaction source to the inside of the chamber, and a second purge step of removing the unreacted first reaction source and reaction byproducts from the inside of the chamber; and a densification step of forming a plasma atmosphere in the inside of the chamber by applying an radio frequency (RF) power and densifying the insulation layer including silicon by using the plasma atmosphere, wherein a frequency of the RF power is i