Abstract: Provided are an active matrix driving display device and a method of manufacturing the same. The active matrix driving display device includes: a first buffer layer formed on a plastic substrate; a laser-absorbing layer formed on the first buffer layer; a second buffer layer formed on the laser-absorbing layer; and an active layer formed on the second buffer layer, whereby it is possible to prevent deformation of the plastic substrate even when light or heat is used during the formation of the active layer.

Abstract: Provided are a low temperature active matrix display device using a plastic substrate and method of fabricating the same. The low temperature active matrix display device includes: a plastic substrate; a reflection layer disposed on the plastic substrate; a buffer layer disposed on the reflection layer; a thin film transistor disposed on the buffer layer in a first region of the plastic substrate; an interlayer dielectric layer disposed on the thin film transistor; a capacitor disposed in a trench formed in a second region of the plastic substrate and having a first electrode connected to a source electrode and a drain electrode of the thin film transistor, the trench extending from the interlayer dielectric layer to the reflection layer; and a display device having one electrode connected to a second electrode of the capacitor.

Abstract: Provided is a method for planarizing a polysilicon surface grown by means of a sequential lateral solidification method, which comprises the steps of: crystallizing an amorphous silicon having a predetermined thickness formed on a substrate into the polysilicon layer by means of the sequential lateral solidification method; and planarizing the polysilicon layer by means of a laser having an energy density for converting partially melted polysilicon into fully melted polysilicon, so that electrical characteristics of element may be improved when the polysilicon thin film transistor is fabricated using the planarization process.