Patents by Inventor Choong H. Lee

Choong H. Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating gate electrode of CMOS device
    Patent number: 5567642
    Abstract: A method of fabricating a gate electrode of a CMOS device is disclosed including the steps of: sequentially forming a gate insulating layer, first conductive layer and protective layer on a semiconductor substrate; selectively etching a predetermined portion of the protective layer in which a PMOS transistor will be formed; forming a second conductive layer on the overall surface of said substrate; removing the second conductive layer formed on the protective layer, and partially etching the protective layer to a predetermined thickness; and patterning the second conductive layer, the protective layer, the first conductive layer and the gate insulating layer using a gate electrode pattern.
    Type: Grant
    Filed: November 6, 1995
    Date of Patent: October 22, 1996
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventors: Hyeon S. Kim, Choong H. Lee