Abstract: A method of fabricating a phase shift photomask (PSM) includes providing a blank phase shift photomask including a phase shift layer, a light blocking layer, and a resist layer, patterning the resist layer of the PSM, removing a portion of the light blocking layer, removing the resist layer, and removing the portion of the phase shift layer using an etch process. The etch process is performed using a pulse power supply technique for which on and off operations of an alternating current (AC) power are alternately and repeatedly executed.

Abstract: A blank phase shift photomask includes a transparent substrate, a phase shift layer disposed on the transparent substrate, a light blocking layer disposed on the phase shift layer, and a resist layer disposed on the light blocking layer. The phase shift layer has a light transmittance of between approximately 60% to approximately 90% and provides a phase difference of between approximately 180 degrees to approximately 250 degrees.

Abstract: A method of fabricating a reflective photomask is provided. The method includes sequentially forming a multi-layered reflective layer, an absorption layer and an anti-reflective coating (ARC) layer on a substrate. ARC patterns are formed to expose a portion of the absorption layer by directly irradiating an ion beam onto a portion of the ARC layer to etch the portion of the ARC layer. The exposed portion of the absorption layer is etched using the ARC patterns as etch masks to form absorption patterns exposing a portion of the multi-layered reflective layer.

Abstract: A method of fabricating a reflective photomask is provided. The method includes sequentially forming a multi-layered reflective layer, an absorption layer and an anti-reflective coating (ARC) layer on a substrate. ARC patterns are formed to expose a portion of the absorption layer by directly irradiating an ion beam onto a portion of the ARC layer to etch the portion of the ARC layer. The exposed portion of the absorption layer is etched using the ARC patterns as etch masks to form absorption patterns exposing a portion of the multi-layered reflective layer.

Abstract: Reflection-type photomasks are provided. The reflection-type photomask includes a substrate and a reflection layer on a front surface of the substrate. The substrate includes a pattern transfer region, a light blocking region and a border region. A trench penetrates the reflection layer in the border region to expose the substrate. First absorption layer patterns are disposed on the reflection layer in the pattern transfer region, and a second absorption layer pattern is disposed on the reflection layer in the light blocking region. Sidewalls of the trench have a sloped profile. Related methods are also provided.

Abstract: A method for correcting the critical dimension (CD) of a phase shift mask includes calculating an intensity slope quantifying a slope of an intensity waveform of secondary electrons emitted by scanning an electron beam spot to a hard mask pattern on a phase shift mask on a substrate, extracting a delta critical dimension (CD) value, which is equal to a CD difference between the phase shift pattern and the hard mask pattern, as a delta CD value corresponding to the intensity slope, and correcting the CD of the phase shift mask by using the extracted delta CD value.

Abstract: A method for correcting the critical dimension (CD) of a phase shift mask includes calculating an intensity slope quantifying a slope of an intensity waveform of secondary electrons emitted by scanning an electron beam spot to a hard mask pattern on a phase shift mask on a substrate, extracting a delta critical dimension (CD) value, which is equal to a CD difference between the phase shift pattern and the hard mask pattern, as a delta CD value corresponding to the intensity slope, and correcting the CD of the phase shift mask by using the extracted delta CD value.