Patents by Inventor Choong-Hyun Lee

Choong-Hyun Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11206655
    Abstract: A method for receiving a PDCCH by a terminal in a mobile communication system may comprise the steps of: receiving a first PDCCH including first DCI from a base station through a first PDCCH search space; and receiving a second PDCCH including second DCI from the base station through a second PDCCH search space, wherein the first DCI and second DCI are for scheduling the same PDSCH for the same TB or TBs associated with the same HARQ process, are for scheduling different PDSCHs for the same TB or TBs associated with the same HARQ process, or are for scheduling different PDSCHs for different TBs or TBs associated with different HARQ processes. In addition, the first DCI and second DCI may be received from the base station within a time window.
    Type: Grant
    Filed: August 8, 2018
    Date of Patent: December 21, 2021
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Sung Hyun Moon, Cheul Soon Kim, Jung Hoon Lee, Min Hyun Kim, Ji Hung Kim, Ju Ho Park, Choong Il Yeh, Jun Hwan Lee
  • Publication number: 20210013029
    Abstract: Provided is a substrate treatment apparatus including a treatment container equipped with a conductive member. The conductive member is made of a material having a lower resistivity than that of the treatment container. The conductive member prevents a rise of an electric potential of the treatment container, which is caused by charging during treatment of a substrate, thereby preventing the substrate from being contaminated and damaged by particles and electrostatic arcing.
    Type: Application
    Filed: July 2, 2020
    Publication date: January 14, 2021
    Applicant: SEMES CO., LTD.
    Inventors: Do Yeon KIM, Se Hoon OH, Won Geun KIM, Ju Mi LEE, Ho Jong HWANG, Pil Kyun HEO, Hyun YOON, Choong Hyun LEE, Hyun Goo PARK
  • Patent number: 10109710
    Abstract: A semiconductor device having a channel region that is formed in a germanium layer and has a first conductive type, and a source region and a drain region that are formed in the germanium layer and have a second conductive type different from the first conductive type, wherein an oxygen concentration in the channel region is less than an oxygen concentration in a junction interface between at least one of the source region and the drain region and a region that surrounds the at least one of the source region and the drain region and has the first conductive type.
    Type: Grant
    Filed: November 2, 2015
    Date of Patent: October 23, 2018
    Assignee: Japan Science and Technology Agency
    Inventors: Akira Toriumi, Choong-hyun Lee, Tomonori Nishimura
  • Publication number: 20180016194
    Abstract: Disclosed is a method for producing a carbide derived carbon layer with a dimple pattern. The method includes forming a dimple pattern on the surface of a carbide ceramic material and forming a carbide derived carbon layer thereon. Also disclosed is a carbide derived carbon layer with a dimple pattern produced by the method. The carbide derived carbon layer with dimple pattern has high wear resistance, good adhesion to a machine part, and excellent frictional characteristics. The carbide derived carbon layer can be applied to various fields, such as coating of carbide coated and carbide materials. Particularly, the carbide derived carbon layer is suitable for coating of machine parts (e.g., sliding parts, mechanical seals, piston rings, and compressor vanes) where excellent mechanical properties are needed.
    Type: Application
    Filed: June 29, 2017
    Publication date: January 18, 2018
    Applicant: Korea University Research and Business Foundation
    Inventors: Dae-Soon Lim, Eung-Seok Lee, Tae Hyun Kim, Choong Hyun Lee, Young Kyun Lim
  • Publication number: 20170317170
    Abstract: A semiconductor device having a channel region that is formed in a germanium layer and has a first conductive type, and a source region and a drain region that are formed in the germanium layer and have a second conductive type different from the first conductive type, wherein an oxygen concentration in the channel region is less than an oxygen concentration in a junction interface between at least one of the source region and the drain region and a region that surrounds the at least one of the source region and the drain region and has the first conductive type.
    Type: Application
    Filed: November 2, 2015
    Publication date: November 2, 2017
    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Akira TORIUMI, Choong-hyun LEE, Tomonori NISHIMURA
  • Patent number: 9722026
    Abstract: A semiconductor structure includes: a germanium layer; and a first insulating film that is formed on an upper surface of the germanium layer, primarily contains germanium oxide and a substance having an oxygen potential lower than an oxygen potential of germanium oxide, and has a physical film thickness of 3 nm or less; wherein a half width of frequency to height in a 1 ?m square area of the upper surface of the germanium layer is 0.7 nm or less.
    Type: Grant
    Filed: June 6, 2014
    Date of Patent: August 1, 2017
    Assignee: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Akira Toriumi, Toshiyuki Tabata, Choong Hyun Lee, Tomonori Nishimura, Cimang Lu
  • Patent number: 9691620
    Abstract: A semiconductor structure includes: a germanium layer 30; and an insulating film that has a film 32 that includes a germanium oxide and is formed on the germanium layer and a high dielectric oxide film 34 that is formed on the film including the germanium oxide and has a dielectric constant higher than that of a silicon oxide, wherein: an EOT of the insulating film is 2 nm or less; and on a presumption that an Au acting as a metal film is formed on the insulating film, a leak current density is 10?5×EOT+4 A/cm2 or less in a case where a voltage of the metal film with respect to the germanium layer is applied from a flat band voltage to an accumulation region side by 1 V.
    Type: Grant
    Filed: April 18, 2013
    Date of Patent: June 27, 2017
    Assignee: Japan Science and Technology Agency
    Inventors: Akira Toriumi, Choong-hyun Lee
  • Patent number: 9647074
    Abstract: A method of manufacturing a semiconductor substrate includes: heat-treating a germanium layer 30 with an oxygen concentration of 1×1016 cm?3 or greater in a reducing gas atmosphere at 700° C. or greater. Alternatively, a method of manufacturing a semiconductor substrate includes heat-treating a germanium layer 30 having an oxygen concentration of 1×1016 cm?3 or greater in a reducing gas atmosphere so that the oxygen concentration decreases.
    Type: Grant
    Filed: October 10, 2014
    Date of Patent: May 9, 2017
    Assignee: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Akira Toriumi, Choong-hyun Lee, Tomonori Nishimura
  • Publication number: 20160276445
    Abstract: A method of manufacturing a semiconductor substrate includes: heat-treating a germanium layer 30 with an oxygen concentration of 1×1016 cm?3 or greater in a reducing gas atmosphere at 700° C. or greater. Alternatively, a method of manufacturing a semiconductor substrate includes heat-treating a germanium layer 30 having an oxygen concentration of 1×1016 cm?3 or greater in a reducing gas atmosphere so that the oxygen concentration decreases.
    Type: Application
    Filed: October 10, 2014
    Publication date: September 22, 2016
    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Akira TORIUMI, Choong-hyun LEE, Tomonori NISHIMURA
  • Publication number: 20160218182
    Abstract: A semiconductor structure includes: a germanium layer; and a first insulating film that is formed on an upper surface of the germanium layer, primarily contains germanium oxide and a substance having an oxygen potential lower than an oxygen potential of germanium oxide, and has a physical film thickness of 3 nm or less; wherein a half width of frequency to height in a 1 ?m square area of the upper surface of the germanium layer is 0.7 nm or less.
    Type: Application
    Filed: June 6, 2014
    Publication date: July 28, 2016
    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Akira TORIUMI, Toshiyuki TABATA, Choong Hyun LEE, Tomonori NISHIMURA, Cimang LU
  • Publication number: 20160081620
    Abstract: An apparatus includes: a receiving unit for receiving a sensor signal for a body of a user from a wearable apparatus; a controller for classifying a physical activity of the user as one of a plurality of predefined activity models based on the received sensor signal, and generating prediction information about the body of the user based on a result of the classifying and profile information about the user; and an output device for outputting health care information to the user based on the prediction information.
    Type: Application
    Filed: September 18, 2015
    Publication date: March 24, 2016
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Rangavittal NARAYANAN, Vijay Narayan TIWARI, Saswata SAHOO, Mithun Manjnath NAYAK, Shankar M. VENKATESAN, Aloknath DE, Vivek JILLA, Choong-hyun LEE, Subramanian RAMAKRISHNAN, Ramachandran NARASIMHAMURTHY, Avinash PRASAD
  • Publication number: 20150228492
    Abstract: A semiconductor structure includes: a germanium layer 30; and an insulating film that has a film 32 that includes a germanium oxide and is formed on the germanium layer and a high dielectric oxide film 34 that is formed on the film including the germanium oxide and has a dielectric constant higher than that of a silicon oxide, wherein: an EOT of the insulating film is 2 nm or less; and on a presumption that an Au acting as a metal film is formed on the insulating film, a leak current density is 10?5×EOT+4 A/cm2 or less in a case where a voltage of the metal film with respect to the germanium layer is applied from a flat band voltage to an accumulation region side by 1 V.
    Type: Application
    Filed: April 18, 2013
    Publication date: August 13, 2015
    Inventors: Akira Toriumi, Choong-hyun Lee
  • Patent number: 8604377
    Abstract: Disclosed is an automatic transfer switch. According to the exemplary embodiment of the present invention, the automatic transfer switch alternatively supplying power from a commercial power terminal and an emergency power terminal to load terminals by moving a pair of movable contactors, wherein at least one of the pair of movable contactors are integrally formed with the commercial power terminal or the emergency power terminal through a wire made of a flexible material.
    Type: Grant
    Filed: July 15, 2011
    Date of Patent: December 10, 2013
    Assignee: Vitzrotech Co., Ltd
    Inventors: Choong-Hyun Lee, Jung-Woo Lee
  • Patent number: 8519285
    Abstract: Provided is a one body-type power transfer switch, in which a disconnecting portion is integrally formed to reduce errors arisen due to accumulated assembly tolerance and simplify manufacturing processes, thereby improving operators' convenience. The one body-type power transfer switch includes a normal power terminal or an emergency power terminal, a module including a load terminal formed at a lower portion of a side of the module so as to be spaced apart from the normal power terminal or the emergency power terminal, wherein the module is formed using an injection molding method, and side walls are integrally formed to have insulating power.
    Type: Grant
    Filed: May 11, 2010
    Date of Patent: August 27, 2013
    Assignee: Vitzrotech Co., Ltd
    Inventors: No-Chun Park, Choong-Hyun Lee
  • Patent number: 8471163
    Abstract: Provided is a cover for protecting an upper end of a normal power terminal and an upper end of an emergency power terminal of an auto transfer switch. In this case, terminal covers are formed on the upper ends of the terminals to protect the terminals, thereby preventing operators from being hurt by electric shock.
    Type: Grant
    Filed: April 30, 2010
    Date of Patent: June 25, 2013
    Assignee: Vitzrotech Co., Ltd.
    Inventors: No-Chun Park, Choong-Hyun Lee
  • Publication number: 20130015044
    Abstract: Disclosed is an automatic transfer switch. According to the exemplary embodiment of the present invention, the automatic transfer switch alternatively supplying power from a commercial power terminal and an emergency power terminal to load terminals by moving a pair of movable contactors, wherein at least one of the pair of movable contactors are integrally formed with the commercial power terminal or the emergency power terminal through a wire made of a flexible material.
    Type: Application
    Filed: July 15, 2011
    Publication date: January 17, 2013
    Inventors: Choong-Hyun LEE, Jung-Woo Lee
  • Patent number: 8354604
    Abstract: A cover of an electrically-connected portion of an auto transfer switch, which is detachable and includes an arc guide portion.
    Type: Grant
    Filed: April 30, 2010
    Date of Patent: January 15, 2013
    Assignee: Vitzrotech Co., Ltd.
    Inventors: No-Chun Park, Choong-Hyun Lee
  • Publication number: 20100307895
    Abstract: Provided is a one body-type power transfer switch, in which a disconnecting portion is integrally formed to reduce errors arisen due to accumulated assembly tolerance and simplify manufacturing processes, thereby improving operators' convenience.
    Type: Application
    Filed: May 11, 2010
    Publication date: December 9, 2010
    Inventors: No-Chun Park, Choong-Hyun Lee
  • Publication number: 20100276266
    Abstract: A cover of an electrically-connected portion of an auto transfer switch, which is detachable and includes an arc guide portion.
    Type: Application
    Filed: April 30, 2010
    Publication date: November 4, 2010
    Inventors: No-Chun Park, Choong-Hyun Lee
  • Publication number: 20100276265
    Abstract: Provided is a cover for protecting an upper end of a normal power terminal and an upper end of an emergency power terminal of an auto transfer switch. In this case, terminal covers are formed on the upper ends of the terminals to protect the terminals, thereby preventing operators from being hurt by electric shock.
    Type: Application
    Filed: April 30, 2010
    Publication date: November 4, 2010
    Inventors: No-Chun Park, Choong-Hyun Lee