Abstract: There is provided a semiconductor memory device capable of improving performance and reliability of an element. The semiconductor memory device includes a substrate including a cell region and a peripheral region, a cell region isolation layer in the substrate, isolating the cell region from the peripheral region, an isolation active region surrounded by the cell region isolation layer, a bit line structure on the cell region, including a cell conductive line and a cell gate electrode in the substrate of the cell region, crossing the cell conductive line.

Abstract: A neural network system includes a neural network circuit including first memory cells arranged in an array; and a self-referencing circuit electrically connected to a row line or a column line of the neural network circuit and configured to apply current to the connected row line or column line so that a plurality of target memory cells have preset target weights, wherein the target memory cells include all memory cells positioned on the row line or the column line to which the self-referencing circuit is connected.

Abstract: A semiconductor memory device is provided. The semiconductor memory device comprises a substrate including a cell region having an active region defined by a cell element isolation layer, a peripheral region near the cell region, and a boundary region between the cell region and the peripheral region. The device includes a word line structure in the substrate and extending in a first direction, a bit line structure on the substrate extending from the cell region to the boundary region in a second direction that crosses the first direction, including first and second cell conductive layers sequentially stacked on the substrate, and a bit line contact between the substrate and the bit line structure and connecting the substrate with the bit line structure. The second cell conductive layer in the boundary region is thicker than the second cell conductive layer in the cell region.

Abstract: Provided is a feeding block for transferring a process gas to a process chamber, the feeding block including a body, a first annular channel provided in the body, at least one first supply channel extending from an outer surface of the body to the first annular channel to supply a first process gas to the first annular channel, and at least one first discharge channel extending from the first annular channel to an outer surface of the body to discharge the first process gas in the first annular channel to an outside, wherein the body is provided as a single member such that the first supply channel, the first annular channel, and the first discharge channel have continuous inner surfaces.

Abstract: Provided is a substrate treatment apparatus including a treatment container equipped with a conductive member. The conductive member is made of a material having a lower resistivity than that of the treatment container. The conductive member prevents a rise of an electric potential of the treatment container, which is caused by charging during treatment of a substrate, thereby preventing the substrate from being contaminated and damaged by particles and electrostatic arcing.

Abstract: A substrate supporting assembly includes a susceptor plate including at least one substrate seat, and a plurality of gas flow lines for supplying a lifting gas, an acceleration gas, and a deceleration gas to the substrate seat, and at least one satellite on the at least one substrate seat and including an upper surface, and a lower surface where a rotation pattern for receiving a rotational force and a braking force from the acceleration gas and the deceleration gas is provided. The at least one satellite is lifted from the at least one substrate seat by the lifting gas supplied from the at least one substrate seat, is rotated relative to the susceptor plate by the acceleration gas supplied in a forward direction of rotation, to rotate the substrate, and is decelerated or stopped by the deceleration gas supplied in a reverse direction of rotation.

Abstract: Provided is a substrate treatment apparatus including a treatment container equipped with a conductive member. The conductive member is made of a material having a lower resistivity than that of the treatment container. The conductive member prevents a rise of an electric potential of the treatment container, which is caused by charging during treatment of a substrate, thereby preventing the substrate from being contaminated and damaged by particles and electrostatic arcing.

Abstract: A semiconductor device having a channel region that is formed in a germanium layer and has a first conductive type, and a source region and a drain region that are formed in the germanium layer and have a second conductive type different from the first conductive type, wherein an oxygen concentration in the channel region is less than an oxygen concentration in a junction interface between at least one of the source region and the drain region and a region that surrounds the at least one of the source region and the drain region and has the first conductive type.

Abstract: Disclosed is a method for producing a carbide derived carbon layer with a dimple pattern. The method includes forming a dimple pattern on the surface of a carbide ceramic material and forming a carbide derived carbon layer thereon. Also disclosed is a carbide derived carbon layer with a dimple pattern produced by the method. The carbide derived carbon layer with dimple pattern has high wear resistance, good adhesion to a machine part, and excellent frictional characteristics. The carbide derived carbon layer can be applied to various fields, such as coating of carbide coated and carbide materials. Particularly, the carbide derived carbon layer is suitable for coating of machine parts (e.g., sliding parts, mechanical seals, piston rings, and compressor vanes) where excellent mechanical properties are needed.

Abstract: A semiconductor device having a channel region that is formed in a germanium layer and has a first conductive type, and a source region and a drain region that are formed in the germanium layer and have a second conductive type different from the first conductive type, wherein an oxygen concentration in the channel region is less than an oxygen concentration in a junction interface between at least one of the source region and the drain region and a region that surrounds the at least one of the source region and the drain region and has the first conductive type.

Abstract: A semiconductor structure includes: a germanium layer; and a first insulating film that is formed on an upper surface of the germanium layer, primarily contains germanium oxide and a substance having an oxygen potential lower than an oxygen potential of germanium oxide, and has a physical film thickness of 3 nm or less; wherein a half width of frequency to height in a 1 ?m square area of the upper surface of the germanium layer is 0.7 nm or less.

Abstract: A semiconductor structure includes: a germanium layer 30; and an insulating film that has a film 32 that includes a germanium oxide and is formed on the germanium layer and a high dielectric oxide film 34 that is formed on the film including the germanium oxide and has a dielectric constant higher than that of a silicon oxide, wherein: an EOT of the insulating film is 2 nm or less; and on a presumption that an Au acting as a metal film is formed on the insulating film, a leak current density is 10?5×EOT+4 A/cm2 or less in a case where a voltage of the metal film with respect to the germanium layer is applied from a flat band voltage to an accumulation region side by 1 V.

Abstract: A method of manufacturing a semiconductor substrate includes: heat-treating a germanium layer 30 with an oxygen concentration of 1×1016 cm?3 or greater in a reducing gas atmosphere at 700° C. or greater. Alternatively, a method of manufacturing a semiconductor substrate includes heat-treating a germanium layer 30 having an oxygen concentration of 1×1016 cm?3 or greater in a reducing gas atmosphere so that the oxygen concentration decreases.

Abstract: A method of manufacturing a semiconductor substrate includes: heat-treating a germanium layer 30 with an oxygen concentration of 1×1016 cm?3 or greater in a reducing gas atmosphere at 700° C. or greater. Alternatively, a method of manufacturing a semiconductor substrate includes heat-treating a germanium layer 30 having an oxygen concentration of 1×1016 cm?3 or greater in a reducing gas atmosphere so that the oxygen concentration decreases.

Abstract: A semiconductor structure includes: a germanium layer; and a first insulating film that is formed on an upper surface of the germanium layer, primarily contains germanium oxide and a substance having an oxygen potential lower than an oxygen potential of germanium oxide, and has a physical film thickness of 3 nm or less; wherein a half width of frequency to height in a 1 ?m square area of the upper surface of the germanium layer is 0.7 nm or less.

Abstract: An apparatus includes: a receiving unit for receiving a sensor signal for a body of a user from a wearable apparatus; a controller for classifying a physical activity of the user as one of a plurality of predefined activity models based on the received sensor signal, and generating prediction information about the body of the user based on a result of the classifying and profile information about the user; and an output device for outputting health care information to the user based on the prediction information.

Abstract: A semiconductor structure includes: a germanium layer 30; and an insulating film that has a film 32 that includes a germanium oxide and is formed on the germanium layer and a high dielectric oxide film 34 that is formed on the film including the germanium oxide and has a dielectric constant higher than that of a silicon oxide, wherein: an EOT of the insulating film is 2 nm or less; and on a presumption that an Au acting as a metal film is formed on the insulating film, a leak current density is 10?5×EOT+4 A/cm2 or less in a case where a voltage of the metal film with respect to the germanium layer is applied from a flat band voltage to an accumulation region side by 1 V.

Abstract: Disclosed is an automatic transfer switch. According to the exemplary embodiment of the present invention, the automatic transfer switch alternatively supplying power from a commercial power terminal and an emergency power terminal to load terminals by moving a pair of movable contactors, wherein at least one of the pair of movable contactors are integrally formed with the commercial power terminal or the emergency power terminal through a wire made of a flexible material.

Abstract: Provided is a one body-type power transfer switch, in which a disconnecting portion is integrally formed to reduce errors arisen due to accumulated assembly tolerance and simplify manufacturing processes, thereby improving operators' convenience. The one body-type power transfer switch includes a normal power terminal or an emergency power terminal, a module including a load terminal formed at a lower portion of a side of the module so as to be spaced apart from the normal power terminal or the emergency power terminal, wherein the module is formed using an injection molding method, and side walls are integrally formed to have insulating power.

Abstract: Provided is a cover for protecting an upper end of a normal power terminal and an upper end of an emergency power terminal of an auto transfer switch. In this case, terminal covers are formed on the upper ends of the terminals to protect the terminals, thereby preventing operators from being hurt by electric shock.