Abstract: A MOS transistor employing a titanium-carbon-nitride (TiCN) gate electrode is provided. The MOS transistor has a gate insulating film, a gate electrode, and a source/drain region on a semiconductor substrate. The gate electrode is formed of a single TiCN film or a double film having a TiCN film and a low-resistant metal film formed thereon. The TiCN gate electrode exhibits a low resistance of about 80-100 .mu..OMEGA.-cm and can control variations in Fermi energy level.

Abstract: A MOS transistor employing a titanium-carbon-nitride (TiCN) gate electrode is provided. The MOS transistor has a gate insulating film, a gate electrode, and a source/drain region on a semiconductor substrate. The gate electrode is formed of a single TiCN film or a double film having a TiCN film and a low-resistant metal film formed thereon. The TiCN gate electrode exhibits a low resistance of about 80-100 .mu..OMEGA.-cm and can control variations in Fermi energy level.

Abstract: A manufacturing method of a target for sputtering comprises the steps of: compressing first and second oxide powders with high permeability to form first and second compressed materials, respectively; sintering the first and the second compressed materials to form a sintered body made of a third oxide crystal; pulverizing the sintered body made of the third oxide crystal to form a third oxide powder; mixing the third oxide powder and titanium powder and compressing the mixed powder to form a third compressed material; and sintering the third compressed material in a vacuum condition to form an oxide target. This manufacturing method produces a target which can stably form oxide thin film with high permeability at high voltage for a long time and can be applied to a direct current sputtering process.