Abstract: In one embodiment, a heat exchanger may be formed using a corrosion-resistant aluminum material to enable usage of water as a working fluid for the exchanger. In one embodiment, the exchanger may have an aluminum substrate with multiple treated layers formed thereon. A first treated layer corresponds to a hydrated aluminum oxide layer, and a second treated layer corresponds to a mono-layer organic molecule layer. Other embodiments are described and claimed.

Abstract: In one embodiment, a heat exchanger may be formed using a corrosion-resistant aluminum material to enable usage of water as a working fluid for the exchanger. In one embodiment, the exchanger may have an aluminum substrate with multiple treated layers formed thereon. A first treated layer corresponds to a hydrated aluminum oxide layer, and a second treated layer corresponds to a mono-layer organic molecule layer. Other embodiments are described and claimed.

Abstract: The present invention includes single electron structures and devices comprising a substrate having an upper surface, one or more dielectric layers formed on the upper surface of the substrate and having at least one exposed portion, at least one monolayer of self-assembling molecules attracted to and in contact with the at least one exposed portion of only one of the one or more dielectric layers, one or more nanoparticles attracted to and in contact with the at least one monolayer, and at least one tunneling barrier in contact with the one or more nanoparticles. Typically, the single electron structure or device formed therefrom further comprise a drain, a gate and a source to provide single electron behavior, wherein there is a defined gap between source and drain and the one or more nanoparticles is positioned between the source and drain.

Abstract: The present invention provides for a system and method of characterizing the integrity of a barrier structure. The barrier structure is an interconnect comprising a porous dielectric layer sandwiched between at least one barrier layer and at least one conducting layer. The method of characterizing the integrity of such an interconnect includes providing an interconnect, infiltrating the interconnect with a solution comprising electrolytes, applying an external bias to the infiltrated interconnect, and characterizing the integrity of the interconnect after application of the external bias.

Abstract: A coolant capable of enhancing corrosion inhibition includes a potassium formate solution having a first concentration of a polyphosphate salt and a second concentration of dicyandiamide. In one embodiment, such a coolant may provide corrosion inhibition that is especially effective for silicon and aluminum, among other materials. The corrosion protection may be enhanced for certain materials by adding benzotriazole in a third concentration to the potassium formate solution.

Abstract: A coolant capable of enhancing corrosion inhibition includes a potassium formate solution having a first concentration of a polyphosphate salt and a second concentration of dicyandiamide. In one embodiment, such a coolant may provide corrosion inhibition that is especially effective for silicon and aluminum, among other materials. The corrosion protection may be enhanced for certain materials by adding benzotriazole in a third concentration to the potassium formate solution.

Abstract: The present invention provides for a system and method of characterizing the integrity of a barrier structure. The barrier structure is an interconnect comprising a porous dielectric layer sandwiched between at least one barrier layer and at least one conducting layer. The method of characterizing the integrity of such an interconnect includes providing an interconnect, infiltrating the interconnect with a solution comprising electrolytes, applying an external bias to the infiltrated interconnect, and characterizing the integrity of the interconnect after application of the external bias.

Abstract: According to one aspect of the invention, a modified Sn—Ag—Cu, lead-free solder alloy is disclosed. The alloy comprises an additive element selected from the group consisting of Au, Ni, Pd, Fe, Co, Zn, Cr and combinations thereof, present in the alloy in an amount effect to form an intermetallic interface between the alloy a substrate, the intermetallic interface having a composite structure without scallop formation and including Sn islands.

Abstract: A thermal joint for facilitating heat transfer between two components is described. The thermal joint is formed from an alloy of at least two constituents. The alloy has a liquid temperature and a solid temperature. When the operating temperature falls between the liquid temperature and the solid temperature, the alloy has at least one liquid phase which is in substantial equilibrium with at least one solid phase. The thermal joint is used between a heat-generating component, such as a semiconducting device, and a heat-dissipating component, such as a heat sink. Such thermal joint substantially reduces the thermal resistance between the two components.

Abstract: A thermal joint for facilitating heat transfer between two components is described. The thermal joint is formed from an alloy of at least two constituents. The alloy has a liquid temperature and a solid temperature. When the operating temperature falls between the liquid temperature and the solid temperature, the alloy has at least one liquid phase which is in substantial equilibrium with at least one solid phase. The thermal joint is used between a heat-generating component, such as a semiconducting device, and a heat-dissipating component, such as a heat sink. Such thermal joint substantially reduces the thermal resistance between the two components.