Patents by Inventor CHOONGEUI LEE

CHOONGEUI LEE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11836041
    Abstract: A storage device includes a nonvolatile memory device, and a controller that reads first data from the nonvolatile memory device. When a number of first errors of the first data is not smaller than a first threshold value, the controller determines whether the first errors include timing errors arising from a variation of signal transmission timings between the nonvolatile memory device and the controller and performs a retraining operation on the signal transmission timings when the first errors include the timing errors.
    Type: Grant
    Filed: August 31, 2022
    Date of Patent: December 5, 2023
    Inventors: Chulseung Lee, Soon Suk Hwang, Choongeui Lee
  • Patent number: 11704064
    Abstract: A memory controller configured to control a non-volatile memory device includes: a signal generator configured to generate a plurality of control signals comprising a first signal and a second control signal; a core configured to provide a command for an operation of the non-volatile device; and a controller interface circuit configured to interface with the non-volatile memory device, wherein the controller interface circuit comprises a first transmitter connected to a first signal line and a second signal line; and a first receiver connected to the first signal line, and the first control signal and the second control signal are respectively transmitted to the non-volatile memory device through the first signal line and the second signal line.
    Type: Grant
    Filed: May 17, 2021
    Date of Patent: July 18, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Choongeui Lee, Chulseung Lee
  • Publication number: 20230168707
    Abstract: A memory controller for a memory device, the memory controller including: a command generator configured to generate a command signal based on a system clock signal, and to generate phase difference information for the command signal; and a memory interface configured to receive the command signal and the phase difference information from the command generator, to adjust a timing of the command signal based on the phase difference information, and transmit the command signal of which the timing is adjusted as a timing adjusted command signal to the memory device.
    Type: Application
    Filed: June 22, 2022
    Publication date: June 1, 2023
    Inventors: Choongeui LEE, Hyungjin KIM, Jonghyun JANG, Chulseung LEE
  • Publication number: 20220413963
    Abstract: A storage device includes a nonvolatile memory device, and a controller that reads first data from the nonvolatile memory device. When a number of first errors of the first data is not smaller than a first threshold value, the controller determines whether the first errors include timing errors arising from a variation of signal transmission timings between the nonvolatile memory device and the controller and performs a retraining operation on the signal transmission timings when the first errors include the timing errors.
    Type: Application
    Filed: August 31, 2022
    Publication date: December 29, 2022
    Inventors: CHULSEUNG LEE, SOON SUK HWANG, CHOONGEUI LEE
  • Patent number: 11461172
    Abstract: A storage device includes a nonvolatile memory device, and a controller that reads first data from the nonvolatile memory device. When a number of first errors of the first data is not smaller than a first threshold value, the controller determines whether the first errors include timing errors arising from a variation of signal transmission timings between the nonvolatile memory device and the controller and performs a retraining operation on the signal transmission timings when the first errors include the timing errors.
    Type: Grant
    Filed: March 11, 2021
    Date of Patent: October 4, 2022
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chulseung Lee, Soon Suk Hwang, Choongeui Lee
  • Publication number: 20220011978
    Abstract: A memory controller configured to control a non-volatile memory device includes: a signal generator configured to generate a plurality of control signals comprising a first signal and a second control signal; a core configured to provide a command for an operation of the non-volatile device; and a controller interface circuit configured to interface with the non-volatile memory device, wherein the controller interface circuit comprises a first transmitter connected to a first signal line and a second signal line; and a first receiver connected to the first signal line, and the first control signal and the second control signal are respectively transmitted to the non-volatile memory device through the first signal line and the second signal line.
    Type: Application
    Filed: May 17, 2021
    Publication date: January 13, 2022
    Inventors: Choongeui Lee, Chulseung Lee
  • Publication number: 20210200634
    Abstract: A storage device includes a nonvolatile memory device, and a controller that reads first data from the nonvolatile memory device. When a number of first errors of the first data is not smaller than a first threshold value, the controller determines whether the first errors include timing errors arising from a variation of signal transmission timings between the nonvolatile memory device and the controller and performs a retraining operation on the signal transmission timings when the first errors include the timing errors.
    Type: Application
    Filed: March 11, 2021
    Publication date: July 1, 2021
    Inventors: CHULSEUNG LEE, SOON SUK HWANG, CHOONGEUI LEE
  • Patent number: 10970164
    Abstract: A storage device includes a nonvolatile memory device, and a controller that reads first data from the nonvolatile memory device. When a number of first errors of the first data is not smaller than a first threshold value, the controller determines whether the first errors include timing errors arising from a variation of signal transmission timings between the nonvolatile memory device and the controller and performs a retraining operation on the signal transmission timings when the first errors include the timing errors.
    Type: Grant
    Filed: January 15, 2019
    Date of Patent: April 6, 2021
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chulseung Lee, Soon Suk Hwang, Choongeui Lee
  • Publication number: 20190354431
    Abstract: A storage device includes a nonvolatile memory device, and a controller that reads first data from the nonvolatile memory device. When a number of first errors of the first data is not smaller than a first threshold value, the controller determines whether the first errors include timing errors arising from a variation of signal transmission timings between the nonvolatile memory device and the controller and performs a retraining operation on the signal transmission timings when the first errors include the timing errors.
    Type: Application
    Filed: January 15, 2019
    Publication date: November 21, 2019
    Inventors: CHULSEUNG LEE, SOON SUK HWANG, CHOONGEUI LEE
  • Patent number: 10403375
    Abstract: A storage device includes a plurality of nonvolatile memory devices each exchanging data by using a data strobe signal and a data signal, and a storage controller categorizing the plurality of nonvolatile memory devices into a plurality of groups and performing training in units of the plurality of groups. The storage controller performs data training on a first nonvolatile memory device selected in a first group of the plurality of groups and sets a delay of a data signal of a second nonvolatile memory device included in the first group by using a result value of the data training for the first nonvolatile memory device.
    Type: Grant
    Filed: April 16, 2018
    Date of Patent: September 3, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chulseung Lee, Soon Suk Hwang, ChoongEui Lee
  • Patent number: 10366022
    Abstract: A data training method of a storage device, which includes a storage controller and a nonvolatile memory device, includes transmitting a read training command to the nonvolatile memory device, receiving a first training pattern output from the nonvolatile memory device in response to the read training command, receiving a second training pattern output from the nonvolatile memory device in response to the read training command, comparing the received first training pattern and the received second training pattern with a reference pattern, and determining a read timing offset of the storage controller depending on the comparison result.
    Type: Grant
    Filed: January 15, 2018
    Date of Patent: July 30, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chulseung Lee, Taesung Lee, Choongeui Lee, Soon Suk Hwang
  • Patent number: 10325633
    Abstract: Disclosed is a storage device. The storage device includes a nonvolatile memory device that receives write data based on a data strobe signal and a data signal and outputs read data based on the data strobe signal and the data signal, and a controller that performs a training operation for training the nonvolatile memory device to align the data signal and the data strobe signal. The controller detects a left edge of a window of the data signal for the training operation. The controller determines a center of the window by using the detected left edge and unit interval length information of the data signal or determines a start point of a detection operation for detecting a right edge of the window by using the detected left edge and the unit interval length information.
    Type: Grant
    Filed: April 25, 2018
    Date of Patent: June 18, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chulseung Lee, ChoongEui Lee, Soon Suk Hwang, Kyuwook Han
  • Publication number: 20190080730
    Abstract: Disclosed is a storage device. The storage device includes a nonvolatile memory device that receives write data based on a data strobe signal and a data signal and outputs read data based on the data strobe signal and the data signal, and a controller that performs a training operation for training the nonvolatile memory device to align the data signal and the data strobe signal. The controller detects a left edge of a window of the data signal for the training operation. The controller determines a center of the window by using the detected left edge and unit interval length information of the data signal or determines a start point of a detection operation for detecting a right edge of the window by using the detected left edge and the unit interval length information.
    Type: Application
    Filed: April 25, 2018
    Publication date: March 14, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Chulseung LEE, ChoongEui LEE, Soon Suk HWANG, Kyuwook HAN
  • Publication number: 20190080774
    Abstract: A storage device includes a plurality of nonvolatile memory devices each exchanging data by using a data strobe signal and a data signal, and a storage controller categorizing the plurality of nonvolatile memory devices into a plurality of groups and performing training in units of the plurality of groups. The storage controller performs data training on a first nonvolatile memory device selected in a first group of the plurality of groups and sets a delay of a data signal of a second nonvolatile memory device included in the first group by using a result value of the data training for the first nonvolatile memory device.
    Type: Application
    Filed: April 16, 2018
    Publication date: March 14, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Chulseung Lee, Soon Suk Hwang, ChoongEui Lee
  • Publication number: 20190004984
    Abstract: A data training method of a storage device, which includes a storage controller and a nonvolatile memory device, includes transmitting a read training command to the nonvolatile memory device, receiving a first training pattern output from the nonvolatile memory device in response to the read training command, receiving a second training pattern output from the nonvolatile memory device in response to the read training command, comparing the received first training pattern and the received second training pattern with a reference pattern, and determining a read timing offset of the storage controller depending on the comparison result.
    Type: Application
    Filed: January 15, 2018
    Publication date: January 3, 2019
    Inventors: CHULSEUNG LEE, TAESUNG LEE, CHOONGEUI LEE, SOON SUK HWANG