Abstract: A waveguide based variable attenuator device including one or more attenuators each including a porous dielectric material; and a metal coating on the top of the dielectric material; and an actuator coupled to the attenuator. The actuator is configured to position, with nanometer resolution, the one or more attenuators in a waveguide configured and dimensioned to guide an electromagnetic wave having a frequency in a range of 100 gigahertz (GHz) to 1 terahertz (THz). The actuator controls at least one of a position or a volume of the one attenuator inserted in the waveguide to achieve a variable or pre-determined attenuation of the electromagnetic wave transmitted through waveguide.

Abstract: A solid-state device chip including diodes (generating a higher or lower frequency output through frequency multiplication or mixing of the input frequency) and a novel on-chip diplexing design that allows combination of two or more multiplier or mixer structures operating at different frequency bands within the 50-5000 GHz range within a same chip and/or waveguide. The on-chip diplexing design consists of a single-substrate multiplier chip with two or more multiplying structures each one containing 2 or more Schottky diodes. The diodes in each structure are tuned to one portion of the target frequency band, resulting in the two or more structures working together as a whole as a large broadband multiplier or mixer. Thus, an increase in bandwidth from 10-15% (current state-of-the-art) to at least 40% is achieved. Depending on the target frequencies, each subset of diodes within the chip can be designed to work either as a doubler or a tripler.

Abstract: A set of antenna geometries for use in integrated arrays at terahertz frequencies are described. Two fabrication techniques to construct such antennas are presented. The first technique uses an advanced laser micro-fabrication, allowing fabricating advanced 3D geometries. The second technique uses photolithographic processes, allowing the fabrication of arrays on a single wafer in parallel.

Abstract: A waveguide based variable attenuator device including one or more attenuators each including a porous dielectric material; and a metal coating on the top of the dielectric material; and an actuator coupled to the attenuator. The actuator is configured to position, with nanometer resolution, the one or more attenuators in a waveguide configured and dimensioned to guide an electromagnetic wave having a frequency in a range of 100 gigahertz (GHz) to 1 terahertz (THz). The actuator controls at least one of a position or a volume of the one attenuator inserted in the waveguide to achieve a variable or pre-determined attenuation of the electromagnetic wave transmitted through waveguide.

Abstract: A solid-state device chip including diodes (generating a higher or lower frequency output through frequency multiplication or mixing of the input frequency) and a novel on-chip diplexing design that allows combination of two or more multiplier or mixer structures operating at different frequency bands within the 50-5000 GHz range within a same chip and/or waveguide. The on-chip diplexing design consists of a single-substrate multiplier chip with two or more multiplying structures each one containing 2 or more Schottky diodes. The diodes in each structure are tuned to one portion of the target frequency band, resulting in the two or more structures working together as a whole as a large broadband multiplier or mixer. Thus, an increase in bandwidth from 10-15% (current state-of-the-art) to at least 40% is achieved. Depending on the target frequencies, each subset of diodes within the chip can be designed to work either as a doubler or a tripler.

Abstract: A set of antenna geometries for use in integrated arrays at terahertz frequencies are described. Two fabrication techniques to construct such antennas are presented. The first technique uses an advanced laser micro-fabrication, allowing fabricating advanced 3D geometries. The second technique uses photolithographic processes, allowing the fabrication of arrays on a single wafer in parallel.

Abstract: A set of antenna geometries for use in integrated arrays at terahertz frequencies are described. Two fabrication techniques to construct such antennas are presented. The first technique uses an advanced laser micro-fabrication, allowing fabricating advanced 3D geometries. The second technique uses photolithographic processes, allowing the fabrication of arrays on a single wafer in parallel.

Abstract: A silicon alignment pin is used to align successive layer of component made in semiconductor chips and/or metallic components to make easier the assembly of devices having a layered structure. The pin is made as a compressible structure which can be squeezed to reduce its outer diameter, have one end fit into a corresponding alignment pocket or cavity defined in a layer of material to be assembled into a layered structure, and then allowed to expand to produce an interference fit with the cavity. The other end can then be inserted into a corresponding cavity defined in a surface of a second layer of material that mates with the first layer. The two layers are in registry when the pin is mated to both. Multiple layers can be assembled to create a multilayer structure. Examples of such devices are presented.

Abstract: A solid state device chip including diodes (generating a higher frequency output through frequency multiplication of the input frequency) and a novel on-chip power combining design. Together with the on-chip power combining, the chip has increased efficiency because the diodes' anodes, being micro-fabricated simultaneously on the same patch of a GaAs wafer under identical conditions, are very well balanced. The diodes' GaAs heterostructure and the overall chip geometry are designed to be optimized for high power operation. As a result of all these features, the device can generate record-setting power having a signal frequency in the F-band and W-band (30% conversion efficiency).

Abstract: A multi-pixel terahertz transceiver is constructed using a stack of semiconductor layers that communicate using vias defined within the semiconductor layers. By using a stack of semiconductor layers, the various electrical functions of each layer can be tested easily without having to assemble the entire transceiver. In addition, the design allows the production of a transceiver having pixels set 10 mm apart.

Abstract: A silicon alignment pin is used to align successive layer of component made in semiconductor chips and/or metallic components to make easier the assembly of devices having a layered structure. The pin is made as a compressible structure which can be squeezed to reduce its outer diameter, have one end fit into a corresponding alignment pocket or cavity defined in a layer of material to be assembled into a layered structure, and then allowed to expand to produce an interference fit with the cavity. The other end can then be inserted into a corresponding cavity defined in a surface of a second layer of material that mates with the first layer. The two layers are in registry when the pin is mated to both. Multiple layers can be assembled to create a multilayer structure. Examples of such devices are presented.

Abstract: A silicon alignment pin is used to align successive layers of components made in semiconductor chips and/or metallic components to make easier the assembly of devices having a layered structure. The pin is made as a compressible structure which can be squeezed to reduce its outer diameter, have one end fit into a corresponding alignment pocket or cavity defined in a layer of material to be assembled into a layered structure, and then allowed to expand to produce an interference fit with the cavity. The other end can then be inserted into a corresponding cavity defined in a surface of a second layer of material that mates with the first layer. The two layers are in registry when the pin is mated to both. Multiple layers can be assembled to create a multilayer structure. Examples of such devices are presented.

Abstract: A multi-step silicon etching process has been developed to fabricate silicon-based terahertz (THz) waveguide components. This technique provides precise dimensional control across multiple etch depths with batch processing capabilities. Nonlinear and passive components such as mixers and multipliers waveguides, hybrids, OMTs and twists have been fabricated and integrated into a small silicon package. This fabrication technique enables a wafer-stacking architecture to provide ultra-compact multi-pixel receiver front-ends in the THz range.

Abstract: A solid state device chip including diodes (generating a higher frequency output through frequency multiplication of the input frequency) and a novel on-chip power combining design. Together with the on-chip power combining, the chip has increased efficiency because the diodes' anodes, being micro-fabricated simultaneously on the same patch of a GaAs wafer under identical conditions, are very well balanced. The diodes' GaAs heterostructure and the overall chip geometry are designed to be optimized for high power operation. As a result of all these features, the device can generate record-setting power having a signal frequency in the F-band and W-band (30% conversion efficiency).

Abstract: A multi-pixel terahertz transceiver is constructed using a stack of semiconductor layers that communicate using vias defined within the semiconductor layers. By using a stack of semiconductor layers, the various electrical functions of each layer can be tested easily without having to assemble the entire transceiver. In addition, the design allows the production of a transceiver having pixels set 10 mm apart.

Abstract: A data link, comprising a substrate; and an ink structure printed and/or marked on a substrate, wherein the structure directs an electric, magnetic, and/or electromagnetic wave between two locations.

Abstract: A system for wirelessly communicating between a base station and a mobile device, including a reflector integrated with a mobile device, wherein the reflector reflects carrier radiation transmitted from a base station, to form a reflection of the carrier radiation, and input data from the mobile device modulates a reflection coefficient of the reflector, thereby modulating the reflection such that the reflection of the carrier radiation carries the input data to the base station.

Abstract: A novel MMIC on-chip power-combined frequency multiplier device and a method of fabricating the same, comprising two or more multiplying structures integrated on a single chip, wherein each of the integrated multiplying structures are electrically identical and each of the multiplying structures include one input antenna (E-probe) for receiving an input signal in the millimeter-wave, submillimeter-wave or terahertz frequency range inputted on the chip, a stripline based input matching network electrically connecting the input antennas to two or more Schottky diodes in a balanced configuration, two or more Schottky diodes that are used as nonlinear semiconductor devices to generate harmonics out of the input signal and produce the multiplied output signal, stripline based output matching networks for transmitting the output signal from the Schottky diodes to an output antenna, and an output antenna (E-probe) for transmitting the output signal off the chip into the output waveguide transmission line.

Abstract: A multi-step silicon etching process has been developed to fabricate silicon-based terahertz (THz) waveguide components. This technique provides precise dimensional control across multiple etch depths with batch processing capabilities. Nonlinear and passive components such as mixers and multipliers waveguides, hybrids, OMTs and twists have been fabricated and integrated into a small silicon package. This fabrication technique enables a wafer-stacking architecture to provide ultra-compact multi-pixel receiver front-ends in the THz range.

Abstract: An antenna element suitable for integrated arrays at terahertz frequencies is disclosed. The antenna element comprises an extended spherical (e.g. hemispherical) semiconductor lens, e.g. silicon, antenna fed by a leaky wave waveguide feed. The extended spherical lens comprises a substantially spherical lens adjacent a substantially planar lens extension. A couple of TE/TM leaky wave modes are excited in a resonant cavity formed between a ground plane and the substantially planar lens extension by a waveguide block coupled to the ground plane. Due to these modes, the primary feed radiates inside the lens with a directive pattern that illuminates a small sector of the lens. The antenna structure is compatible with known semiconductor fabrication technology and enables production of large format imaging arrays.