Abstract: A process of forming an electronic device can include providing a workpiece. The workpiece can include a substrate, an interlevel dielectric overlying the substrate, a refractory-metal-containing layer over the interlevel dielectric, and a first metal-containing layer over the refractory-metal-containing layer. The first metal-containing layer can include a metal element other than a refractory metal element. The process further includes polishing the first metal-containing layer and the refractory-metal-containing layer as a continuous action to expose the interlevel dielectric. In one embodiment, the metal element can include copper, nickel, or a noble metal. In another embodiment, polishing can be performed using a selectivity agent to reduce the amount of the interlevel dielectric removed.

Abstract: A process of forming an electronic device can include providing a workpiece. The workpiece can include a substrate, an interlevel dielectric overlying the substrate, a refractory-metal-containing layer over the interlevel dielectric, and a first metal-containing layer over the refractory-metal-containing layer. The first metal-containing layer can include a metal element other than a refractory metal element. The process further includes polishing the first metal-containing layer and the refractory-metal-containing layer as a continuous action to expose the interlevel dielectric. In one embodiment, the metal element can include copper, nickel, or a noble metal. In another embodiment, polishing can be performed using a selectivity agent to reduce the amount of the interlevel dielectric removed.

Abstract: A process of forming an electronic device can include providing a workpiece. The workpiece can include a substrate, an interlevel dielectric overlying the substrate, a refractory-metal-containing layer over the interlevel dielectric, and a first metal-containing layer over the refractory-metal-containing layer. The first metal-containing layer can include a metal element other than a refractory metal element. The process further includes polishing the first metal-containing layer and the refractory-metal-containing layer as a continuous action to expose the interlevel dielectric. In one embodiment, the metal element can include copper, nickel, or a noble metal. In another embodiment, polishing can be performed using a selectivity agent to reduce the amount of the interlevel dielectric removed.

Abstract: A process of forming an electronic device can include providing a workpiece. The workpiece can include a substrate, an interlevel dielectric overlying the substrate, a refractory-metal-containing layer over the interlevel dielectric, and a first metal-containing layer over the refractory-metal-containing layer. The first metal-containing layer can include a metal element other than a refractory metal element. The process further includes polishing the first metal-containing layer and the refractory-metal-containing layer as a continuous action to expose the interlevel dielectric. In one embodiment, the metal element can include copper, nickel, or a noble metal. In another embodiment, polishing can be performed using a selectivity agent to reduce the amount of the interlevel dielectric removed.

Abstract: A method of processing a semiconductor structure is provided. The method includes forming a polish stop layer over one or more features on a substrate; forming a first dielectric layer over the polish stop layer, a valley portion of the first dielectric layer being just above a top of the polish stop layer; and polishing the dielectric layer down to the top of the polish stop layer. By forming a just enough dielectric layer to allow gap-fill on the substrate and polishing the dielectric layer down to the top of the polish stop layer, the method can reduce the cost and controls associated with forming the first dielectric layer.

Abstract: In a semiconductor process which utilizes a plasma within a process tool chamber, a method of using optical emission spectroscopy (OES) to monitor a particular parameter of the process is disclosed. A first wavelength present in the plasma is determined which varies highly in intensity depending on the particular parameter by observing a statistically significant sample representing variations of the particular parameter. A second wavelength of chemical significance to the process is also determined which is relatively stable in intensity over time irrespective of variations of the particular parameter, also by observing a statistically significant sample representing variations of the particular parameter. These two wavelengths may be determined from test wafers and off-line physical measurements.