Patents by Inventor Chris Bevis

Chris Bevis has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210305037
    Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
    Type: Application
    Filed: February 1, 2021
    Publication date: September 30, 2021
    Applicant: NOVA MEASURING INSTRUMENTS INC.
    Inventors: David A. REED, Bruno W. SCHUELER, Bruce H. NEWCOME, Rodney SMEDT, Chris BEVIS
  • Patent number: 10910208
    Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
    Type: Grant
    Filed: April 23, 2020
    Date of Patent: February 2, 2021
    Assignee: NOVA MEASURING INSTRUMENTS, INC.
    Inventors: David A. Reed, Bruno W. Schueler, Bruce H. Newcome, Rodney Smedt, Chris Bevis
  • Publication number: 20200258733
    Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
    Type: Application
    Filed: April 23, 2020
    Publication date: August 13, 2020
    Inventors: David A. REED, Bruno W. SCHUELER, Bruce H. NEWCOME, Rodney SMEDT, Chris BEVIS
  • Patent number: 10636644
    Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
    Type: Grant
    Filed: August 30, 2019
    Date of Patent: April 28, 2020
    Assignee: NOVA MEASURING INSTRUMENTS INC.
    Inventors: David A. Reed, Bruno W. Schueler, Bruce H. Newcome, Rodney Smedt, Chris Bevis
  • Publication number: 20190385831
    Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
    Type: Application
    Filed: August 30, 2019
    Publication date: December 19, 2019
    Inventors: David A. REED, Bruno W. SCHUELER, Bruce H. NEWCOME, Rodney SMEDT, Chris BEVIS
  • Patent number: 10403489
    Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass, spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
    Type: Grant
    Filed: July 18, 2018
    Date of Patent: September 3, 2019
    Assignee: NOVA MEASURING INSTRUMENTS INC.
    Inventors: David A. Reed, Bruno W. Schueler, Bruce H. Newcome, Rodney Smedt, Chris Bevis
  • Publication number: 20180330935
    Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass, spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
    Type: Application
    Filed: July 18, 2018
    Publication date: November 15, 2018
    Inventors: David A. REED, Bruno W. Schueler, Bruce H. Newcome, Rodney Smedt, Chris Bevis
  • Patent number: 10056242
    Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
    Type: Grant
    Filed: February 10, 2016
    Date of Patent: August 21, 2018
    Assignee: Nova Measuring Instruments Inc.
    Inventors: David A. Reed, Bruno W. Schueler, Bruce H. Newcome, Rodney Smedt, Chris Bevis
  • Publication number: 20180025897
    Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
    Type: Application
    Filed: February 10, 2016
    Publication date: January 25, 2018
    Inventors: David A. REED, Bruno W SCHUELER, Bruce H NEWCOME, Rodney SMEDT, Chris BEVIS
  • Patent number: 7098456
    Abstract: One embodiment disclosed relates to a method for accurate electron beam metrology. A substrate with a target feature is loaded into a scanning electron microscope. An electron beam is scanned over the target feature, and scattered electrons are detected therefrom. A characteristic of the target feature is measured by finding optimal values for parameters of a mathematical model which accounts for substrate charging effects. Principal component analysis may be used to advantageously result in reduced requirements for processing time and/or computational speed.
    Type: Grant
    Filed: August 13, 2004
    Date of Patent: August 29, 2006
    Assignee: KLA-Tencor Technologies Corporation
    Inventors: Gian Francesco Lorusso, Paola De Cecco, Luca Grella, David L. Adler, David Goodstein, Chris Bevis