Patents by Inventor Chris Bowen

Chris Bowen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8026507
    Abstract: A gated quantum well device formed as an MOS capacitor is disclosed. The quantum well is an inversion region less than 20 nanometers wide under the MOS gate. The device may be fabricated in either polarity, and integrated into a CMOS IC, configured as a quantum dot device or a quantum wire device. The device may be operated as a precision charge pump, with a minority carrier injection region added to speed well filling.
    Type: Grant
    Filed: August 20, 2009
    Date of Patent: September 27, 2011
    Assignee: Texas Instruments Incorporated
    Inventors: Tathagata Chatterjee, Henry Litzmann Edwards, Chris Bowen
  • Patent number: 7683364
    Abstract: A gated resonant tunneling diode (GRTD) is disclosed including a metal oxide semiconductor (MOS) gate over a gate dielectric layer which is biased to form an inversion layer between two barrier regions, resulting in a quantum well less than 15 nanometers wide. Source and drain regions adjacent to the barrier regions control current flow in and out of the quantum well. The GRTD may be integrated in CMOS ICs as a quantum dot or a quantum wire device. The GRTD may be operated in a negative conductance mode, in a charge pump mode and in a radiative emission mode.
    Type: Grant
    Filed: September 4, 2008
    Date of Patent: March 23, 2010
    Assignee: Texas Instruments Incorporated
    Inventors: Henry Litzmann Edwards, Chris Bowen, Tathagata Chatterjee
  • Publication number: 20100045365
    Abstract: A gated quantum well device formed as an MOS capacitor is disclosed. The quantum well is an inversion region less than 20 nanometers wide under the MOS gate. The device may be fabricated in either polarity, and integrated into a CMOS IC, configured as a quantum dot device or a quantum wire device. The device may be operated as a precision charge pump, with a minority carrier injection region added to speed well filling.
    Type: Application
    Filed: August 20, 2009
    Publication date: February 25, 2010
    Applicant: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Tathagata CHATTERJEE, Henry Litzmann EDWARDS, Chris BOWEN
  • Publication number: 20090152626
    Abstract: Shrinking dimensions of MOS transistors in integrated circuits requires tighter distributions of dopants in pocket regions from halo ion implant processes. In conventional fabrication process sequences, halo dopant distributions spread during source/drain anneals. The instant invention is a method of fabricating MOS transistors in an integrated circuit in which halo ion are performed after source/drain anneals. In the inventive method, source/drain spacers on MOS gate sidewalls are removed prior to halo ion implant processes. Spacers to offset metal silicide are formed after halo implants and may be of low-k dielectric material to reduce gate to drain capacitance. A compressive stress layer may be deposited on MOS gates after source/drain spacers are removed for greater stress transfer efficiency to the MOS gates. An integrated circuit embodying the inventive method is also disclosed.
    Type: Application
    Filed: December 18, 2007
    Publication date: June 18, 2009
    Applicant: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Ramesh Venugopal, Srinivasan Chakravarthi, Chris Bowen
  • Publication number: 20090057651
    Abstract: A gated resonant tunneling diode (GRTD) is disclosed including a metal oxide semiconductor (MOS) gate over a gate dielectric layer which is biased to form an inversion layer between two barrier regions, resulting in a quantum well less than 15 nanometers wide. Source and drain regions adjacent to the barrier regions control current flow in and out of the quantum well. The GRTD may be integrated in CMOS ICs as a quantum dot or a quantum wire device. The GRTD may be operated in a negative conductance mode, in a charge pump mode and in a radiative emission mode.
    Type: Application
    Filed: September 4, 2008
    Publication date: March 5, 2009
    Applicant: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Henry Litzmann Edwards, Chris Bowen, Tathagata Chatterjee