Abstract: In one aspect, several apparatuses are described that allow a processing chamber designed for plasma-enhanced chemical vapor deposition on 300 mm wafers to be performed on 200 mm wafers. More specifically, a modified pedestal, carrier plate, and showerhead are described that have been designed for 200 mm wafers and are compatible with 300 mm wafer processing chambers. It has further been observed that deposited films using the modified 200 mm apparatuses are comparable in quality with films deposited with the 300 mm devices they replace.