Abstract: A film bulk acoustic resonator (FBAR) structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, and a second electrode disposed over the first piezoelectric layer. A bridge is disposed between the first electrode and the piezoelectric layer.

Abstract: In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode; an acoustic coupling layer disposed between the first BAW resonator and the second BAW resonator; and a bridge disposed between the first lower electrode of the first BAW resonator and the second upper electrode of the second BAW resonator. An inner raised region or an outer raised region, or both are disposed over the second upper electrode.

Abstract: An acoustic resonator comprises a first electrode a second electrode and a piezoelectric layer disposed between the first and second electrodes. The acoustic resonator further comprises a reflective element disposed beneath the first electrode, the second electrode and the piezoelectric layer. An overlap of the reflective element, the first electrode, the second electrode and the piezoelectric layer comprises an active area of the acoustic resonator. The acoustic resonator also comprises a bridge adjacent to a termination of the active area of the acoustic resonator.

Abstract: An acoustic resonator comprises a first electrode a second electrode and a piezoelectric layer disposed between the first and second electrodes. The acoustic resonator further comprises a reflective element disposed beneath the first electrode, the second electrode and the piezoelectric layer. An overlap of the reflective element, the first electrode, the second electrode and the piezoelectric layer comprises an active area of the acoustic resonator. The acoustic resonator also comprises a bridge adjacent to a termination of the active area of the acoustic resonator.

Abstract: An acoustic resonator comprises a first electrode a second electrode and a piezoelectric layer disposed between the first and second electrodes. The acoustic resonator further comprises a reflective element disposed beneath the first electrode, the second electrode and the piezoelectric layer. An overlap of the reflective element, the first electrode, the second electrode and the piezoelectric layer comprises an active area of the acoustic resonator. The acoustic resonator also comprises a bridge adjacent to a termination of the active area of the acoustic resonator.

Abstract: A solid mount bulk acoustic wave resonator, comprises a first electrode; a second electrode; a piezoelectric layer disposed between the first and second electrodes; and an acoustic reflector comprising a plurality of layers and disposed beneath the first electrode, the second electrode and the piezoelectric layer, An overlap of the acoustic reflector, the first electrode, the second electrode and the piezoelectric layer defines an active area of the acoustic resonator, and the piezoelectric layer extends over an edge of the first electrode. The acoustic resonator also comprises a bridge adjacent to a termination of the active area of the acoustic resonator. The bridge overlaps a portion of the first electrode.

Abstract: A method of forming an acoustic resonator includes forming a seed layer on a first electrode layer, forming a piezoelectric layer directly on a surface of the seed layer, and forming a second electrode layer on the piezoelectric layer. The piezoelectric layer includes multiple crystals of piezoelectric material, and the seed layer causes crystal axis orientations of the crystals to be substantially perpendicular to the surface of the seed layer.

Abstract: An acoustic resonator comprises a first electrode, a second electrode and a piezoelectric layer disposed between the first electrode and the second electrode, and comprising a C-axis having an orientation. A polarization-determining seed layer (PDSL) is disposed beneath the piezoelectric layer, the seed layer comprising a metal-nonmetal compound. A method of fabricating a piezoelectric layer over a substrate comprises forming a first layer of a polarization determining seed layer (PDSL) over the substrate. The method further comprises forming a second layer of the PDSL over the first layer. The method further comprises forming a first layer of a piezoelectric material over the second layer of the PDSL; and forming a second layer of the piezoelectric material over the first layer of the piezoelectric material. The piezoelectric material comprises a compression axis (C-axis) oriented along a first direction.

Abstract: An acoustic resonator comprises a first electrode a second electrode and a piezoelectric layer disposed between the first and second electrodes. The acoustic resonator further comprises a reflective element disposed beneath the first electrode, the second electrode and the piezoelectric layer. An overlap of the reflective element, the first electrode, the second electrode and the piezoelectric layer comprises an active area of the acoustic resonator. The acoustic resonator also comprises a bridge adjacent to a termination of the active area of the acoustic resonator.

Abstract: An acoustic resonator comprises a first electrode and second electrode comprising a plurality of sides. At least one of the sides of the second electrode comprises a cantilevered portion. A piezoelectric layer is disposed between the first and second electrodes. An electrical filter comprises an acoustic resonator.

Abstract: An integrated polysilicon fuse and diode and methods of making the same are provided. The integrated polysilicon fuse and diode combination may be implemented in a programmable cross point fuse array. The integrated polysilicon fuse and diode may be used in a random access memory (RAM) cell. The polysilicon diode may be isolated from a substrate and other devices, use less area on a substrate, and cost less to manufacture compared to other diodes.

Abstract: An integrated polysilicon fuse and diode and methods of making the same are provided. The integrated polysilicon fuse and diode combination may be implemented in a programmable cross point fuse array. The integrated polysilicon fuse and diode may be used in a random access memory (RAM) cell. The polysilicon diode may be isolated from a substrate and other devices, use less area on a substrate, and cost less to manufacture compared to other diodes.