Patents by Inventor Chris Hermanson

Chris Hermanson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Over-mold plastic packaged wide band-gap power transistors and MMICS
    Patent number: 9515011
    Abstract: A transistor package includes a lead frame, a wide band-gap transistor attached to the lead frame, and an over-mold surrounding the lead frame and the wide band-gap transistor. The wide band-gap transistor has a peak output power greater than 150 W when operated at a frequency up to 3.8 GHz. Using an over-mold along with a wide band-gap transistor in the transistor package allows the transistor package to achieve an exceptionally high efficiency, gain, and bandwidth, while keeping the manufacturing cost of the transistor package low.
    Type: Grant
    Filed: May 28, 2014
    Date of Patent: December 6, 2016
    Assignee: Cree, Inc.
    Inventors: Simon Wood, James W. Milligan, Chris Hermanson
  • Over-mold packaging for wide band-gap semiconductor devices
    Patent number: 9472480
    Abstract: A transistor package includes a lead frame and a gallium nitride (GaN) transistor attached to the lead frame. The lead frame and the GaN transistor are surrounded by an over-mold with a glass transition temperature greater than about 135° C. and a flexural modulus less than about 20 GPa. Using an over-mold with a glass transition temperature greater than about 135° C. and a flexural modulus less than about 20 GPa allows the over-mold to handle the heat produced by the GaN transistor while preventing damage to the GaN transistor due to thermal expansion and/or contraction of the over-mold.
    Type: Grant
    Filed: May 28, 2014
    Date of Patent: October 18, 2016
    Assignee: Cree, Inc.
    Inventors: Simon Wood, Chris Hermanson
  • OVER-MOLD PLASTIC PACKAGED WIDE BAND-GAP POWER TRANSISTORS AND MMICS
    Publication number: 20150348886
    Abstract: A transistor package includes a lead frame, a wide band-gap transistor attached to the lead frame, and an over-mold surrounding the lead frame and the wide band-gap transistor. The wide band-gap transistor has a peak output power greater than 150 W when operated at a frequency up to 3.8 GHz. Using an over-mold along with a wide band-gap transistor in the transistor package allows the transistor package to achieve an exceptionally high efficiency, gain, and bandwidth, while keeping the manufacturing cost of the transistor package low.
    Type: Application
    Filed: May 28, 2014
    Publication date: December 3, 2015
    Applicant: Cree, Inc.
    Inventors: Simon Wood, James W. Milligan, Chris Hermanson
  • OVER-MOLD PACKAGING FOR WIDE BAND-GAP SEMICONDUCTOR DEVICES
    Publication number: 20150348885
    Abstract: A transistor package includes a lead frame and a gallium nitride (GaN) transistor attached to the lead frame. The lead frame and the GaN transistor are surrounded by an over-mold with a glass transition temperature greater than about 135° C. and a flexural modulus less than about 20 GPa. Using an over-mold with a glass transition temperature greater than about 135° C. and a flexural modulus less than about 20 GPa allows the over-mold to handle the heat produced by the GaN transistor while preventing damage to the GaN transistor due to thermal expansion and/or contraction of the over-mold.
    Type: Application
    Filed: May 28, 2014
    Publication date: December 3, 2015
    Applicant: Cree, Inc.
    Inventors: Simon Wood, Chris Hermanson