Abstract: A system for performing ozone water treatment comprises a voltage supply circuit and a plasma eductor reactor. The voltage supply circuit includes an H-bridge controller and driver, a transformer, and an output port. The H-bridge controller and driver are configured to switch the electrical polarity of a pair of terminals. A primary of the transformer is connected to the H-bridge driver and controller. A secondary of the transformer connects in parallel with a first capacitor and in series with an inductor and a second capacitor. The output port connects in parallel with the second capacitor. The plasma eductor reactor includes an electric field generator, a flow spreader, and a diffuser. The electric field generator includes a pair of electrodes that generate an electric field. The flow spreader supplies a stream of oxygen. The diffuser supplies a stream of water. The streams of water and oxygen pass through the electric field.

Abstract: A rectifier device (10) comprising a multi-layer epitaxial film (12) and a rectifier and a transistor manufactured in the film (12), wherein the transistor is oriented vertically relative to the plane of the rectifier. The rectifier and transistor are separated by a transition zone of inverted bias. The rectifier is a Schottky barrier rectifier, and the transistor is a JFET. More specifically, the device (1) comprises the film (12), a trench (16), a first region (18) associated with an upper portion of the trench (16), and second region (20) associated with a lower portion. The interface between the p+ material of the second region (20) and the n material of the film (12) creates a p+/n junction. The device (10) has use in high frequency, low-loss power circuit applications in which high switching speed and low forward voltage drop are desirable.

Abstract: A rectifier device (10) comprising a multi-layer epitaxial film (12) and a rectifier and a transistor manufactured in the film (12), wherein the transistor is oriented vertically relative to the plane of the rectifier. The rectifier and transistor are separated by a transition zone of inverted bias. The rectifier is a Schottky barrier rectifier, and the transistor is a JFET. More specifically, the device (1) comprises the film (12), a trench (16), a first region (18) associated with an upper portion of the trench (16), and second region (20) associated with a lower portion. The interface between the p+ material of the second region (20) and the n material of the film (12) creates a p+/n junction. The device (10) has use in high frequency, low-loss power circuit applications in which high switching speed and low forward voltage drop are desirable.