Abstract: An integrated circuit device is provided. The integrated circuit device can include a substrate; a first radiation-sensing element disposed over a first portion of the substrate; and a second radiation-sensing element disposed over a second portion of the substrate. The first portion comprises a first radiation absorption characteristic, and the second portion comprises a second radiation absorption characteristic different from the first radiation absorption characteristic.

Abstract: A backside illuminated sensor includes a semiconductor substrate having a front surface and a back surface, and a plurality of pixels formed on the front surface of the semiconductor substrate. The sensor further includes a plurality of absorption depths formed within the back surface of the semiconductor substrate. Each of the plurality of absorption depths is arranged according to each of the plurality of pixels. A method for forming a backside illuminated includes providing a semiconductor substrate having a front surface and a back surface and forming a first, second, and third pixel on the front surface of the semiconductor substrate. The method further includes forming a first, second, and third thickness within the back surface of the semiconductor substrate, wherein the first, second, and third thickness lies beneath the first, second, and third pixel, respectively.

Abstract: An integrated circuit device is provided. The integrated circuit device can include a substrate; a first radiation-sensing element disposed over a first portion of the substrate; and a second radiation-sensing element disposed over a second portion of the substrate. The first portion comprises a first radiation absorption characteristic, and the second portion comprises a second radiation absorption characteristic different from the first radiation absorption characteristic.

Abstract: A backside illuminated sensor includes a semiconductor substrate having a front surface and a back surface, and a plurality of pixels formed on the front surface of the semiconductor substrate. The sensor further includes a plurality of absorption depths formed within the back surface of the semiconductor substrate. Each of the plurality of absorption depths is arranged according to each of the plurality of pixels. A method for forming a backside illuminated includes providing a semiconductor substrate having a front surface and a back surface and forming a first, second, and third pixel on the front surface of the semiconductor substrate. The method further includes forming a first, second, and third thickness within the back surface of the semiconductor substrate, wherein the first, second, and third thickness lies beneath the first, second, and third pixel, respectively.

Abstract: A method for depositing an undoped silicate glass layer. An undoped silicon glass layer is formed to fill a recessed region in a semiconductor substrate by performing at least three chemical vapor depositions. The recessed region is a trench of a shallow trench isolation, or a gap between a plurality of polysilicon or conductive layers. At each pass, under deposition conditions that are as conventionally defined, this method comprises increasing the number of times of deposition performed on the substrate and decreasing the time of each deposition inside a reaction chamber in order to have the thickness of the undoped silicate glass thinner. In this manner, the gap filling ability is enhanced and void formation is prevented. This method also includes, before each deposition is performed, rotating the semiconductor substrate a given angle in a clockwise or counter-clockwise direction so that by the last deposition, the semiconductor substrate has rotated a total of 360° or a multiple of 360°.

Abstract: A method for depositing an undoped silicate glass layer. An undoped silicon glass layer is formed to fill a recessed region in a semiconductor substrate by performing at least three chemical vapor depositions. The recessed region is a trench of a shallow trench isolation, or a gap between a plurality of polysilicon or conductive layers. At each pass, under deposition conditions that are as conventionally defined, this method comprises increasing the number of times of deposition performed on the substrate and decreasing the time of each deposition inside a reaction chamber in order to have the thickness of the undoped silicate glass thinner. In this manner, the gap filling ability is enhanced and void formation is prevented. This method also includes, before each deposition is performed, rotating the semiconductor substrate a given angle in a clockwise or counter-clockwise direction so that by the last deposition, the semiconductor substrate has rotated a total of 360° or a multiple of 360°.