Abstract: Embodiments of the invention provide a method of plating a copper film on a substrate in an electrochemical plating apparatus. The method includes positioning a substrate in an electrolyte solution, applying a current between the substrate and an anode to generate a current density of between about 10 mA/cm2 and about 40 mA/cm2 on the substrate surface, rotating the, substrate at a rotational speed of between about 20 rpm and about 50 rpm, and plating a copper film having a sheet resistance of less than about 16.5×10−2 Ohms/cm2.

Abstract: A method of measuring a concentration of conductive species in an aqueous system is disclosed. In one embodiment, the method comprises providing an electrochemical cell wherein the electrochemical cell has a cell resistance that varies with a concentration of conductive species and determining a relationship between the cell resistance of the electrochemical cell and the concentration of conductive species. The method further comprises measuring one or more electrochemical parameters of the electrochemical cell and determining a test concentration of conductive species based upon the one or more measured electrochemical parameters. Also disclosed is a system for electroplating a material layer on a substrate.

Abstract: The present invention provides a composition and method for void-free plating of a metal into high aspect ratio features. The plating process is carried out in a plating solution containing metal at a molar concentration of between about 0.4 M and about 0.9 M, an acid at a concentration of between about 4 mg/L and about 40 mg/L, a suppressor at a concentration of between about 2 mL/L and about 15 mL/L, an accelerator at a concentration of between about 1.5 mL/L and about 8 mL/L, and a leveler at a concentration of between about 4 mL/L and about 11 mL/L.