Abstract: A precision laser based method of marking semiconductor wafers, packages, substrates or similar workpieces is provided. The workpieces have articles which may include die, chip scale packages, circuit patterns and the like. The marking occurs in a workpiece marking system and within a designated region relative to an article position. The method includes determining at least one location from which reference data is to be obtained using (a) information from which a location of an article is defined, and (b) a vision model of at least a portion of at least one article. Reference data is obtained to locate a feature on a first side of (a second) workpiece using at least one signal from a first sensor. The method further includes positioning a marking field relative to the workpiece so as to position a laser beam at a marking location on a second side of the workpiece. The positioning is based on the feature location.

Abstract: A precision laser based method of marking semiconductor wafers, packages, substrates or similar workpieces is provided. The workpieces have articles which may include die, chip scale packages, circuit patterns and the like. The marking occurs in a workpiece marking system and within a designated region relative to an article position. The method includes determining at least one location from which reference data is to be obtained using (a) information from which a location of an article is defined, and (b) a vision model of at least a portion of at least one article. Reference data is obtained to locate a feature on a first side of (a second) workpiece using at least one signal from a first sensor. The method further includes positioning a marking field relative to the workpiece so as to position a laser beam at a marking location on a second side of the workpiece. The positioning is based on the feature location.

Abstract: A precision laser based method of marking semiconductor wafers, packages, substrates or similar workpieces is provided. The workpieces have articles which may include die, chip scale packages, circuit patterns and the like. The marking occurs in a workpiece marking system and within a designated region relative to an article position. The method includes determining at least one location from which reference data is to be obtained using (a) information from which a location of an article is defined, and (b) a vision model of at least a portion of at least one article. Reference data is obtained to locate a feature on a first side of (a second) workpiece using at least one signal from a first sensor. The method further includes positioning a marking field relative to the workpiece so as to position a laser beam at a marking location on a second side of the workpiece. The positioning is based on the feature location.

Abstract: A system for semiconductor wafer marking is provided. The system includes: (a) a first positioning subsystem for positioning a laser marking field relative to a wafer, the positioning along a first direction; (b) an alignment vision subsystem; (c) a laser marker including a laser for marking a location within the marking field with a laser marking beam; (d) a calibration program for calibrating at least one subsystem of the system; and (e) a controller. The marking field is substantially smaller than the wafer, and the laser marker includes a scan lens for optically maintaining a spot formed by the beam on the wafer within an acceptable range about the location within the marking field so as to avoid undesirable mark variations associated with wafer sag or other variations in depth within the field.