Patents by Inventor Chris P. Tigges

Chris P. Tigges has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7928375
    Abstract: An array of microfabricated linear Paul-Straubel ion traps can be used for mass spectrometric applications. Each ion trap comprises two parallel inner RF electrodes and two parallel outer DC control electrodes symmetric about a central trap axis and suspended over an opening in a substrate. Neighboring ion traps in the array can share a common outer DC control electrode. The ions confined transversely by an RF quadrupole electric field potential well on the ion trap axis. The array can trap a wide array of ions.
    Type: Grant
    Filed: October 21, 2008
    Date of Patent: April 19, 2011
    Assignee: Sandia Corporation
    Inventors: Michael A. Mangan, Matthew G. Blain, Chris P. Tigges, Kevin L. Linker
  • Patent number: 7697134
    Abstract: A correlation spectrometer can detect a large number of gaseous compounds, or chemical species, with a species-specific mask wheel. In this mode, the spectrometer is optimized for the direct measurement of individual target compounds. Additionally, the spectrometer can measure the transmission spectrum from a given sample of gas. In this mode, infrared light is passed through a gas sample and the infrared transmission signature of the gasses present is recorded and measured using Hadamard encoding techniques. The spectrometer can detect the transmission or emission spectra in any system where multiple species are present in a generally known volume.
    Type: Grant
    Filed: November 6, 2006
    Date of Patent: April 13, 2010
    Assignee: Sandia Corporation
    Inventors: Michael B. Sinclair, Kent B. Pfeifer, Jeb H. Flemming, Gary D. Jones, Chris P. Tigges
  • Patent number: 6827134
    Abstract: A parallel-plate heat pipe is disclosed that utilizes a plurality of evaporator regions at locations where heat sources (e.g. semiconductor chips) are to be provided. A plurality of curvilinear capillary grooves are formed on one or both major inner surfaces of the heat pipe to provide an independent flow of a liquid working fluid to the evaporator regions to optimize heat removal from different-size heat sources and to mitigate the possibility of heat-source shadowing. The parallel-plate heat pipe has applications for heat removal from high-density microelectronics and laptop computers.
    Type: Grant
    Filed: April 30, 2002
    Date of Patent: December 7, 2004
    Assignee: Sandia Corporation
    Inventors: Michael J. Rightley, Douglas R. Adkins, James J. Mulhall, Charles V. Robino, Mark Reece, Paul M. Smith, Chris P. Tigges
  • Patent number: 6774532
    Abstract: A self-powered microthermionic converter having an internal thermal power source integrated into the microthermionic converter. These converters can have high energy-conversion efficiencies over a range of operating temperatures. Microengineering techniques are used to manufacture the converter. The utilization of an internal thermal power source increases potential for mobility and incorporation into small devices. High energy efficiency is obtained by utilization of micron-scale interelectrode gap spacing. Alpha-particle emitting radioisotopes can be used for the internal thermal power source, such as curium and polonium isotopes.
    Type: Grant
    Filed: December 20, 2001
    Date of Patent: August 10, 2004
    Assignee: Sandia Corporation
    Inventors: Albert C. Marshall, Donald B. King, Kevin R. Zavadil, Stanley H. Kravitz, Chris P. Tigges, Gregory A. Vawter
  • Patent number: 6673254
    Abstract: Methods for fabricating a highly effective, micron-scale micro heat barrier structure and process for manufacturing a micro heat barrier based on semiconductor and/or MEMS fabrication techniques. The micro heat barrier has an array of non-metallic, freestanding microsupports with a height less than 100 microns, attached to a substrate. An infrared reflective membrane (e.g., 1 micron gold) can be supported by the array of microsupports to provide radiation shielding. The micro heat barrier can be evacuated to eliminate gas phase heat conduction and convection. Semi-isotropic, reactive ion plasma etching can be used to create a microspike having a cusp-like shape with a sharp, pointed tip (<0.1 micron), to minimize the tip's contact area. A heat source can be placed directly on the microspikes. The micro heat barrier can have an apparent thermal conductivity in the range of 10−6 to 10−7 W/m-K. Multiple layers of reflective membranes can be used to increase thermal resistance.
    Type: Grant
    Filed: December 19, 2001
    Date of Patent: January 6, 2004
    Assignee: Sandia Corporation
    Inventors: Albert C. Marshall, Stanley H. Kravitz, Chris P. Tigges, Gregory A. Vawter
  • Patent number: 6605339
    Abstract: A highly effective, micron-scale micro heat barrier structure and process for manufacturing a micro heat barrier based on semiconductor and/or MEMS fabrication techniques. The micro heat barrier has an array of non-metallic, freestanding microsupports with a height less than 100 microns, attached to a substrate. An infrared reflective membrane (e.g., 1 micron gold) can be supported by the array of microsupports to provide radiation shielding. The micro heat barrier can be evacuated to eliminate gas phase heat conduction and convection. Semi-isotropic, reactive ion plasma etching can be used to create a microspike having a cusp-like shape with a sharp, pointed tip (<0.1 micron), to minimize the tip's contact area. A heat source can be placed directly on the microspikes. The micro heat barrier can have an apparent thermal conductivity in the range of 10−6 to 10−7 W/m-K. Multiple layers of reflective membranes can be used to increase thermal resistance.
    Type: Grant
    Filed: December 19, 2001
    Date of Patent: August 12, 2003
    Assignee: Sandia Corporation
    Inventors: Albert C. Marshall, Stanley H. Kravitz, Chris P. Tigges, Gregory A. Vawter
  • Patent number: 6391393
    Abstract: A method of forming a dual-level memory material using field structured materials. The field structured materials are formed from a dispersion of ferromagnetic particles in a polymerizable liquid medium, such as a urethane acrylate-based photopolymer, which are applied as a film to a support and then exposed in selected portions of the film to an applied magnetic or electric field. The field can be applied either uniaxially or biaxially at field strengths up to 150 G or higher to form the field structured materials. After polymerizing the field-structure materials, a magnetic field can be applied to selected portions of the polymerized field-structured material to yield a dual-level memory material on the support, wherein the dual-level memory material supports read-and-write binary data memory and write once, read many memory.
    Type: Grant
    Filed: February 22, 2001
    Date of Patent: May 21, 2002
    Assignee: Sandia Corporation
    Inventors: James E. Martin, Robert A. Anderson, Chris P. Tigges
  • Patent number: 5358928
    Abstract: A process for formulating non-hysteretic and hysteretic Josephson junctions using HTS materials which results in junctions having the ability to operate at high temperatures while maintaining high uniformity and quality. The non-hysteretic Josephson junction is formed by step-etching a LaAlO.sub.3 crystal substrate and then depositing a thin film of TlCaBaCuO on the substrate, covering the step, and forming a grain boundary at the step and a subsequent Josephson junction. Once the non-hysteretic junction is formed the next step to form the hysteretic Josephson junction is to add capacitance to the system. In the current embodiment, this is accomplished by adding a thin dielectric layer, LaA1O.sub.3, followed by a cap layer of a normal metal where the cap layer is formed by first depositing a thin layer of titanium (Ti) followed by a layer of gold (Au). The dielectric layer and the normal metal cap are patterned to the desired geometry.
    Type: Grant
    Filed: September 22, 1992
    Date of Patent: October 25, 1994
    Assignee: Sandia Corporation
    Inventors: David S. Ginley, Vincent M. Hietala, Gert K. G. Hohenwarter, Jon S. Martens, Thomas A. Plut, Chris P. Tigges, Gregory A. Vawter, Thomas E. Zipperian