Abstract: An environmental seal incorporated into a diffusion furnace having a heated chamber including a rotatable susceptor and integrally formed shaft support. A plurality of silicon wafers are supported on an associated carrier centered upon the turntable and rotated at a selected velocity. The processing chamber is heated to a selected temperature range and, corresponding to a desired (typically subatmospheric pressure) environment established within the interior and the introduction to a desired recipe of gaseous components/dopants, facilitates a wafer material treatment within the furnace. The use of a nonmetallic environmental seal, typically in the form of a spring-loaded rotary seal or multiple O-ring arrangement, prevents the escape of heat or introduction of pressure/particle contaminants into the chamber. One or more mirror surfaces further assist in retarding heat loss.

Abstract: The present invention relates generally to semiconductor fabrication. More particularly, the present invention relates to system and method of selectively oxidizing one material with respect to another material formed on a semiconductor substrate. A hydrogen-rich oxidation system for performing the process are provided in which innovative safety features are included to avoid the dangers to personnel and equipment that are inherent in working with hydrogen-rich atmospheres.

Abstract: The present invention relates generally to semiconductor fabrication. More particularly, the present invention relates to system and method of selectively oxidizing one material with respect to another material formed on a semiconductor substrate. A hydrogen-rich oxidation system for performing the process are provided in which innovative safety features are included to avoid the dangers to personnel and equipment that are inherent in working with hydrogen-rich atmospheres.