Abstract: The present disclosure relates generally to methods for targeted hybrid capture of rearranged T cell receptors. More particularly, some embodiments relate to a method for direct and quantitative, error-corrected counting of genomic sequences for determining immune response gene repertoires.

Abstract: In a measuring system, a method for evaluating parameters of a workpiece includes measuring a periodic structure, such as a grating, on the workpiece to produce image data. An orientation of features in the image data, produced by higher order diffractions from the periodic structure, is identified. An orientation of the periodic structure is determined based on the orientation of the features in the image data. The image data is then modified, based on the orientation of the periodic structure, to correlate with, and for comparison to, simulated image data to ascertain parameters of the workpiece. Alternatively, optical components in the measuring system, or the workpiece itself, are adjusted to provide a desired alignment between the optical components and the periodic structure. A microstructure on the workpiece may then be measured, and the resulting image data may be compared to the simulated image data to ascertain parameters of the microstructure.

Abstract: In a measuring system, a method for evaluating parameters of a workpiece includes measuring a periodic structure, such as a grating, on the workpiece to produce image data. An orientation of features in the image data, produced by higher order diffractions from the periodic structure, is identified. An orientation of the periodic structure is determined based on the orientation of the features in the image data. The image data is then modified, based on the orientation of the periodic structure, to correlate with, and for comparison to, simulated image data to ascertain parameters of the workpiece. Alternatively, optical components in the measuring system, or the workpiece itself, are adjusted to provide a desired alignment between the optical components and the periodic structure. A microstructure on the workpiece may then be measured, and the resulting image data may be compared to the simulated image data to ascertain parameters of the microstructure.

Abstract: In a measuring system, a method for evaluating parameters of a workpiece includes measuring a periodic structure, such as a grating, on the workpiece to produce image data. An orientation of features in the image data, produced by higher order diffractions from the periodic structure, is identified. An orientation of the periodic structure is determined based on the orientation of the features in the image data. The image data is then modified, based on the orientation of the periodic structure, to correlate with, and for comparison to, simulated image data to ascertain parameters of the workpiece. Alternatively, optical components in the measuring system, or the workpiece itself, are adjusted to provide a desired alignment between the optical components and the periodic structure. A microstructure on the workpiece may then be measured, and the resulting image data may be compared to the simulated image data to ascertain parameters of the microstructure.

Abstract: Scatterometers and methods of using scatterometry to determine several parameters of periodic microstructures, pseudo-periodic structures, and other very small structures having features sizes as small as 100 nm or less. Several specific embodiments of the present invention are particularly useful in the semiconductor industry to determine the width, depth, line edge roughness, wall angle, film thickness, and many other parameters of the features formed in microprocessors, memory devices, and other semiconductor devices. The scatterometers and methods of the invention, however, are not limited to semiconductor applications and can be applied equally well in other applications.

Abstract: Scatterometers and methods of using scatterometry to determine several parameters of periodic microstructures, pseudo-periodic structures, and other very small structures having features sizes as small as 100 nm or less. Several specific embodiments of the present invention are particularly useful in the semiconductor industry to determine the width, depth, line edge roughness, wall angle, film thickness, and many other parameters of the features formed in microprocessors, memory devices, and other semiconductor devices. The scatterometers and methods of the invention, however, are not limited to semiconductor applications and can be applied equally well in other applications.

Abstract: Scatterometers and methods of using scatterometry to determine several parameters of periodic microstructures, pseudo-periodic structures, and other very small structures having features sizes as small as 100 nm or less. Several specific embodiments of the present invention are particularly useful in the semiconductor industry to determine the width, depth, line edge roughness, wall angle, film thickness, and many other parameters of the features formed in microprocessors, memory devices, and other semiconductor devices. The scatterometers and methods of the invention, however, are not limited to semiconductor applications and can be applied equally well in other applications.

Abstract: In a measuring system, a method for evaluating parameters of a workpiece includes measuring a periodic structure, such as a grating, on the workpiece to produce image data. An orientation of features in the image data, produced by higher order diffractions from the periodic structure, is identified. An orientation of the periodic structure is determined based on the orientation of the features in the image data. The image data is then modified, based on the orientation of the periodic structure, to correlate with, and for comparison to, simulated image data to ascertain parameters of the workpiece. Alternatively, optical components in the measuring system, or the workpiece itself, are adjusted to provide a desired alignment between the optical components and the periodic structure. A microstructure on the workpiece may then be measured, and the resulting image data may be compared to the simulated image data to ascertain parameters of the microstructure.

Abstract: Scatterometers and methods of using scatterometry to determine several parameters of periodic microstructures, pseudo-periodic structures, and other very small structures having features sizes as small as 100 nm or less. Several specific embodiments of the present invention are particularly useful in the semiconductor industry to determine the width, depth, line edge roughness, wall angle, film thickness, and many other parameters of the features formed in microprocessors, memory devices, and other semiconductor devices. The scatterometers and methods of the invention, however, are not limited to semiconductor applications and can be applied equally well in other applications.

Abstract: Scatterometers and methods of using scatterometry to determine several parameters of periodic microstructures, pseudo-periodic structures, and other very small structures having features sizes as small as 100 nm or less. Several specific embodiments of the present invention are particularly useful in the semiconductor industry to determine the width, depth, line edge roughness, wall angle, film thickness, and many other parameters of the features formed in microprocessors, memory devices, and other semiconductor devices. The scatterometers and methods of the invention, however, are not limited to semiconductor applications and can be applied equally well in other applications.

Abstract: Scatterometers and methods of using scatterometry to determine several parameters of periodic microstructures, pseudo-periodic structures, and other very small structures having features sizes as small as 100 nm or less. Several specific embodiments of the present Invention are particularly useful in the semiconductor industry to determine the width, depth, line edge roughness, wall angle, film thickness, and many other parameters of the features formed in microprocessors, memory devices, and other semiconductor devices. The scatterometers and methods of the invention, however, are not limited to semiconductor applications and can be applied equally well in other applications.

Abstract: Apparatuses and methods for evaluating microstructures on workpieces are disclosed herein. In one embodiment, a scatterometer comprises an irradiation source, an optic member, and an object lens assembly. The irradiation source can be a laser that produces a beam of radiation at a wavelength. The optic member is aligned with the path of the beam and configured to condition the beam (e.g., shape, randomize, select order, diffuse, converge, diverge, collimate, etc.), and the object lens assembly is positioned between the optic member and a workpiece site. The object lens assembly is configured to (a) simultaneously focus the conditioned beam through a plurality of altitude angles to a spot at an object focal plane, (b) receive radiation scattered from a workpiece, and (c) present a distribution of the scattered radiation at a second focal plane. The object lens assembly maintains a sine relationship between the altitude angles and corresponding points on the radiation distribution at the second focal plane.

Abstract: Scatterometers and methods of using scatterometry to determine several parameters of periodic microstructures, pseudo-periodic structures, and other very small structures having features sizes as small as 100 nm or less. Several specific embodiments of the present invention are particularly useful in the semiconductor industry to determine the width, depth, line edge roughness, wall angle, film thickness, and many other parameters of the features formed in microprocessors, memory devices, and other semiconductor devices. The scatterometers and methods of the invention, however, are not limited to semiconductor applications and can be applied equally well in other applications.

Abstract: Scatterometers and methods of using scatterometry to determine several parameters of periodic microstructures, pseudo-periodic structures, and other very small structures having features sizes as small as 100 nm or less. Several specific embodiments of the present invention are particularly useful in the semiconductor industry to determine the width, depth, line edge roughness, wall angle, film thickness, and many other parameters of the features formed in microprocessors, memory devices, and other semiconductor devices. The scatterometers and methods of the invention, however, are not limited to semiconductor applications and can be applied equally well in other applications.

Abstract: Scatterometers and methods of using scatterometry to determine several parameters of periodic microstructures, pseudo-periodic structures, and other very small structures having features sizes as small as 100 nm or less. Several specific embodiments of the present invention are particularly useful in the semiconductor industry to determine the width, depth, line edge roughness, wall angle, film thickness, and many other parameters of the features formed in microprocessors, memory devices, and other semiconductor devices. The scatterometers and methods of the invention, however, are not limited to semiconductor applications and can be applied equally well in other applications.

Abstract: In a method for measuring a dimension or angle of a scattering feature of an optical device, such as a photonic crystal, at least part of the array is irradiated with light. A characteristic of light scattered from the array is detected. A comparison algorithm is run on the detected characteristic of the scattered light. The comparison algorithm provides one or more numerical values indicative of the measured dimension or angle. A system for measuring a dimension or angle of a feature of an optical device includes a light source and optics for focusing light from the light source onto a target area of the optical device. A light detector is positioned to detect scattered light from the target area, with the detected light used to create a measured light characteristic. A computer linked to the light detector performs a comparison algorithm on the measured light characteristic and outputs a numerical value of the dimension or angle measured.

Abstract: Scatterometers and methods of using scatterometry to determine several parameters of periodic microstructures, pseudo-periodic structures, and other very small structures having features sizes as small as 100 nm or less. Several specific embodiments of the present invention are particularly useful in the semiconductor industry to determine the width, depth, line edge roughness, wall angle, film thickness, and many other parameters of the features formed in microprocessors, memory devices, and other semiconductor devices. The scatterometers and methods of the invention, however, are not limited to semiconductor applications and can be applied equally well in other applications.

Abstract: A device for removably securing an object having a detent to a support. The support includes having a receiver to receive a portion of the perimeter of the object including the detent. The receiver may be cup-shaped. The support further includes a deformable tab disposed which is received by the detent. The tab may be disposed on a prong and the detent may be disposed on the perimeter of a well where the well is shaped to receive the prong. When engaged, the tab couples to said detent to removably secure the object to said support. The support also includes an actuator engaging the deformable tab to decouple the tab from said detent. The support may optionally be coupled to a key chain or a tether. In a second aspect of the invention, the support receives a portion of the perimeter of a cigarette lighter to secure the cigarette lighter from child-tampering and accidental ignition.