Patents by Inventor Chris Raymond
Chris Raymond has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220259659Abstract: The present disclosure relates generally to methods for targeted hybrid capture of rearranged T cell receptors. More particularly, some embodiments relate to a method for direct and quantitative, error-corrected counting of genomic sequences for determining immune response gene repertoires.Type: ApplicationFiled: June 18, 2020Publication date: August 18, 2022Inventors: Chris RAYMOND, Jennifer HERNANDEZ, Tristan SHAFFER
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Publication number: 20200410367Abstract: A system for validating models for predicting a client behavior event includes a development module and a validation module. The development module is configured to receive a use case corresponding to the client behavior event and select a subset of variables correlated to the client behavior event. The validation module is configured to select a first model from models that predict client behavior event using the selected subset of variables. The development module selects the first model based on a predicted lift of the first model. The validation module applies the first model to client data acquired subsequent to the selection of the first model. The validation module compares the predicted lift of the first model to an actual lift of the first model as applied to the client data. The validation module selects one of the first model and a different model in response to the comparison.Type: ApplicationFiled: June 30, 2019Publication date: December 31, 2020Inventors: Aaron Andrew BLOMBERG, Mitchel William WEILER, Chris Raymond JENNINGS
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Patent number: 9216411Abstract: A method for inhibiting formation of nitrosamines and an anion exchange resin produced therefrom comprising providing an anion exchange resin with a nitrosating agent and applying an antioxidant to the resin to inhibit formation of nitrosamines on the anion exchange resin.Type: GrantFiled: December 27, 2011Date of Patent: December 22, 2015Assignee: DOW GLOBAL TECHNOLOGIES LLCInventors: Chris Raymond Eicher, Daryl John Gisch
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Patent number: 9138739Abstract: A method for inhibiting formation of nitrosamines and an anion exchange resin produced therefrom comprising providing an anion exchange resin with a nitrosating agent and mixing a cation exchange resin with the anion exchange resin to inhibit formation of nitrosamines on the anion exchange resin.Type: GrantFiled: December 27, 2011Date of Patent: September 22, 2015Assignee: Dow Global Technologies LLCInventors: Chris Raymond Eicher, Daryl John Gisch, Harlan Robert Goltz
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Publication number: 20120172464Abstract: A method for inhibiting formation of nitrosamines and an anion exchange resin produced therefrom comprising providing an anion exchange resin with a nitrosating agent and mixing a cation exchange resin with the anion exchange resin to inhibit formation of nitrosamines on the anion exchange resin.Type: ApplicationFiled: December 27, 2011Publication date: July 5, 2012Inventors: Chris Raymond Eicher, Daryl John Gisch, Harlan Robert Goltz
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Publication number: 20120172463Abstract: A method for inhibiting formation of nitrosamines and an anion exchange resin produced therefrom comprising providing an anion exchange resin with a nitrosating agent and applying an antioxidant to the resin to inhibit formation of nitrosamines on the anion exchange resin.Type: ApplicationFiled: December 27, 2011Publication date: July 5, 2012Inventors: Chris Raymond Eicher, Daryl John Gisch
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Publication number: 20120172465Abstract: An anion exchange resin produced comprising providing an anion exchange resin with a nitrosating agent and applying an antioxidant to the resin to inhibit formation of nitrosamines on the anion exchange resin.Type: ApplicationFiled: December 27, 2011Publication date: July 5, 2012Inventors: Chris Raymond Eicher, Darryl John Gisch
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Patent number: 8027037Abstract: In a measuring system, a method for evaluating parameters of a workpiece includes measuring a periodic structure, such as a grating, on the workpiece to produce image data. An orientation of features in the image data, produced by higher order diffractions from the periodic structure, is identified. An orientation of the periodic structure is determined based on the orientation of the features in the image data. The image data is then modified, based on the orientation of the periodic structure, to correlate with, and for comparison to, simulated image data to ascertain parameters of the workpiece. Alternatively, optical components in the measuring system, or the workpiece itself, are adjusted to provide a desired alignment between the optical components and the periodic structure. A microstructure on the workpiece may then be measured, and the resulting image data may be compared to the simulated image data to ascertain parameters of the microstructure.Type: GrantFiled: January 28, 2010Date of Patent: September 27, 2011Assignee: Nanometrics IncorporatedInventors: Mike Littau, Darren Forman, Chris Raymond, Steven Hummel
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Publication number: 20100135571Abstract: In a measuring system, a method for evaluating parameters of a workpiece includes measuring a periodic structure, such as a grating, on the workpiece to produce image data. An orientation of features in the image data, produced by higher order diffractions from the periodic structure, is identified. An orientation of the periodic structure is determined based on the orientation of the features in the image data. The image data is then modified, based on the orientation of the periodic structure, to correlate with, and for comparison to, simulated image data to ascertain parameters of the workpiece. Alternatively, optical components in the measuring system, or the workpiece itself, are adjusted to provide a desired alignment between the optical components and the periodic structure. A microstructure on the workpiece may then be measured, and the resulting image data may be compared to the simulated image data to ascertain parameters of the microstructure.Type: ApplicationFiled: January 28, 2010Publication date: June 3, 2010Applicant: NANOMETRICS INCORPORATEDInventors: Mike Littau, Darren Forman, Chris Raymond, Steven Hummel
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Patent number: 7656542Abstract: In a measuring system, a method for evaluating parameters of a workpiece includes measuring a periodic structure, such as a grating, on the workpiece to produce image data. An orientation of features in the image data, produced by higher order diffractions from the periodic structure, is identified. An orientation of the periodic structure is determined based on the orientation of the features in the image data. The image data is then modified, based on the orientation of the periodic structure, to correlate with, and for comparison to, simulated image data to ascertain parameters of the workpiece. Alternatively, optical components in the measuring system, or the workpiece itself, are adjusted to provide a desired alignment between the optical components and the periodic structure. A microstructure on the workpiece may then be measured, and the resulting image data may be compared to the simulated image data to ascertain parameters of the microstructure.Type: GrantFiled: March 10, 2006Date of Patent: February 2, 2010Assignee: Nanometrics IncorporatedInventors: Mike Littau, Darren Forman, Chris Raymond, Steven Hummel
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Patent number: 7615752Abstract: Scatterometers and methods of using scatterometry to determine several parameters of periodic microstructures, pseudo-periodic structures, and other very small structures having features sizes as small as 100 nm or less. Several specific embodiments of the present invention are particularly useful in the semiconductor industry to determine the width, depth, line edge roughness, wall angle, film thickness, and many other parameters of the features formed in microprocessors, memory devices, and other semiconductor devices. The scatterometers and methods of the invention, however, are not limited to semiconductor applications and can be applied equally well in other applications.Type: GrantFiled: February 24, 2006Date of Patent: November 10, 2009Assignee: Nanometrics IncorporatedInventors: Chris Raymond, Steve Hummel
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Patent number: 7511293Abstract: Scatterometers and methods of using scatterometry to determine several parameters of periodic microstructures, pseudo-periodic structures, and other very small structures having features sizes as small as 100 nm or less. Several specific embodiments of the present invention are particularly useful in the semiconductor industry to determine the width, depth, line edge roughness, wall angle, film thickness, and many other parameters of the features formed in microprocessors, memory devices, and other semiconductor devices. The scatterometers and methods of the invention, however, are not limited to semiconductor applications and can be applied equally well in other applications.Type: GrantFiled: February 24, 2006Date of Patent: March 31, 2009Assignee: Nanometrics IncorporatedInventors: Chris Raymond, Steve Hummel
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Patent number: 7502101Abstract: Scatterometers and methods of using scatterometry to determine several parameters of periodic microstructures, pseudo-periodic structures, and other very small structures having features sizes as small as 100 nm or less. Several specific embodiments of the present invention are particularly useful in the semiconductor industry to determine the width, depth, line edge roughness, wall angle, film thickness, and many other parameters of the features formed in microprocessors, memory devices, and other semiconductor devices. The scatterometers and methods of the invention, however, are not limited to semiconductor applications and can be applied equally well in other applications.Type: GrantFiled: February 24, 2006Date of Patent: March 10, 2009Assignee: Nanometrics IncorporatedInventors: Chris Raymond, Steve Hummel, Sean Liu
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Publication number: 20070211261Abstract: In a measuring system, a method for evaluating parameters of a workpiece includes measuring a periodic structure, such as a grating, on the workpiece to produce image data. An orientation of features in the image data, produced by higher order diffractions from the periodic structure, is identified. An orientation of the periodic structure is determined based on the orientation of the features in the image data. The image data is then modified, based on the orientation of the periodic structure, to correlate with, and for comparison to, simulated image data to ascertain parameters of the workpiece. Alternatively, optical components in the measuring system, or the workpiece itself, are adjusted to provide a desired alignment between the optical components and the periodic structure. A microstructure on the workpiece may then be measured, and the resulting image data may be compared to the simulated image data to ascertain parameters of the microstructure.Type: ApplicationFiled: March 10, 2006Publication date: September 13, 2007Inventors: Mike Littau, Darren Forman, Chris Raymond, Steven Hummel
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Publication number: 20060289789Abstract: Scatterometers and methods of using scatterometry to determine several parameters of periodic microstructures, pseudo-periodic structures, and other very small structures having features sizes as small as 100 nm or less. Several specific embodiments of the present invention are particularly useful in the semiconductor industry to determine the width, depth, line edge roughness, wall angle, film thickness, and many other parameters of the features formed in microprocessors, memory devices, and other semiconductor devices. The scatterometers and methods of the invention, however, are not limited to semiconductor applications and can be applied equally well in other applications.Type: ApplicationFiled: February 24, 2006Publication date: December 28, 2006Applicant: Accent Optical Technologies, Inc.Inventors: Chris Raymond, Steve Hummel, Sean Liu
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Publication number: 20060289788Abstract: Scatterometers and methods of using scatterometry to determine several parameters of periodic microstructures, pseudo-periodic structures, and other very small structures having features sizes as small as 100 nm or less. Several specific embodiments of the present invention are particularly useful in the semiconductor industry to determine the width, depth, line edge roughness, wall angle, film thickness, and many other parameters of the features formed in microprocessors, memory devices, and other semiconductor devices. The scatterometers and methods of the invention, however, are not limited to semiconductor applications and can be applied equally well in other applications.Type: ApplicationFiled: February 24, 2006Publication date: December 28, 2006Applicant: Accent Optical Technologies, Inc.Inventors: Chris Raymond, Steve Hummel, Sean Liu
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Publication number: 20060289790Abstract: Scatterometers and methods of using scatterometry to determine several parameters of periodic microstructures, pseudo-periodic structures, and other very small structures having features sizes as small as 100 nm or less. Several specific embodiments of the present Invention are particularly useful in the semiconductor industry to determine the width, depth, line edge roughness, wall angle, film thickness, and many other parameters of the features formed in microprocessors, memory devices, and other semiconductor devices. The scatterometers and methods of the invention, however, are not limited to semiconductor applications and can be applied equally well in other applications.Type: ApplicationFiled: February 24, 2006Publication date: December 28, 2006Applicant: Accent Optical Technologies, Inc.Inventors: Chris Raymond, Steve Hummel
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Publication number: 20060285111Abstract: Apparatuses and methods for evaluating microstructures on workpieces are disclosed herein. In one embodiment, a scatterometer comprises an irradiation source, an optic member, and an object lens assembly. The irradiation source can be a laser that produces a beam of radiation at a wavelength. The optic member is aligned with the path of the beam and configured to condition the beam (e.g., shape, randomize, select order, diffuse, converge, diverge, collimate, etc.), and the object lens assembly is positioned between the optic member and a workpiece site. The object lens assembly is configured to (a) simultaneously focus the conditioned beam through a plurality of altitude angles to a spot at an object focal plane, (b) receive radiation scattered from a workpiece, and (c) present a distribution of the scattered radiation at a second focal plane. The object lens assembly maintains a sine relationship between the altitude angles and corresponding points on the radiation distribution at the second focal plane.Type: ApplicationFiled: June 14, 2006Publication date: December 21, 2006Applicant: Accent Optical Technologies, Inc.Inventors: Chris Raymond, Darren Forman
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Publication number: 20060285110Abstract: Scatterometers and methods of using scatterometry to determine several parameters of periodic microstructures, pseudo-periodic structures, and other very small structures having features sizes as small as 100 nm or less. Several specific embodiments of the present invention are particularly useful in the semiconductor industry to determine the width, depth, line edge roughness, wall angle, film thickness, and many other parameters of the features formed in microprocessors, memory devices, and other semiconductor devices. The scatterometers and methods of the invention, however, are not limited to semiconductor applications and can be applied equally well in other applications.Type: ApplicationFiled: February 24, 2006Publication date: December 21, 2006Applicant: Accent Optical Technologies, Inc.Inventors: Chris Raymond, Steve Hummel
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Publication number: 20060278834Abstract: Scatterometers and methods of using scatterometry to determine several parameters of periodic microstructures, pseudo-periodic structures, and other very small structures having features sizes as small as 100 nm or less. Several specific embodiments of the present invention are particularly useful in the semiconductor industry to determine the width, depth, line edge roughness, wall angle, film thickness, and many other parameters of the features formed in microprocessors, memory devices, and other semiconductor devices. The scatterometers and methods of the invention, however, are not limited to semiconductor applications and can be applied equally well in other applications.Type: ApplicationFiled: February 24, 2006Publication date: December 14, 2006Applicant: Accent Optical Technologies, Inc.Inventors: Chris Raymond, Steve Hummel