Abstract: Disclosed herein are methods, systems, and computer program products directed to a guidance engine. The guidance engine is configured to query a knowledge base for guidance with respect to a property of a software application. The guidance engine receives a responsive query from the knowledge base that is based on the property. The responsive query informs a user of the guidance engine how to address a vulnerability within the software application by performing a transform with respect to a property of the software application.

Abstract: Disclosed herein are methods, systems, and computer program products directed to a guidance engine. The guidance engine is configured to query a knowledge base for guidance with respect to a property of a software application. The guidance engine receives a responsive query from the knowledge base that is based on the property. The responsive query informs a user of the guidance engine how to address a vulnerability within the software application by performing a transform with respect to a property of the software application.

Abstract: The present invention relates to certain melanoma-associated oligopeptides that are recognized by CD8-positive cytotoxic T-lymphocytes (CTLs) as peptide antigen and which elicit a CTL-induced lysis and/or apoptosis of tumor cells. The present invention also relates to the use of these melanoma-associated oligopeptides in cancer therapy.

Abstract: A solar cell includes a substrate, a protective layer located over a first surface of the substrate, a first electrode located over a second surface of the substrate, at least one p-type semiconductor absorber layer located over the first electrode, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a second electrode over the n-type semiconductor layer. The p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material, and the second electrode is transparent and electrically conductive. The protective layer has an emissivity greater than 0.25 at a wavelength of 2 ?m, has a reactivity with a selenium-containing gas lower than that of the substrate, and may differ from the first electrode in at least one of composition, thickness, density, emissivity, conductivity or stress state. The emissivity profile of the protective layer may be uniform or non-uniform.

Abstract: A solar cell includes a substrate, a protective layer located over a first surface of the substrate, a first electrode located over a second surface of the substrate, at least one p-type semiconductor absorber layer located over the first electrode, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a second electrode over the n-type semiconductor layer. The p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material, and the second electrode is transparent and electrically conductive. The protective layer has an emissivity greater than 0.25 at a wavelength of 2 ?m, has a reactivity with a selenium-containing gas lower than that of the substrate, and may differ from the first electrode in at least one of composition, thickness, density, emissivity, conductivity or stress state. The emissivity profile of the protective layer may be uniform or non-uniform.

Abstract: A solar cell includes a substrate, a protective layer located over a first surface of the substrate, a first electrode located over a second surface of the substrate, at least one p-type semiconductor absorber layer located over the first electrode, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a second electrode over the n-type semiconductor layer. The p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material, and the second electrode is transparent and electrically conductive. The protective layer has an emissivity greater than 0.25 at a wavelength of 2 ?m, has a reactivity with a selenium-containing gas lower than that of the substrate, and may differ from the first electrode in at least one of composition, thickness, density, emissivity, conductivity or stress state. The emissivity profile of the protective layer may be uniform or non-uniform.

Abstract: A solar cell includes a substrate, a protective layer located over a first surface of the substrate, a first electrode located over a second surface of the substrate, at least one p-type semiconductor absorber layer located over the first electrode, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a second electrode over the n-type semiconductor layer. The p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material, and the second electrode is transparent and electrically conductive. The protective layer has an emissivity greater than 0.25 at a wavelength of 2 ?m, has a reactivity with a selenium-containing gas lower than that of the substrate, and may differ from the first electrode in at least one of composition, thickness, density, emissivity, conductivity or stress state. The emissivity profile of the protective layer may be uniform or non-uniform.

Abstract: A solar cell includes a first electrode located over a substrate, at least one p-type semiconductor absorber layer located over the first electrode, the p-type semiconductor absorber layer comprising a copper indium selenide (CIS) based alloy material, an n-type semiconductor layer located over the p-type semiconductor absorber layer, an insulating aluminum zinc oxide layer located over the n-type semiconductor layer, the insulating aluminum zinc oxide having an aluminum content of 100 ppm to 5000 ppm and a second electrode over the insulating aluminum layer, the second electrode being transparent and electrically conductive. The insulating aluminum zinc oxide having an aluminum content of 100 ppm to 5000 ppm, may be deposited by pulsed DC, non-pulsed DC, or AC sputtering from an aluminum doped zinc oxide having an aluminum content of 100 ppm to 5000 ppm.

Abstract: A solar cell includes a first electrode located over a substrate, at least one p-type semiconductor absorber layer located over the first electrode, the p-type semiconductor absorber layer comprising a copper indium selenide (CIS) based alloy material, an n-type semiconductor layer located over the p-type semiconductor absorber layer, an insulating aluminum zinc oxide layer located over the n-type semiconductor layer, the insulating aluminum zinc oxide having an aluminum content of 100 ppm to 5000 ppm and a second electrode over the insulating aluminum layer, the second electrode being transparent and electrically conductive. The insulating aluminum zinc oxide having an aluminum content of 100 ppm to 5000 ppm, may be deposited by pulsed DC, non-pulsed DC, or AC sputtering from an aluminum doped zinc oxide having an aluminum content of 100 ppm to 5000 ppm.

Abstract: A solar cell includes a substrate, a protective layer located over a first surface of the substrate, a first electrode located over a second surface of the substrate, at least one p-type semiconductor absorber layer located over the first electrode, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a second electrode over the n-type semiconductor layer. The p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material, and the second electrode is transparent and electrically conductive. The protective layer has an emissivity greater than 0.25 at a wavelength of 2 ?m, has a reactivity with a selenium-containing gas lower than that of the substrate, and may differ from the first electrode in at least one of composition, thickness, density, emissivity, conductivity or stress state. The emissivity profile of the protective layer may be uniform or non-uniform.

Abstract: A solar cell includes a substrate, a protective layer located over a first surface of the substrate, a first electrode located over a second surface of the substrate, at least one p-type semiconductor absorber layer located over the first electrode, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a second electrode over the n-type semiconductor layer. The p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material, and the second electrode is transparent and electrically conductive. The protective layer has an emissivity greater than 0.25 at a wavelength of 2 ?m, has a reactivity with a selenium-containing gas lower than that of the substrate, and may differ from the first electrode in at least one of composition, thickness, density, emissivity, conductivity or stress state. The emissivity profile of the protective layer may be uniform or non-uniform.

Abstract: An interactive apparatus that is used in a game. The interactive apparatus is in the form of a stylus and contain a stylus housing and a processor coupled to the stylus housing and a memory unit comprising computer code for playing a game involving a plurality of printed cards and an audio output device and an optical emitter and an optical detector and wherein the audio output device, the memory unit, the optical emitter, and the optical detector are operatively coupled to the processor. The apparatus may scan the cards to enhance an interactive game play.

Abstract: The present invention relates to certain melanoma-associated oligopeptides that are recognized by CD8-positive cytotoxic T-lymphocytes (CTLs) as peptide antigen and which elicit a CTL-induced lysis and/or apoptosis of tumor cells. The present invention also relates to the use of these melanoma-associated oligopeptides in cancer therapy.

Abstract: A plasma display filter includes five metallic layers, such as silver alloy layers, having a combined thickness that exceeds 50 nm. The metallic layers form an alternating pattern with dielectric layers, where the layer in the pattern closest to a supporting substrate is the first of the dielectric layers. Layer thicknesses are selected to achieve a low reflected color shift with changes in the viewing angle, relatively neutral transmitted color properties, and desirable shielding characteristics with respect to infrared and electromagnetic radiation.

Abstract: A computer interface system and method is described which includes a way of interfacing with a physical game system. The game system may include a platform having a plurality of regions and a plurality of lots, a plurality of environmental objects positioned within an associated lot of the platform, and a movable object near at least one region. Additionally, each environmental object has an environmental identifier and is a global type or a local type, and each region has a region identifier and a plurality of subregions. The method includes the act of scanning the environmental objects and the movable object to extract data, where the extracted data includes a movable object position of the movable object and an environmental position for each environmental object and associated environmental identifier.

Abstract: The present invention comprises an innovative gate oxidation process after the disposition of the gate and prior to the disposition of the source and the drain by exposing the gate to oxygen at a predetermined temperature and for a predetermined time period for the optimized transistor performance. During the innovative gate oxidation process, oxygen penetrates into the interfaces of the gate conductive layer gate oxide and the gate dielectric layer silicon substrate and oxidizes portions of the gate conductive layer at the interfaces due to the oxygen smiling or the bird beak effect, which results in an increased effective thickness of the gate dielectric layer. Optionally, HCl can be introduced at a predetermined flowrate during the innovative gate oxidation process.

Abstract: A method of communication handover from a first communication entity (33) to a second communication entity (43) in a communication system (10) where a communication unit (80), communicating with a transceiver (23) associated with the second communication entity, is linked to the first communication entity. The invention provides for establishing a communication link between the communication unit and the second communication entity while maintaining a communication link between the communication unit and the first communication entitiy. Then, communications are substantially simultaneously transfered to the second communication entity while terminated from the first communication entity.

Abstract: A memory cell for a programmable logic device (PLD) and method for programming the memory cell. The memory cell includes components typically found in a memory cell for a PLD including an NMOS transistor having a floating gate, and two capacitors coupled to the floating gate, one capacitor being a tunneling capacitor enabling charge to be added to and removed from the floating gate. The memory cell further includes an NMOS pass gate transistor for supplying charge to the tunneling capacitor, but unlike conventional NMOS pass gates, it has a reduced threshold so that during programming when a programming voltage is applied to its drain, it can be turned on with an identical programming voltage applied to its gate, rather than requiring that its gate voltage be pumped above its drain voltage during programming. The reduced threshold can be obtained by removing the vt implant and punch through implant normally provided in its channel, or by other means.