Patents by Inventor Chris Steely
Chris Steely has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11862524Abstract: The present disclosure provides a target and a method of performing overlay measurements on a target. The target includes an array of cells comprising a first cell, a second cell, a third cell, and a fourth cell. Each cell includes a periodic structure with a pitch. The periodic structure includes a first section and a second section, separated by a first gap. The target further includes an electron beam overlay target, such that electron beam overlay measurements, advanced imaging metrology, and/or scatterometry measurements can be performed on the target.Type: GrantFiled: September 28, 2021Date of Patent: January 2, 2024Inventors: Inna Steely-Tarshish, Stefan Eyring, Mark Ghinovker, Yoel Feler, Eitan Hajaj, Ulrich Pohlmann, Nadav Gutman, Chris Steely, Raviv Yohanan, Ira Naot
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Publication number: 20230324810Abstract: Electron beam overlay targets and method of performing overlay measurements on a target using a semiconductor metrology tool are provided. One target includes a plurality of electron beam overlay elements and a plurality of two-dimensional elements that provide at least one two-dimensional imaging. The plurality of two dimensional elements are an array of evenly-spaced polygonal gratings across at least three rows and at least three columns. Another target includes a plurality of electron beam overlay elements and a plurality of AIMid elements. Each of the electron beam overlay elements includes at least two gratings that are overlaid at a perpendicular orientation to each other. The plurality of AIMid elements includes at least two gratings that are overlaid at a perpendicular orientation to each other.Type: ApplicationFiled: June 1, 2023Publication date: October 12, 2023Inventors: Inna Steely-Tarshish, Stefan Eyring, Mark Ghinovker, Yoel Feler, Eitan Hajaj, Ulrich Pohlmann, Nadav Gutman, Chris Steely, Raviv Yohanan, Ira Naot
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Patent number: 11720031Abstract: Combined electron beam overlay and scatterometry overlay targets include first and second periodic structures with gratings. Gratings in the second periodic structure can be positioned under the gratings of the first periodic structure or can be positioned between the gratings of the first periodic structure. These overlay targets can be used in semiconductor manufacturing.Type: GrantFiled: September 28, 2021Date of Patent: August 8, 2023Assignee: KLA CorporationInventors: Inna Steely-Tarshish, Stefan Eyring, Mark Ghinovker, Yoel Feler, Eitan Hajaj, Ulrich Pohlmann, Nadav Gutman, Chris Steely, Raviv Yohanan, Ira Naot
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Patent number: 11703767Abstract: Electron beam overlay targets and method of performing overlay measurements on a target using a semiconductor metrology tool are provided. One target includes a plurality of electron beam overlay elements and a plurality of two-dimensional elements that provide at least one two-dimensional imaging. The plurality of two dimensional elements are an array of evenly-spaced polygonal gratings across at least three rows and at least three columns. Another target includes a plurality of electron beam overlay elements and a plurality of AIMid elements. Each of the electron beam overlay elements includes at least two gratings that are overlaid at a perpendicular orientation to each other. The plurality of AIMid elements includes at least two gratings that are overlaid at a perpendicular orientation to each other.Type: GrantFiled: September 28, 2021Date of Patent: July 18, 2023Inventors: Inna Steely-Tarshish, Stefan Eyring, Mark Ghinovker, Yoel Feier, Eitan Hajaj, Ulrich Pohlmann, Nadav Gutman, Chris Steely, Raviv Yohanan, Ira Naot
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Publication number: 20220413394Abstract: Combined electron beam overlay and scatterometry overlay targets include first and second periodic structures with gratings. Gratings in the second periodic structure can be positioned under the gratings of the first periodic structure or can be positioned between the gratings of the first periodic structure. These overlay targets can be used in semiconductor manufacturing.Type: ApplicationFiled: September 28, 2021Publication date: December 29, 2022Inventors: Inna Steely-Tarshish, Stefan Eyring, Mark Ghinovker, Yoel Feler, Eitan Hajaj, Ulrich Pohlmann, Nadav Gutman, Chris Steely, Raviv Yohanan, Ira Naot
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Publication number: 20220415725Abstract: The present disclosure provides a target and a method of performing overlay measurements on a target. The target includes an array of cells comprising a first cell, a second cell, a third cell, and a fourth cell. Each cell includes a periodic structure with a pitch. The periodic structure includes a first section and a second section, separated by a first gap. The target further includes an electron beam overlay target, such that electron beam overlay measurements, advanced imaging metrology, and/or scatterometry measurements can be performed on the target.Type: ApplicationFiled: September 28, 2021Publication date: December 29, 2022Inventors: Inna Steely-Tarshish, Stefan Eyring, Mark Ghinovker, Yoel Feler, Eitan Hajaj, Ulrich Pohlmann, Nadav Gutman, Chris Steely, Raviv Yohanan, Ira Naot
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Publication number: 20220413395Abstract: Electron beam overlay targets and method of performing overlay measurements on a target using a semiconductor metrology tool are provided. One target includes a plurality of electron beam overlay elements and a plurality of two-dimensional elements that provide at least one two-dimensional imaging. The plurality of two dimensional elements are an array of evenly-spaced polygonal gratings across at least three rows and at least three columns. Another target includes a plurality of electron beam overlay elements and a plurality of AIMid elements. Each of the electron beam overlay elements includes at least two gratings that are overlaid at a perpendicular orientation to each other. The plurality of AIMid elements includes at least two gratings that are overlaid at a perpendicular orientation to each other.Type: ApplicationFiled: September 28, 2021Publication date: December 29, 2022Inventors: Inna Steely-Tarshish, Stefan Eyring, Mark Ghinovker, Yoel Feler, Eitan Hajaj, Ulrich Pohlmann, Nadav Gutman, Chris Steely, Raviv Yohanan, Ira Naot
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Patent number: 11467503Abstract: A metrology system may include a controller to receive a first metrology dataset associated with a first set of metrology target features on a sample including first features from a first exposure field on a first sample layer and second features from a second exposure field on a second sample layer, where the second exposure field partially overlaps the first exposure field. The controller may further receive a second metrology dataset associated with a second set of metrology target features including third features from a third exposure field on the second layer that overlaps the first exposure field and fourth features formed from a fourth exposure field on the first layer of the sample that overlaps the second exposure field. The controller may further determine fabrication errors based on the first and second metrology datasets and generate correctables to adjust a lithography tool based on the fabrication errors.Type: GrantFiled: March 12, 2021Date of Patent: October 11, 2022Assignee: KLA CorporationInventors: Enna Leshinsky-Altshuller, Inna Tarshish-Shapir, Mark Ghinovker, Diana Shaphirov, Guy Ben Dov, Roie Volkovich, Chris Steely
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Publication number: 20210200105Abstract: A metrology system may include a controller to receive a first metrology dataset associated with a first set of metrology target features on a sample including first features from a first exposure field on a first sample layer and second features from a second exposure field on a second sample layer, where the second exposure field partially overlaps the first exposure field. The controller may further receive a second metrology dataset associated with a second set of metrology target features including third features from a third exposure field on the second layer that overlaps the first exposure field and fourth features formed from a fourth exposure field on the first layer of the sample that overlaps the second exposure field. The controller may further determine fabrication errors based on the first and second metrology datasets and generate correctables to adjust a lithography tool based on the fabrication errors.Type: ApplicationFiled: March 12, 2021Publication date: July 1, 2021Inventors: Enna Leshinsky-Altshuller, Inna Tarshish-Shapir, Mark Ghinovker, Diana Shaphirov, Guy Ben Dov, Roie Volkovich, Chris Steely
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Patent number: 10990022Abstract: A metrology system may include a controller coupled to a metrology tool. The controller may receive a metrology target design including at least a first feature formed by exposing a first exposure field on a sample with a lithography tool, and at least a second feature formed by exposing a second exposure field on the sample with the lithography tool, where the second exposure field overlaps the first exposure field at a location of a metrology target on the sample. The controller may further receive metrology data associated with the metrology target fabricated according to the metrology target design, determine one or more fabrication errors during fabrication of the metrology target based on the metrology data, and generate correctables to adjust one or more fabrication parameters of the lithography tool in one or more subsequent lithography steps based on the one or more fabrication errors.Type: GrantFiled: November 8, 2019Date of Patent: April 27, 2021Assignee: KLA CorporationInventors: Enna Leshinsky-Altshuller, Inna Tarshish-Shapir, Mark Ghinovker, Diana Shaphirov, Guy Ben Dov, Roie Volkovich, Chris Steely
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Publication number: 20200201193Abstract: A metrology system may include a controller coupled to a metrology tool. The controller may receive a metrology target design including at least a first feature formed by exposing a first exposure field on a sample with a lithography tool, and at least a second feature formed by exposing a second exposure field on the sample with the lithography tool, where the second exposure field overlaps the first exposure field at a location of a metrology target on the sample. The controller may further receive metrology data associated with the metrology target fabricated according to the metrology target design, determine one or more fabrication errors during fabrication of the metrology target based on the metrology data, and generate correctables to adjust one or more fabrication parameters of the lithography tool in one or more subsequent lithography steps based on the one or more fabrication errors.Type: ApplicationFiled: November 8, 2019Publication date: June 25, 2020Inventors: Enna Leshinsky-Altshuller, Inna Tarshish-Shapir, Mark Ghinovker, Diana Shaphirov, Guy Ben Dov, Roie Volkovich, Chris Steely