Abstract: An active interface device including a transducer or sensor array having a plurality of transducers or sensors arranged to transform a cell activity into an electrical signal, at least one detection unit for detecting the electrical signal(s), at least one recording unit for recording the electrical signal(s), comprising a plurality of recording channels arranged for being routed to the transducers or sensors, and at least one control unit. The control unit is arranged for addressing the transducers or sensors to the detection unit(s), for activating transducers or sensors, and for routing the recording channels to activated transducers or sensors.

Abstract: The present invention is related to a method for masked anodization of an anodizable layer on a substrate, for example an aluminum layer present on a sacrificial layer, wherein the sacrificial layer needs to be removed from a cavity comprising a Micro or Nano Electromechanical System (MEMS or NEMS). Anodization of an Al layer leads to the formation of elongate pores, through which the sacrificial layer can be removed. According to the method of the invention, the anodization of the Al layer is done with the help of a first mask which defines the area to be anodized, and a second mask which defines a second area to be anodized, said second area surrounding the first area. Anodization of the areas defined by the first and second mask leads to the formation of an anodized structure in the form of a closed ring around the first area, which forms a barrier against unwanted lateral anodization in the first area.

Abstract: The current invention provides a stepping actuator, achieving large range up to ±35 ?m with low operating voltages of 15V or lower and large output forces of up to ±110 ?N. The actuator has an in-plane-angular deflection conversion which allows achieving step sizes varying from few nanometers to few micrometers with a minor change in the design. According to certain embodiments of the invention, the stepping actuator comprises a geometrical structure with a displacement magnification ratio of between 0.15 and 2 at operating voltages of 15V or lower. The present invention also provides a method for forming such stepping actuators.

Abstract: A method for manufacturing thermopile carrier chips comprises forming first type thermocouple legs and second type thermocouple legs on a first surface of a substrate and afterwards removing part of the substrate form a second surface opposite to the first surface, thereby forming a carrier frame from the substrate and at least partially releasing the thermocouple legs from the substrate, wherein the thermocouple legs are attached between parts of the carrier frame. First type thermocouple legs and second type thermocouple legs may be formed on the same substrate or on a separate substrate. In the latter approach both types of thermocouple legs may be optimised independently. The thermocouple legs may be self-supporting or they may be supported by a thin membrane layer. After mounting the thermopile carrier chips in a thermopile unit or in a thermoelectric generator, the sides of the carrier frame to which no thermocouple legs are attached are removed.

Abstract: An active interface device including a transducer or sensor array having a plurality of transducers or sensors arranged to transform a cell activity into an electrical signal, at least one detection unit for detecting the electrical signal(s), at least one recording unit for recording the electrical signal(s), comprising a plurality of recording channels arranged for being routed to the transducers or sensors, and at least one control unit. The control unit is arranged for addressing the transducers or sensors to the detection unit(s), for activating transducers or sensors, and for routing the recording channels to activated transducers or sensors.

Abstract: Manufacturing a semiconductor device involves forming (200) a sacrificial layer where a micro cavity is to be located, forming (210) a metal layer of thickness greater than 1 micron over the sacrificial layer, forming (220) a porous layer from the metal layer, the porous layer having pores of length greater than ten times their breadth, and having a breadth in the range 10 nm-500 nanometers. The pores can be created by anodising, electrodeposition or dealloying. Then the sacrificial layer can be removed (230) through the porous layer, to form the micro cavity, and pores can be sealed (240). Encapsulating MEMS devices with a porous layer can reduce costs by avoiding using photolithography for shaping the access holes since the sacrificial layer is removed through the porous membrane.

Abstract: The present invention provides a Vestibular Evoked Myogenic Potential monitoring system comprising an autonomous integrated system. The integrated system comprises an output being arranged for transferring a stimulation signal via an actuator to an equilibrium organ of a person, a processing and controlling block having an integrated radio and antenna, and an array of electrodes being attachable in the vicinity of at least one muscle of said person and being arranged for recording the responsive signal and for transferring this signal to the processing and controlling block. The processing and controlling block of the integrated system is arranged for generating a stimulus, for storing and processing the recorded signals, and for sending the processed data via a WL link to a processor.

Abstract: Manufacturing a semiconductor device involves forming (200) a sacrificial layer where a micro cavity is to be located, forming (210) a metal layer of thickness greater than 1 micron over the sacrificial layer, forming (220) a porous layer from the metal layer, the porous layer having pores of length greater than ten times their breadth, and having a breadth in the range 10 nm-500 nanometers. The pores can be created by anodising, electrodeposition or dealloying. Then the sacrificial layer can be removed (230) through the porous layer, to form the micro cavity, and pores can be sealed (240). Encapsulating MEMS devices with a porous layer can reduce costs by avoiding using photolithography for shaping the access holes since the sacrificial layer is removed through the porous membrane.

Abstract: In the present disclosure a device for sensing and/or actuation purposes is presented in which microstructures (20) comprising shafts (2) with different functionality and dimensions can be inserted in a modular way. That way, out-of-plane connectivity, mechanical clamping between the microstructures (20) and a substrate (1) of the device, and electrical connection between electrodes (5) on the microstructures (20) and the substrate (1) can be realized. Connections to external circuitry can be realised. Microfluidic channels (10) in the microstructures (20) can be connected to external equipment. A method to fabricate and assemble the device is provided.

Abstract: A thermoelectric generator (TEG) and a method of fabricating the TEG are described. The TEG is designed so that parasitic thermal resistance of air and height of legs of thermocouples forming a thermopile can be varied and optimized independently. The TEG includes a micromachined thermopile sandwiched in between a hot and a cold plate and at least one spacer in between the thermopile and the hot and/or cold plate. The TEG fabrication includes fabricating the thermopiles, a rim, and the cold plate.

Abstract: In the present disclosure a device for sensing and/or actuation purposes is presented in which microstructures (20) comprising shafts (2) with different functionality and dimensions can be inserted in a modular way. That way, out-of-plane connectivity, mechanical clamping between the microstructures (20) and a substrate (1) of the device, and electrical connection between electrodes (5) on the microstructures (20) and the substrate (1) can be realized. Connections to external circuitry can be realised. Microfluidic channels (10) in the microstructures (20) can be connected to external equipment. A method to fabricate and assemble the device is provided.

Abstract: The current invention provides a stepping actuator, achieving large range up to ±35 ?m with low operating voltages of 15V or lower and large output forces of up to ±110 ?N. The actuator has an in-plane-angular deflection conversion which allows achieving step sizes varying from few nanometers to few micrometers with a minor change in the design. According to certain embodiments of the invention, the stepping actuator comprises a geometrical structure with a displacement magnification ratio of between 0.15 and 2 at operating voltages of 15V or lower. The present invention also provides a method for forming such stepping actuators.

Abstract: A method for manufacturing thermopile carrier chips comprises forming first type thermocouple legs and second type thermocouple legs on a first surface of a substrate and afterwards removing part of the substrate form a second surface opposite to the first surface, thereby forming a carrier frame from the substrate and at least partially releasing the thermocouple legs from the substrate, wherein the thermocouple legs are attached between parts of the carrier frame. First type thermocouple legs and second type thermocouple lets may be formed on the same substrate or on a separate substrate. In the latter approach both types of thermocouple legs may be optimised independently. The thermocouple legs may be self-supporting or they may be supported by a thin membrane layer. After mounting the thermopile carrier chips in a thermopile unit or in a thermoelectric generator, the sides of the carrier frame to which no thermocouple legs are attached are removed.

Abstract: Manufacturing a semiconductor device involves forming (200) a sacrificial layer where a micro cavity is to be located, forming (210) a metal layer of thickness greater than 1 micron over the sacrificial layer, forming (220) a porous layer from the metal layer, the porous layer having pores of length greater than ten times their breadth, and having a breadth in the range 10 nm-500 nanometers. The pores can be created by anodising, electrodeposition or dealloying. Then the sacrificial layer can be removed (230) through the porous layer, to form the micro cavity, and pores can be sealed (240). Encapsulating MEMS devices with a porous layer can reduce costs by avoiding using photolithography for shaping the access holes since the sacrificial layer is removed through the porous membrane.

Abstract: Structures and methods are disclosed to produce mechanical strength in Micro Electro Mechanical Systems by increasing the moment of inertia of some of the composing elements. In one aspect, a thermal sensor with improved mechanical strength, thermal insulation and time constant is achieved. Moreover, the current method and apparatus is advantageous in terms of process time and process cost, particularly in the area of lithographic patterning.

Abstract: A device for emitting radiation at a predetermined wavelength is disclosed. The device has a cavity comprising a first bulk region and a second bulk region of opposite conductivity type wherein a barrier is provided for spatially separating the charge carriers of the first and the second region substantially at the antinode of the standing wave pattern of said cavity. The recombination of the charge carriers at the barrier create radiation, the emission wavelength of the radiation being determined by the cavity.

Abstract: Structures and methods are disclosed to produce mechanical strength in Micro Electro Mechanical Systems by increasing the moment of inertia of some of the composing elements. In one aspect, a thermal sensor with improved mechanical strength, thermal insulation and time constant is achieved. Moreover, the current method and apparatus is advantageous in terms of process time and process cost, particularly in the area of lithographic patterning.

Abstract: A device for emitting radiation at a predetermined wavelength is disclosed. The device has a cavity comprising a first bulk region and a second bulk region of opposite conductivity type wherein a barrier is provided for spatially separating the charge carriers of the first and the second region substantially at the antinode of the standing wave pattern of said cavity. The recombination of the charge carriers at the barrier create radiation, the emission wavelength of the radiation being determined by the cavity.

Abstract: A device for emitting radiation it a predetermined wavelength is disclosed. The device has a cavity comprising a first bulk region and a second bulk region of opposite conductivity type wherein a barrier is provided for spatially separating the charge carriers of the first and the second region substantially at the antinode of the standing wave pattern of said cavity. The recombination of the charge carriers at the barrier create radiation, the emission wavelength of the radiation being determined by the cavity.