Patents by Inventor Chris W. Ebert

Chris W. Ebert has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11957893
    Abstract: A neuromodulation therapy is delivered via at least one electrode implanted subcutaneously and superficially to a fascia layer superficial to a nerve of a patient. In one example, an implantable medical device is deployed along a superficial surface of a deep fascia tissue layer superficial to a nerve of a patient. Electrical stimulation energy is delivered to the nerve through the deep fascia tissue layer via implantable medical device electrodes.
    Type: Grant
    Filed: August 25, 2020
    Date of Patent: April 16, 2024
    Assignee: Medtronic, Inc.
    Inventors: Brad C. Tischendorf, John E. Kast, Thomas P. Miltich, Gordon O. Munns, Randy S. Roles, Craig L. Schmidt, Joseph J. Viavattine, Christian S. Nielsen, Prabhakar A. Tamirisa, Anthony M. Chasensky, Markus W. Reiterer, Chris J. Paidosh, Reginald D. Robinson, Bernard Q. Li, Erik R. Scott, Phillip C. Falkner, Xuan K. Wei, Eric H. Bonde, David A. Dinsmoor, Duane L. Bourget, Forrest C M Pape, Gabriela C. Molnar, Joel A. Anderson, Michael J. Ebert, Richard T. Stone, Shawn C. Kelley, Stephen J. Roddy, Timothy J. Denison, Todd V. Smith
  • Patent number: 11957894
    Abstract: A neuromodulation therapy is delivered via at least one electrode implanted subcutaneously and superficially to a fascia layer superficial to a nerve of a patient. In one example, an implantable medical device is deployed along a superficial surface of a deep fascia tissue layer superficial to a nerve of a patient. Electrical stimulation energy is delivered to the nerve through the deep fascia tissue layer via implantable medical device electrodes.
    Type: Grant
    Filed: August 25, 2020
    Date of Patent: April 16, 2024
    Assignee: Medtronic, Inc.
    Inventors: Anthony M. Chasensky, Bernard Q. Li, Brad C. Tischendorf, Chris J. Paidosh, Christian S. Nielsen, Craig L. Schmidt, David A. Dinsmoor, Duane L. Bourget, Eric H. Bonde, Erik R. Scott, Forrest C M Pape, Gabriela C. Molnar, Gordon O. Munns, Joel A. Anderson, John E. Kast, Joseph J. Viavattine, Markus W. Reiterer, Michael J. Ebert, Phillip C. Falkner, Prabhakar A. Tamirisa, Randy S. Roles, Reginald D. Robinson, Richard T. Stone, Shawn C. Kelley, Stephen J. Roddy, Thomas P. Miltich, Timothy J. Denison, Todd V. Smith, Xuan K. Wei
  • Patent number: 6245144
    Abstract: A method of controlling the relative amounts of silicon dopant inside and outside of an enhanced growth region on an indium phosphide substrate using a metalorganic chemical vapor deposition (MOCVD) process. The method includes the steps of positioning the indium phosphide substrate in a reactor chamber, and defining an enhanced growth region on the substrate by depositing a dielectric mask on the substrate. The indium phosphide substrate is heated to a growth temperature of between about 600 and 630° C., and the pressure in the reactor chamber is adjusted to between about 40 and 80 Torr. A first gas contains a metalorganic compound comprising indium and a hydrogen carrier gas flow of between about 12 and 16 liters/minute, and a second gas containing a phosphide and a doping gas containing a silicon dopant at a flow rate of between are introduced into the reactor chamber.
    Type: Grant
    Filed: December 6, 1999
    Date of Patent: June 12, 2001
    Assignee: Lucent Technologies Inc.
    Inventors: Thomas C. Bitner, Chris W. Ebert, Michael Geva, Charles H. Joyner
  • Patent number: 6159758
    Abstract: A method of producing a batch of MQW lasers from a plurality of wafers having doping concentrations within a concentration range. The MQW lasers are produced by epitaxially growing an InGaAsP quaternary layer on the substrates in a metal-organic chemical vapor deposition (MOCVD) reactor. The method includes the steps of segregating the substrates into groups based upon the substrate doping concentrations and batch producing the lasers at specific target wavelengths for each segregated substrate group.
    Type: Grant
    Filed: July 9, 1999
    Date of Patent: December 12, 2000
    Assignee: Lucent Technologies Inc.
    Inventors: Chris W. Ebert, Mary L. Gray, Karen A. Grim-Bogdan, Joseph Brian Seiler, Nikolaos Tzafaras
  • Patent number: 4448612
    Abstract: A gaseous mixture of nitrogen and water vapor (dew point of about -8.degree. to 32.degree. C.), heated to 550.degree. to 750.degree. C., contacts the surfaces of a steel part for a sufficient time to produce adherent, deep-black layers on the part. Steel aperture masks and support frames for color television picture tubes may be blackened by the novel method.
    Type: Grant
    Filed: May 3, 1983
    Date of Patent: May 15, 1984
    Assignee: RCA Corporation
    Inventors: Chris W. Ebert, Earle S. Thall