Patents by Inventor Christa Kunzel

Christa Kunzel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20060050373
    Abstract: This invention relates to a probe for an optical near field microscope, said probe comprising a probe tip which is formed on a self-supporting carrier and to a method for producing the same. One object of this invention is to provide a probe for an optical near field microscope and a method of producing the same, whereby the probe has a probe tip with a very small aperture diameter and thus can be reproducibly manufactured in a simple, advantageously controllable method. This object is solved with regard to the probe by a generic probe which is characterised in that the probe tip is embodied as a complete structure which is applied to a planar surface of the carrier.
    Type: Application
    Filed: July 29, 2005
    Publication date: March 9, 2006
    Applicant: Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V.
    Inventors: Albrecht Brandenburg, Christa Kunzel, Dietmar Eberhard
  • Patent number: 6815244
    Abstract: A method produces a thermoelectric layer structure on a substrate and the thermoelectric layer structure has at least one electrically anisotropically conductive V-VI layer, in particular a (Bi, Sb)2 (Te, Se)3 layer. The V-VI layer is formed by use of a seed layer or by a structure formed in the substrate, and disposed relative to the substrate such that an angle between the direction of the highest conductivity of the V-VI layer and the substrate is greater than 0°. The orientation can also be effected by an electric field. Components are formed of the thermoelectric layer structure in which the angle between the direction of the highest conductivity of the V-VI layer and the substrate is greater than 0°. As a result, the known anisotropy of the V-VI materials can advantageously be used for the construction of components.
    Type: Grant
    Filed: June 27, 2003
    Date of Patent: November 9, 2004
    Assignee: Infineon Technologies AG
    Inventors: Harald Böttner, Axel Schubert, Joachim Nurnus, Christa Künzel
  • Publication number: 20040102051
    Abstract: A method produces a thermoelectric layer structure on a substrate and the thermoelectric layer structure has at least one electrically anisotropically conductive V-VI layer, in particular a (Bi, Sb)2 (Te, Se)3 layer. The V-VI layer is formed by use of a seed layer or by a structure formed in the substrate, and disposed relative to the substrate such that an angle between the direction of the highest conductivity of the V-VI layer and the substrate is greater than 0°. The orientation can also be effected by an electric field. Components are formed of the thermoelectric layer structure in which the angle between the direction of the highest conductivity of the V-VI layer and the substrate is greater than 0°. As a result, the known anisotropy of the V-VI materials can advantageously be used for the construction of components.
    Type: Application
    Filed: June 27, 2003
    Publication date: May 27, 2004
    Inventors: Harald Bottner, Axel Schubert, Joachim Nurnus, Christa Kunzel