Abstract: A sensor assembly comprising a sensing element with at least one electrical lead extending therefrom. A tube encloses the sensing element and material surrounds the at least one electrical lead and defines a space around the at least one electrical lead so that when temperature gradients create push and pull, the at least one electrical lead moves within the space. The sensor assembly may further comprise a sleeve connected to the tube and surrounding the material. The sleeve may have an intermediate bent portion that the at least one electrical lead passes through, with a braided supply line connected to the leads, the braided supply line being arranged and configured within the bent portion to absorb movement of the two leads from temperature gradients. The lead can also extend through the sleeve forming a sinusoidal shape within the sleeve for absorbing movement resulting from temperature gradients.

Abstract: A sensing element for a temperature sensor including a base with a platinum meander applied thereto. An alumina diffusion barrier (ADB) covers the meander to provide protection against contamination and structural stabilization, wherein the alumina diffusion barrier is a contiguous polycrystalline layer fabricated from alumina and approximately 1% by weight of a rutile additive to be substantially devoid of network porosity. The contiguous polycrystalline layer includes grains with a typical grain size being in a range of 0.5-3 ?m. A method for fabricating an alumina diffusion barrier includes the steps of: combining a nano-alumina and nano-rutile powder to create a formulation; applying the formulation to the platinum meander to form a layer; and sintering the layer to create a contiguous polycrystalline layer covering the platinum meander.

Abstract: A method is provided for calculating a performance of a photovoltaic module comprising at least a first photovoltaic cell and a second photovoltaic cell. The method comprises calculating a heat flow between the first photovoltaic cell and the second photovoltaic cell using a first thermal equivalent circuit of the first photovoltaic cell and a second thermal equivalent circuit of the second photovoltaic cell, wherein at least one node of the first thermal equivalent circuit is connected to a corresponding node of the second thermal equivalent circuit by a thermal coupling resistance. The method may be used for calculating the influence of spatial and temporal variations in the operation conditions on the performance, such as the energy yield, of a photovoltaic module or a photovoltaic system.

Abstract: A sensing element for a temperature sensor including a base with a platinum meander applied thereto. An alumina diffusion barrier (ADB) covers the meander to provide protection against contamination and structural stabilization, wherein the alumina diffusion barrier is a contiguous polycrystalline layer fabricated from alumina and approximately 1% by weight of a rutile additive to be substantially devoid of network porosity. The contiguous polycrystalline layer includes grains with a typical grain size being in a range of 0.5-3 ?m. A method for fabricating an alumina diffusion barrier includes the steps of: combining a nano-alumina and nano-rutile powder to create a formulation; applying the formulation to the platinum meander to form a layer; and sintering the layer to create a contiguous polycrystalline layer covering the platinum meander.

Abstract: A sensor assembly comprising a sensing element with at least one electrical lead extending therefrom. A tube encloses the sensing element and material surrounds the at least one electrical lead and defines a space around the at least one electrical lead so that when temperature gradients create push and pull, the at least one electrical lead moves within the space. The sensor assembly may further comprise a sleeve connected to the tube and surrounding the material. The sleeve may have an intermediate bent portion that the at least one electrical lead passes through, with a braided supply line connected to the leads, the braided supply line being arranged and configured within the bent portion to absorb movement of the two leads from temperature gradients. The lead can also extend through the sleeve forming a sinusoidal shape within the sleeve for absorbing movement resulting from temperature gradients.

Abstract: Electronic devices are disclosed that may be used for infrared radiation detection. An example electronic device includes a substrate, a transistor included in the substrate and a silicon-germanium (Si—Ge) structural layer coupled with the transistor. The structural layer has a stress in a predetermined range, where the predetermined range for the stress is selected prior to deposition of the structural layer. Also, the structural layer is deposited on the substrate subsequent to formation of the transistor such that deposition of the structural layer does not substantially adversely affect the operation of the transistor.

Abstract: Electronic devices are disclosed that may be used for infrared radiation detection. An example electronic device includes a substrate, a transistor included in the substrate and a silicon-germanium (Si—Ge) structural layer coupled with the transistor. The structural layer has a stress in a predetermined range, where the predetermined range for the stress is selected prior to deposition of the structural layer. Also, the structural layer is deposited on the substrate subsequent to formation of the transistor such that deposition of the structural layer does not substantially adversely affect the operation of the transistor.

Abstract: A method of controlling an internal stress in a polycrystalline silicon-germanium layer deposited on a substrate. The method includes selecting a deposition pressure that is at or below atmospheric pressure and selecting a deposition temperature that is no greater than 700° C. The deposition pressure and the deposition temperature are selected so as to achieve an internal stress in the silicon-germanium layer that is within a predetermined range.

Abstract: A method of fabricating an infrared detector, a method of controlling the stress in a polycrystalline SiGE layer and an infrared detector device is disclosed. The method of fabricating includes the steps of forming a sacrificial layer on a substrate; patterning said sacrificial layer; establishing a layer consisting essentially of polycrystalline SiGe on said sacrificial layer; depositing an infrared absorber on said polycrystalline SiGe layer; and thereafter removing the sacrificial layer. The method of controlling the stress in a polycrystalline SiGe layer deposited on a substrate is based on varying the deposition pressure. The infrared detector device comprises an active area and an infrared absorber, wherein the active area comprises a polycrystalline SiGe layer, and is suspended above a substrate.

Abstract: A method of fabricating an infrared detector, a method of controlling the stress in a polycrystalline SiGE layer and an infrared detector device is disclosed. The method of fabricating includes the steps of forming a sacrificial layer on a substrate; patterning said sacrificial layer; establishing a layer consisting essentially of polycrystalline SiGe on said sacrificial layer; depositing an infrared absorber on said polycrystalline SiGe layer; and thereafter removing the sacrificial layer. The method of controlling the stress in a polycrystalline SiGe layer deposited on a substrate is based on varying the deposition pressure. The infrared detector device comprises an active area and an infrared absorber, wherein the active area comprises a polycrystalline SiGe layer, and is suspended above a substrate.

Abstract: Two methods are provided for monitoring the catalytic activity of a catalytic converter arranged in the exhaust gas conduit of a motor vehicle. According to one method, proceeding from a cold start, a temperature progression is determined by a temperature sensor arranged downstream of the catalytic converter and a temperature plateau is thereby determined; the length of the temperature plateau is compared with the length of a temperature plateau determined in advance on a new catalytic converter; a shortening of the length of the measured temperature plateau is interpreted as an aging of the catalytic converter; and the catalytic converter is judged as defective if the shortening exceeds an established limiting value.

Abstract: A connection arrangement is provided for a mineral-insulated conduit with two ends to at least one tube-shaped structure, wherein at least one end is arranged partially overlapping with a tube-shaped structure and is affixed by welding or soldering, and wherein a sheath surface is arranged in the region of the overlap. The problem results of making available a connection arrangement for a mineral-insulated conduit to a tube-shaped structure, which is simple to produce and mechanically stable. The problem is solved in that the sheath surface has a structured surface, the end of the mineral-insulated conduit and the tube-shaped structure contact each other on all sides in the region of the overlap, and the contact surface is smaller than the sheath surface beyond the contact surface.

Abstract: A method for producing a platinum-containing resistor, configured as a temperature sensor, includes applying a resistive coat to a ceramic support having a surface of electrically insulating material, covering an outer surface of the resistive coat with at least one layer of an electrically insulating material, which is preferably applied as a diffusion barrier in the form of an intermediate layer, and forming an electrode on the side of the resistive coat facing away from the substrate surface and spaced therefrom, using a thick-film technique. This electrode, comprising a layer of platinum, is covered by a glass passivation layer and is therefore surrounded by the electrically insulating material of the diffusion barrier and the glass passivation layer. The electrode is negatively electrically biased in relation to at least one connection of the resistive layer or the measuring resistor.

Abstract: A method of fabricating an infrared detector, a method of controlling the stress in a polycrystalline SiGE layer and an infrared detector device is disclosed. The method of fabricating includes the steps of forming a sacrificial layer on a substrate; patterning said sacrificial layer; establishing a layer consisting essentially of polycrystalline SiGe on said sacrificial layer; depositing an infrared absorber on said polycrystalline SiGe layer; and thereafter removing the sacrificial layer. The method of controlling the stress in a polycrystalline SiGe layer deposited on a substrate is based on varying the deposition pressure. The infrared detector device comprises an active area and an infrared absorber, wherein the active area comprises a polycrystalline SiGe layer, and is suspended above a substrate.

Abstract: A method of fabricating an infrared detector, a method of controlling the stress in a polycrystalline SiGE layer and an infrared detector device is disclosed. The method of fabricating includes the steps of forming a sacrificial layer on a substrate; patterning said sacrificial layer; establishing a layer consisting essentially of polycrystalline SiGe on said sacrificial layer; depositing an infrared absorber on said polycrystalline SiGe layer; and thereafter removing the sacrificial layer. The method of controlling the stress in a polycrystalline SiGe layer deposited on a substrate is based on varying the deposition pressure. The infrared detector device comprises an active area and an infrared absorber, wherein the active area comprises a polycrystalline SiGe layer, and is suspended above a substrate.

Abstract: A connection arrangement is provided for a mineral-insulated conduit with two ends to at least one tube-shaped structure, wherein at least one end is arranged partially overlapping with a tube-shaped structure and is affixed by welding or soldering, and wherein a sheath surface is arranged in the region of the overlap. The problem results of making available a connection arrangement for a mineral-insulated conduit to a tube-shaped structure, which is simple to produce and mechanically stable. The problem is solved in that the sheath surface has a structured surface, the end of the mineral-insulated conduit and the tube-shaped structure contact each other on all sides in the region of the overlap, and the contact surface is smaller than the sheath surface beyond the contact surface.

Abstract: A method of fabricating an infrared detector, a method of controlling the stress in a polycrystalline SiGE layer and an infrared detector device is disclosed. The method of fabricating includes the steps of forming a sacrificial layer on a substrate; patterning said sacrificial layer; establishing a layer consisting essentially of polycrystalline SiGe on said sacrificial layer; depositing an infrared absorber on said polycrystalline SiGe layer; and thereafter removing the sacrificial layer. The method of controlling the stress in a polycrystalline SiGe layer deposited on a substrate is based on varying the deposition pressure. The infrared detector device comprises an active area and an infrared absorber, wherein the active area comprises a polycrystalline SiGe layer, and is suspended above a substrate.

Abstract: A process as well as an immersion sensor for measuring an electrochemical activity of a layer lying on a melt is provided, using an electrochemical sensor, which has a measuring cell and a counter electrode. In order to make possible reliably reproducible and accurate measurements in the layer, the measuring cell and counter electrode are first immersed in the melt, wherein the measuring cell and counter electrode are protected from contact with the layer and wherein the measuring cell and counter electrode are brought into contact with the melt and are heated. After that, the measuring cell is pulled up to perform the measurement in the layer, wherein the counter electrode is located in the melt during the measurement. For this purpose, the measuring cell and the counter electrode have a protective cover, and the measuring cell is arranged, in the immersion position of the sensor, above the counter electrode.

Abstract: A a process as well as an immersion sensor for measuring an electrochemical activity of a layer lying on a melt is provided, using an electrochemical sensor, which has a measuring cell and a counter electrode. In order to make possible reliably reproducible and accurate measurements in the layer, the measuring cell and counter electrode are first immersed in the melt, wherein the measuring cell and counter electrode are protected from contact with the layer and wherein the measuring cell and counter electrode are brought into contact with the melt and are heated. After that, the measuring cell is pulled up to perform the measurement in the layer, wherein the counter electrode is located in the melt during the measurement. For this purpose, the measuring cell and the counter electrode have a protective cover, and the measuring cell is arranged, in the immersion position of the sensor, above the counter electrode.

Abstract: A sampler for molten metal has a flat sample chamber arranged in a carrier tube, an inlet duct with an inflow opening arranged on the side of the flat sample chamber facing away from the immersion end of the carrier tube, and a wall surface which forms a sample analysis surface running parallel to the axis of the carrier tube. In order to create a sampler with which high-quality flat samples can be obtained and which can be easily removed from the sampler, a prechamber is arranged inside the carrier tube, at the end of the inlet duct facing away from the immersion end of the carrier tube, above the flat sample chamber and between the inlet duct and the inflow opening.