Abstract: Power semiconductor module (10, 10?) comprising at least four substrates (DCB1, DCB2, DCB3, DCB4, DCB5, DCB6) disposed on a baseplate (20), each having a first connection point for a higher potential (a) and a second connection point for a lower potential (b), and comprising a first busbar (30) connected to the first connection points for the higher potential (a) and a second busbar (40) connected to the second connection points for the lower potential (b), characterized in that the order of the connection points (b, a) of at least one substrate (DCB4) differs from the order of the connection points (a, b) of the other substrates (DCB1, DCB2, DCB3, DCB5, DCB6).