Abstract: The invention relates to a method for increasing the purity of oligosilanes and/or oligosilane compounds, in which a first liquid substance mixture formed from at least 50% oligosilane compounds comprising inorganic oligosilanes and/or halogenated oligosilanes and/or organically substituted oligosilanes is provided, and the first liquid substance mixture is subjected to at least one purification sequence, wherein in a first step a) the liquid substance mixture is temperature adjusted to a temperature at which at least one fraction of the oligosilane compounds solidify, and in a second step b) at least one fraction of the liquid substance mixture is separated.

Abstract: The invention relates to a method for increasing the purity of oligosilanes and/or oligosilane compounds, in which a first liquid substance mixture formed from at least 50% oligosilane compounds comprising inorganic oligosilanes and/or halogenated oligosilanes and/or organically substituted oligosilanes is provided, and the first liquid substance mixture is subjected to at least one purification sequence, wherein in a first step a) the liquid substance mixture is temperature adjusted to a temperature at which at least one fraction of the oligosilane compounds solidify, and in a second step b) at least one fraction of the liquid substance mixture is separated.

Abstract: The invention relates to a method for purifying halogenated oligosilanes in the form of a pure compound or a mixture of compounds with respectively at least one direct Si—Si bond, the substituents thereof being exclusively made from halogen or from halogen and hydrogen and in the composition thereof, the atomic ratio of the substituents:silicon is at least 3:2, by the action of at least one purification agent on the halogenated oligosilane and by isolating the halogenated oligosilanes with improved purity. According to prior art, halogenated monosilanes such as HSiCl3 are purified by treating with organic compounds, preferably polymers, containing amino groups, and are separated from said mixtures. Based on the contained amino groups, said method can not be used for halogenated oligosilanes as the secondary reactions lead to a decomposition of the products. The novel method is used to provide the desired products in a high yield and purity without using the amino groups.

Abstract: The invention relates to a method for the plasma-assisted synthesis of organohalosilanes in which organohalosilanes of the general empirical formula R1mR2oSiX4-p (X=F, Cl, Br or I; p=1-4; p=m+o; m=1-4; o=0-3; R1, R2=alkyl, alkenyl, alkinyl, aryl) and/or carbosilanes of the general empirical formula R3qSiX3-qCH2SiR4rX3-r (X=F, Cl, Br or I; q=0-3; r=0-3; R3, R4=alkyl, alkenyl, alkinyl, aryl) are formed by activating a plasma in a mixture of one or more volatile organic compounds from the group of alkanes, alkenes, alkines and aromates with SiX4 and/or organohalosilanes RnSiX4-n (X=F, Cl, Br oder I; n=1-4; R=alkyl, alkenyl, alkinyl, aryl).

Abstract: The present invention relates to a process for preparing chlorinated oligosilanes, wherein chlorinated polysilane having an empirical formula of SiCl1.0-2.8 and/or a mixture comprising the chlorinated polysilane is reacted with elemental chlorine or a chlorine-containing mixture. Additionally claimed are chlorinated oligosilanes prepared by the process and the use thereof for production of semiconductors and/or hard coatings.

Abstract: 1. The present invention relates to a method for the purification of halogenated oligosilanes as a pure compound or mixture of compounds each having at least one direct Si—Si bond, the substituents thereof being exclusively halogen or halogen and hydrogen, and the composition thereof being an atom ratio of substituent:silicon of at least 3:2, by the action of at least one purification agent on the halogenated oligosilane and isolation of the halogenated oligosilane with improved purity. 2.1. In the prior art, halogenated monosilanes such as HSiCl3 are purified by treatment with preferably polymeric organic compounds containing amino groups, and are separated out from these mixtures. This method cannot be used for halogenated oligosilanes because of the contained amino groups, since secondary reactions would lead to decomposition of the products. The new method should provide the desired products in high yield and purity without amino groups being used. 2.2.

Abstract: The present invention relates to a halogenated polysilane as a pure compound or a mixture of compounds each having at least one direct Si—Si bond, whose substituents consist exclusively of halogen or of halogen and hydrogen and in the composition of which the atomic ratio of substituent to silicon is at least 1:1.

Abstract: The present invention relates to a halogenated polysilane as a pure compound or mixture of compounds each having at least one direct Si—Si bond, whose substituents consist exclusively of halogen or of halogen and hydrogen and in whose composition the atomic ratio substituent:silicon is greater than 1:1.

Abstract: A method for removing impurities from silicon includes A) providing metallic silicon having impurities, B) mixing the metallic silicon with at least one halogenated polysilane of Formula SiXn, where X is halogen, which may be partially replaced by hydrogen, and where 1<n<2.5, and C) heating the metallic silicon so that there is at least partly a reaction of the impurities with the at least one halogenated polysilane or with a decomposition product of the at least one halogenated polysilane, wherein C) may take place before, during and/or after B).

Abstract: The invention relates to a method for producing halogenated oligomers and/or halogenated polymers of elements of the third to fifth main group, wherein the halogenated oligomers and/or halogenated polymers are synthesized from a first chain-forming agent and a second chain-forming agent in a plasma-chemical reaction. At least one of the two chain-forming agents is a halogen compound of an element of the third to fifth main group.

Abstract: A method and a device produce short-chain halogenated polysilanes and/or short-chain halogenated polysilanes and halide-containing silicon by thermolytic decomposition of long-chain halogenated polysilanes. The thermolytic decomposition of long-chain halogenated polysilanes diluted with low-molecular halosilanes is carried out under an atmosphere of halosilanes, thereby ensuring the production of such products at industrial scale in a simple and cost-effective manner.

Abstract: The invention describes a process for removing nonmetallic impurities from metallurgical silicon. A melt is produced from metallurgical silicon and halide-containing silicon. As a result, the impurities are sublimed out and removed from the melt in the form of nonmetal halides. Compared with the known process, in which gaseous halogen is blown through an Si melt, the novel process can be carried out in a particularly simple and efficient manner.

Abstract: A method produces hexachlorodisilane. Hexachlorodisilane is obtained by oxidative splitting of the chlorinated polysilane of the empirical formula SiClx (x=0,2-0,8) using chlorine gas. The hexachlorodisilane is selectively obtained with a high yield.

Abstract: The invention relates to nanowires which consist of or comprise semiconductor materials and are used for applications in photovoltaics and electronics and to a method for the production thereof. The nanowires are characterized in that they are obtained by a novel method using novel precursors. The precursors represent compounds, or mixtures of compounds, each having at least one direct Si—Si and/or Ge—Si and/or Ge—Ge bond, the substituents of which consist of halogen and/or hydrogen, and in the composition of which the atomic ratio of substituent:metalloid atoms is at least 1:1.

Abstract: A process for preparing a halogenated polysilane HpSin?pX(2n+2)?p with n=1 to 50; 0?p?2n+1, and X=F, Cl, Br, I, as an individual compound or a mixture of compounds, from a mixture which includes the halogenated polysilane or in which the halogenated polysilane is formed, additionally includes boron-containing impurities, wherein a) the mixture is admixed with at least 1 ppbw (parts per billion per weight) of a siloxane-forming oxidizing agent or siloxane, the boron-containing impurities forming compounds having a volatility and/or solubility different from the halogenated polysilanes, b) the halogenated polysilane is separated from the compound(s), and c) not more than 1 ppmw of water and not less than 1 ppb of siloxanes are present.

Abstract: Bodies coated with a SiC layer or with a multilayer coating system that include at least a SiC hard material layer, wherein the SiC layer consists of halogen-containing nanocrystalline 3C—SiC or a mixed layer which consists of halogen-containing nanocrystalline 3C—SiC and amorphous SiC or halogen-containing nanocrystalline 3C—SiC and amorphous carbon.

Abstract: Kinetically stable halogenated polysilanes include mixture of compounds having respectively at least four silicon atoms bound together, the substituents thereof comprising chlorine, and chlorine and hydrogen, and in the composition thereof, the atomic ratio of substituent to silicon is at least 1:1, wherein a) the kinetically stable halogenated polysilanes have a kinetically high stability in relation to oxidative splitting by chlorine, and the degree of conversion at temperatures of 120° C. within 10 hours with an excess of chlorine gas at 1013 hPa does not exceed 30 mol %, and b) the kinetically stable halogenated polysilanes have a percentage of branching points in the polysilane molecules of more than 8 mol %.

Abstract: A storage material for obtaining H-silanes which is present in the form of a hydrogenated polysilane (HPS), as a pure compound or as a mixture of compounds having on average at least six direct Si—Si bonds, the substituenis of which predominantly consist of hydrogen and in the composition of which the atomic ratio of sabstitueot to silicon is at least 1:1.

Abstract: A storage material for obtaining H-silanes which is present in the form of a hydrogenated polysilane (HPS), as a pure compound or as a mixture of compounds having on average at least six direct Si—Si bonds, the substituenis of which predominantly consist of hydrogen and in the composition of which the atomic ratio of sabstitueot to silicon is at least 1:1.

Abstract: The invention relates to a method for producing fluorinated polysilanes. Hydrogen fluoride and/or hexafluorosilicic acid, which are obtained in particular during acid digestion of mineral phosphates in the production of phosphate fertilisers, are used for the production of SiF4. The SiF4 obtained is thermally or plasma-chemically converted to fluorinated polysilane. The method is particularly efficient and cost-effective.