Patents by Inventor Christian Belouet

Christian Belouet has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8506704
    Abstract: The invention relates to a method of fabricating at least one polycrystalline silicon plate (68, 70) with one (64, 66) of its two faces presenting predetermined relief, in which method a layer of polycrystalline silicon (60, 62) is deposited on at least one (56, 58) of the two faces of a support (50). The method comprises the steps of embossing said face (52, 54) of the support (50) to impart thereto a shape that is complementary to said relief; depositing said polycrystalline silicon layer (60, 62) on said embossed face (56, 58) of the support (50), the surface (64 or 66) of said polycrystalline silicon layer situated in contact with said embossed face (56 or 58) then taking on the shape of said relief; and eliminating said support in order to obtain said polycrystalline silicon plate (68 or 70). The invention is applicable to fabricating solar cells.
    Type: Grant
    Filed: March 18, 2005
    Date of Patent: August 13, 2013
    Assignee: SOLARFORCE
    Inventors: Christian Belouet, Claude Remy
  • Patent number: 8410352
    Abstract: The invention relates to a method of fabricating photovoltaic cells in which at least one layer of semiconductor material is deposited continuously on a carbon ribbon (10) to form a composite ribbon (20), said layer having a free face (22, 24) opposite from its face in contact with the carbon ribbon. According to the invention, at least one treatment (28) is applied to the layer of semiconductor material, from said free face (22, 24), in order to implement photovoltaic functions of the cells on said layer, prior to eliminating the carbon ribbon (10). The invention makes it possible to increase productivity in the fabrication of photovoltaic cells, which cells can be of very small thicknesses.
    Type: Grant
    Filed: December 8, 2005
    Date of Patent: April 2, 2013
    Assignee: Solarforce
    Inventors: Christian Belouet, Claude Remy
  • Patent number: 8256373
    Abstract: The present invention relates to a device (100) for depositing a layer based on polycrystalline silicon onto a substantially plane, elongate, moving support (4) having two longitudinal faces (43, 44) and two longitudinal side edges (41, 42), the device comprising: a crucible (1) containing a bath (2) of molten silicon, said support (4) being designed to be dipped at least in part in the bath and to pass substantially vertically in its long direction through the equilibrium surface (21) of the bath; and at least one edge control element (5, 5?), each edge control element being maintained substantially vertically close to one of the two longitudinal side edges (41, 42); each edge control element comprising walls (51 to 53?) defining a longitudinal slot (54, 54?) beside the corresponding longitudinal side edge, each slot being dipped in part in the bath (2) so as to raise the level of the bath by capillarity in the vicinity of the corresponding longitudinal side edge, the device being characterized in that at
    Type: Grant
    Filed: December 10, 2004
    Date of Patent: September 4, 2012
    Assignee: Solarforce
    Inventors: Christian Belouet, Claude Remy
  • Patent number: 8092594
    Abstract: The present invention relates to a carbon ribbon for covering in a thin layer of semiconductor material, and to a method of deposited such a layer on a substrate constituted by a carbon ribbon. At least one of the two faces of the carbon ribbon is for covering in a layer of semiconductor material by causing the ribbon to pass substantially vertically upwards through a bath of molten semiconductor material. According to the invention, the two edges of at least one of the two faces of the carbon ribbon project so as to form respective rims.
    Type: Grant
    Filed: June 7, 2006
    Date of Patent: January 10, 2012
    Assignee: SOLARFORCE
    Inventor: Christian Belouet
  • Publication number: 20090302425
    Abstract: The present invention relates to a carbon ribbon for covering in a thin layer of semiconductor material, and to a method of deposited such a layer on a substrate constituted by a carbon ribbon. At least one of the two faces of the carbon ribbon is for covering in a layer of semiconductor material by causing the ribbon to pass substantially vertically upwards through a bath of molten semiconductor material. According to the invention, the two edges of at least one of the two faces of the carbon ribbon project so as to form respective rims.
    Type: Application
    Filed: June 7, 2006
    Publication date: December 10, 2009
    Inventor: Christian Belouet
  • Publication number: 20080210299
    Abstract: The invention relates to a method of fabricating photovoltaic cells in which at least one layer of semiconductor material is deposited continuously on a carbon ribbon (10) to form a composite ribbon (20), said layer having a free face (22, 24) opposite from its face in contact with the carbon ribbon. According to the invention, at least one treatment (28) is applied to the layer of semiconductor material, from said free face (22, 24), in order to implement photovoltaic functions of the cells on said layer, prior to eliminating the carbon ribbon (10). The invention makes it possible to increase productivity in the fabrication of photovoltaic cells, which cells can be of very small thicknesses.
    Type: Application
    Filed: December 8, 2005
    Publication date: September 4, 2008
    Inventors: Christian Belouet, Claud Remy
  • Patent number: 7405855
    Abstract: A tunable optical filter comprising an index grating produced in a waveguide defining a longitudinal direction of propagation of an incident optical signal, said grating being defined by a plurality of optical parameters, is characterized in that the optical guide contains semiconductor nanoparticles and in that the index grating is made up of a refractive index variation in the guide that is at least partly induced by a Kerr effect linked to the 3rd order dielectric susceptibility (?3) of said nanoparticles, at least one of said parameters of said index grating being modified by application of an optical control signal coupled into the guide and propagating longitudinally in said guide.
    Type: Grant
    Filed: April 21, 2004
    Date of Patent: July 29, 2008
    Assignee: ALCATEL
    Inventors: Isabelle Riant, Christian Belouet
  • Publication number: 20070214839
    Abstract: The present invention relates to a device (100) for depositing a layer based on polycrystalline silicon onto a substantially plane, elongate, moving support (4) having two longitudinal faces (43, 44) and two longitudinal side edges (41, 42), the device comprising: a crucible (1) containing a bath (2) of molten silicon, said support (4) being designed to be dipped at least in part in the bath and to pass substantially vertically in its long direction through the equilibrium surface (21) of the bath; and at least one edge control element (5, 5?), each edge control element being maintained substantially vertically close to one of the two longitudinal side edges (41, 42); each edge control element comprising walls (51 to 53?) defining a longitudinal slot (54, 54?) beside the corresponding longitudinal side edge, each slot being dipped in part in the bath (2) so as to raise the level of the bath by capillarity in the vicinity of the corresponding longitudinal side edge, the device being characterized in that a
    Type: Application
    Filed: December 10, 2004
    Publication date: September 20, 2007
    Inventors: Christian Belouet, Claude Remy
  • Publication number: 20070193503
    Abstract: The invention relates to a method of fabricating at least one polycrystalline silicon plate (68, 70) with one (64, 66) of its two faces presenting predetermined relief, in which method a layer of polycrystalline silicon (60, 62) is deposited on at least one (56, 58) of the two faces of a support (50). The method comprises the steps of embossing said face (52, 54) of the support (50) to impart thereto a shape that is complementary to said relief; depositing said polycrystalline silicon layer (60, 62) on said embossed face (56, 58) of the support (50), the surface (64 or 66) of said polycrystalline silicon layer situated in contact with said embossed face (56 or 58) then taking on the shape of said relief; and eliminating said support in order to obtain said polycrystalline silicon plate (68 or 70). The invention is applicable to fabricating solar cells.
    Type: Application
    Filed: March 18, 2005
    Publication date: August 23, 2007
    Inventor: Christian Belouet
  • Publication number: 20070183048
    Abstract: A tunable optical filter comprising an index grating produced in a waveguide defining a longitudinal direction of propagation of an incident optical signal, said grating being defined by a plurality of optical parameters, is characterized in that the optical guide contains semiconductor nanoparticles and in that the index grating is made up of a refractive index variation in the guide that is at least partly induced by a Kerr effect linked to the 3rd order dielectric susceptibility (?3) of said nanoparticles, at least one of said parameters of said index grating being modified by application of an optical control signal coupled into the guide and propagating longitudinally in said guide.
    Type: Application
    Filed: April 21, 2004
    Publication date: August 9, 2007
    Inventors: Isabelle Riant, Christian Belouet
  • Patent number: 7031590
    Abstract: The present invention concerns an optical guide (100) comprising an amplifier medium including: a core (10) in a main matrix of a transparent material, the main matrix containing particules (1, 2), each particule being formed of a submicronic matrix distinct from the main matrix and doped by an active metal element, an external guiding cladding (11) in contact with the core (10). The size of the particules (1, 2) is smaller than 20 nm. The present invention also concerns a method for producing this guide.
    Type: Grant
    Filed: March 14, 2003
    Date of Patent: April 18, 2006
    Assignee: Alcatel
    Inventors: Laurent Gasca, Alain Pastouret, Christine Moreau, Pascal Baniel, Christian Belouet
  • Patent number: 6743345
    Abstract: A process for metallizing a substrate part includes the following three steps: coating the part with a precursor composite material layer consisting of a polymer matrix doped with photoreducer material dielectric particles, irradiating the surface to be metallized of the substrate part with a light beam emitted by a laser, and immersing the irradiated part in an autocatalytic bath containing metal ions, with deposition of the latter in a layer on the irradiated surface. The dimension of the dielectric particles is less than or equal to 0.5 microns. The method is intended in particular for producing a metallized part including a substrate part consisting of a flexible film.
    Type: Grant
    Filed: March 13, 2002
    Date of Patent: June 1, 2004
    Assignee: Nexans
    Inventors: Christian Belouet, Bertrand Joly, Didier Lecomte, Patricia Laurens
  • Patent number: 6649570
    Abstract: A buffer layer structure based on doped ceria for providing optimized lattice match with a YBCO layer in a conductor, a lattice matching layer for use in said structure and process of manufacturing thereof. Said buffer layer comprises a CeO2 layer doped with a dopant, and has a superconductive layer of YBCO on said CeO2 layer. The invention is characterized in that the CeO2 layer is a lattice matching layer.
    Type: Grant
    Filed: October 5, 2001
    Date of Patent: November 18, 2003
    Assignee: Nexans
    Inventor: Christian Belouet
  • Publication number: 20030175003
    Abstract: The present invention concerns an optical guide (100) comprising an amplifier medium including:
    Type: Application
    Filed: March 14, 2003
    Publication date: September 18, 2003
    Applicant: ALCATEL
    Inventors: Laurent Gasca, Alain Pastouret, Christine Moreau, Pascal Baniel, Christian Belouet
  • Publication number: 20030031803
    Abstract: A process for metallizing a substrate part includes the following three steps: coating the part with a precursor composite material layer consisting of a polymer matrix doped with photoreducer material dielectric particles, irradiating the surface to be metallized of the substrate part with a light beam emitted by a laser, and immersing the irradiated part in an autocatalytic bath containing metal ions, with deposition of the latter in a layer on the irradiated surface. The dimension of the dielectric particles is less than or equal to 0.5 microns. The method is intended in particular for producing a metallized part including a substrate part consisting of a flexible film.
    Type: Application
    Filed: March 13, 2002
    Publication date: February 13, 2003
    Inventors: Christian Belouet, Bertrand Joly, Didier Lecomte, Patricia Laurens
  • Publication number: 20020041973
    Abstract: A buffer layer structure based on doped ceria for providing optimized lattice match with a YBCO layer in a conductor, a lattice matching layer for use in said structure and process of manufacturing thereof. Said buffer layer comprises a CeO2 layer doped with a dopant, and has a superconductive layer of YBCO on said CeO2 layer. The invention is characterized in that the CeO2 layer is a lattice matching layer.
    Type: Application
    Filed: October 5, 2001
    Publication date: April 11, 2002
    Applicant: NEXANS
    Inventor: Christian Belouet
  • Patent number: 6103010
    Abstract: A thin ferromagnetic film is deposited directly onto the surface of a waveguide. The crystalline orientation of the ferromagnetic film is restricted to a predetermined orientation by pulverizing nuclei that do not have the predetermined orientation.
    Type: Grant
    Filed: September 16, 1997
    Date of Patent: August 15, 2000
    Assignee: Alcatel
    Inventor: Christian Belouet
  • Patent number: 5851954
    Abstract: A composite based on a superconducting oxide having a high critical temperature, characterized by the fact that it is constituted by glass and said oxide, the glass being such that its vitreous transition temperature is not greater than 750K, the volume fraction of the glass lying in the range 2% to 40%, said oxide existing in the glass in the form of crystallites having substantially the same orientation.
    Type: Grant
    Filed: January 3, 1992
    Date of Patent: December 22, 1998
    Assignee: Alcatel Alsthom Compagnie Generale D'Electricite
    Inventors: Michel Ribes, Christian Belouet
  • Patent number: 5780120
    Abstract: A method of preparing faces of a laser based on III-IV compounds, the method comprising the following operations:1) the faces of the laser are opened;2) said faces of the laser are placed in an enclosure in which there obtains a pressure of about 10.sup.-7 mbar to about 10.sup.-8 mbar, and they are subjected to a step of cleaning by irradiation with a pulsed laser; and3) the same pulsed laser is used to ablate a target so as to subject said faces to a passivation operation whereby silicon Si or gallium nitride GaN is deposited thereon by the pulsed laser deposition method until a thickness is obtained lying in the range 2 .ANG. to 20 .ANG..
    Type: Grant
    Filed: December 18, 1996
    Date of Patent: July 14, 1998
    Assignee: Alcatel Alsthom Compagnie Generale d'Electricite
    Inventors: Christian Belouet, Dominique Boccon-Gibod, Sylvaine Kerboeuf
  • Patent number: 5595960
    Abstract: A method of preparing a substrate with a view to depositing a thin layer of a superconductive material thereon, wherein an operation is performed of depositing on the substrate an intermediate material having the property of having a crystal lattice constant that is a function of the percentage of a doping element, the depositing operation being initiated with a concentration of the doping element such that the lattice constant of the intermediate material is equal to or as close as possible to the lattice constant of the substrate, the proportion of the doping element being continuously varied during the depositing operation to a proportion of the doping element such that the lattice constant of the intermediate material is equal to or as close as possible to the lattice constant of the superconductive material.
    Type: Grant
    Filed: October 13, 1995
    Date of Patent: January 21, 1997
    Assignee: Alcatel Alsthom Compagnie Generale d'Electricite
    Inventors: Christian Belouet, Didier Chambonnet