Abstract: A method for manufacturing a single crystal may be by solution growth from a seed crystal, in a unit including a tank and a growth platform having a lower plate. The method may include: fastening the seed to the lower plate; introducing a crystallization solution of density dS into the tank; treating the solution in order to render it supersaturated; bringing the seed into contact with the supersaturated solution; rotating the platform until the single crystal is obtained. Before bringing the seed into contact with the supersaturated solution, the method may include forming, in the tank, of a zone for trapping parasitic crystals of density dC by introducing, into the tank, a liquid, immiscible with the growth solution, of density d>dS and d<dc, which forms with the growth solution an interface located below the lower plate.

Abstract: A method for manufacturing a single crystal may be by solution growth from a seed crystal, in a unit including a tank and a growth platform having a lower plate. The method may include: fastening the seed to the lower plate; introducing a crystallization solution of density dS into the tank; treating the solution in order to render it supersaturated; bringing the seed into contact with the supersaturated solution; rotating the platform until the single crystal is obtained. Before bringing the seed into contact with the supersaturated solution, the method may include forming, in the tank, of a zone for trapping parasitic crystals of density dC by introducing, into the tank, a liquid, immiscible with the growth solution, of density d>dS and d<dc, which forms with the growth solution an interface located below the lower plate.

Abstract: The invention relates to a method of fabricating at least one polycrystalline silicon plate (68, 70) with one (64, 66) of its two faces presenting predetermined relief, in which method a layer of polycrystalline silicon (60, 62) is deposited on at least one (56, 58) of the two faces of a support (50). The method comprises the steps of embossing said face (52, 54) of the support (50) to impart thereto a shape that is complementary to said relief; depositing said polycrystalline silicon layer (60, 62) on said embossed face (56, 58) of the support (50), the surface (64 or 66) of said polycrystalline silicon layer situated in contact with said embossed face (56 or 58) then taking on the shape of said relief; and eliminating said support in order to obtain said polycrystalline silicon plate (68 or 70). The invention is applicable to fabricating solar cells.

Abstract: The invention relates to a method of fabricating photovoltaic cells in which at least one layer of semiconductor material is deposited continuously on a carbon ribbon (10) to form a composite ribbon (20), said layer having a free face (22, 24) opposite from its face in contact with the carbon ribbon. According to the invention, at least one treatment (28) is applied to the layer of semiconductor material, from said free face (22, 24), in order to implement photovoltaic functions of the cells on said layer, prior to eliminating the carbon ribbon (10). The invention makes it possible to increase productivity in the fabrication of photovoltaic cells, which cells can be of very small thicknesses.

Abstract: The present invention relates to a device (100) for depositing a layer based on polycrystalline silicon onto a substantially plane, elongate, moving support (4) having two longitudinal faces (43, 44) and two longitudinal side edges (41, 42), the device comprising: a crucible (1) containing a bath (2) of molten silicon, said support (4) being designed to be dipped at least in part in the bath and to pass substantially vertically in its long direction through the equilibrium surface (21) of the bath; and at least one edge control element (5, 5?), each edge control element being maintained substantially vertically close to one of the two longitudinal side edges (41, 42); each edge control element comprising walls (51 to 53?) defining a longitudinal slot (54, 54?) beside the corresponding longitudinal side edge, each slot being dipped in part in the bath (2) so as to raise the level of the bath by capillarity in the vicinity of the corresponding longitudinal side edge, the device being characterized in that at

Abstract: The present invention relates to a carbon ribbon for covering in a thin layer of semiconductor material, and to a method of deposited such a layer on a substrate constituted by a carbon ribbon. At least one of the two faces of the carbon ribbon is for covering in a layer of semiconductor material by causing the ribbon to pass substantially vertically upwards through a bath of molten semiconductor material. According to the invention, the two edges of at least one of the two faces of the carbon ribbon project so as to form respective rims.

Abstract: The present invention relates to a carbon ribbon for covering in a thin layer of semiconductor material, and to a method of deposited such a layer on a substrate constituted by a carbon ribbon. At least one of the two faces of the carbon ribbon is for covering in a layer of semiconductor material by causing the ribbon to pass substantially vertically upwards through a bath of molten semiconductor material. According to the invention, the two edges of at least one of the two faces of the carbon ribbon project so as to form respective rims.

Abstract: The invention relates to a method of fabricating photovoltaic cells in which at least one layer of semiconductor material is deposited continuously on a carbon ribbon (10) to form a composite ribbon (20), said layer having a free face (22, 24) opposite from its face in contact with the carbon ribbon. According to the invention, at least one treatment (28) is applied to the layer of semiconductor material, from said free face (22, 24), in order to implement photovoltaic functions of the cells on said layer, prior to eliminating the carbon ribbon (10). The invention makes it possible to increase productivity in the fabrication of photovoltaic cells, which cells can be of very small thicknesses.

Abstract: A tunable optical filter comprising an index grating produced in a waveguide defining a longitudinal direction of propagation of an incident optical signal, said grating being defined by a plurality of optical parameters, is characterized in that the optical guide contains semiconductor nanoparticles and in that the index grating is made up of a refractive index variation in the guide that is at least partly induced by a Kerr effect linked to the 3rd order dielectric susceptibility (?3) of said nanoparticles, at least one of said parameters of said index grating being modified by application of an optical control signal coupled into the guide and propagating longitudinally in said guide.

Abstract: The present invention relates to a device (100) for depositing a layer based on polycrystalline silicon onto a substantially plane, elongate, moving support (4) having two longitudinal faces (43, 44) and two longitudinal side edges (41, 42), the device comprising: a crucible (1) containing a bath (2) of molten silicon, said support (4) being designed to be dipped at least in part in the bath and to pass substantially vertically in its long direction through the equilibrium surface (21) of the bath; and at least one edge control element (5, 5?), each edge control element being maintained substantially vertically close to one of the two longitudinal side edges (41, 42); each edge control element comprising walls (51 to 53?) defining a longitudinal slot (54, 54?) beside the corresponding longitudinal side edge, each slot being dipped in part in the bath (2) so as to raise the level of the bath by capillarity in the vicinity of the corresponding longitudinal side edge, the device being characterized in that a

Abstract: The invention relates to a method of fabricating at least one polycrystalline silicon plate (68, 70) with one (64, 66) of its two faces presenting predetermined relief, in which method a layer of polycrystalline silicon (60, 62) is deposited on at least one (56, 58) of the two faces of a support (50). The method comprises the steps of embossing said face (52, 54) of the support (50) to impart thereto a shape that is complementary to said relief; depositing said polycrystalline silicon layer (60, 62) on said embossed face (56, 58) of the support (50), the surface (64 or 66) of said polycrystalline silicon layer situated in contact with said embossed face (56 or 58) then taking on the shape of said relief; and eliminating said support in order to obtain said polycrystalline silicon plate (68 or 70). The invention is applicable to fabricating solar cells.

Abstract: A tunable optical filter comprising an index grating produced in a waveguide defining a longitudinal direction of propagation of an incident optical signal, said grating being defined by a plurality of optical parameters, is characterized in that the optical guide contains semiconductor nanoparticles and in that the index grating is made up of a refractive index variation in the guide that is at least partly induced by a Kerr effect linked to the 3rd order dielectric susceptibility (?3) of said nanoparticles, at least one of said parameters of said index grating being modified by application of an optical control signal coupled into the guide and propagating longitudinally in said guide.

Abstract: The present invention concerns an optical guide (100) comprising an amplifier medium including: a core (10) in a main matrix of a transparent material, the main matrix containing particules (1, 2), each particule being formed of a submicronic matrix distinct from the main matrix and doped by an active metal element, an external guiding cladding (11) in contact with the core (10). The size of the particules (1, 2) is smaller than 20 nm. The present invention also concerns a method for producing this guide.

Abstract: A process for metallizing a substrate part includes the following three steps: coating the part with a precursor composite material layer consisting of a polymer matrix doped with photoreducer material dielectric particles, irradiating the surface to be metallized of the substrate part with a light beam emitted by a laser, and immersing the irradiated part in an autocatalytic bath containing metal ions, with deposition of the latter in a layer on the irradiated surface. The dimension of the dielectric particles is less than or equal to 0.5 microns. The method is intended in particular for producing a metallized part including a substrate part consisting of a flexible film.

Abstract: A buffer layer structure based on doped ceria for providing optimized lattice match with a YBCO layer in a conductor, a lattice matching layer for use in said structure and process of manufacturing thereof. Said buffer layer comprises a CeO2 layer doped with a dopant, and has a superconductive layer of YBCO on said CeO2 layer. The invention is characterized in that the CeO2 layer is a lattice matching layer.

Abstract: The present invention concerns an optical guide (100) comprising an amplifier medium including:

Abstract: A process for metallizing a substrate part includes the following three steps: coating the part with a precursor composite material layer consisting of a polymer matrix doped with photoreducer material dielectric particles, irradiating the surface to be metallized of the substrate part with a light beam emitted by a laser, and immersing the irradiated part in an autocatalytic bath containing metal ions, with deposition of the latter in a layer on the irradiated surface. The dimension of the dielectric particles is less than or equal to 0.5 microns. The method is intended in particular for producing a metallized part including a substrate part consisting of a flexible film.

Abstract: A buffer layer structure based on doped ceria for providing optimized lattice match with a YBCO layer in a conductor, a lattice matching layer for use in said structure and process of manufacturing thereof. Said buffer layer comprises a CeO2 layer doped with a dopant, and has a superconductive layer of YBCO on said CeO2 layer. The invention is characterized in that the CeO2 layer is a lattice matching layer.

Abstract: A thin ferromagnetic film is deposited directly onto the surface of a waveguide. The crystalline orientation of the ferromagnetic film is restricted to a predetermined orientation by pulverizing nuclei that do not have the predetermined orientation.

Abstract: A composite based on a superconducting oxide having a high critical temperature, characterized by the fact that it is constituted by glass and said oxide, the glass being such that its vitreous transition temperature is not greater than 750K, the volume fraction of the glass lying in the range 2% to 40%, said oxide existing in the glass in the form of crystallites having substantially the same orientation.