Patents by Inventor Christian Binek

Christian Binek has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10361292
    Abstract: Antiferromagnetic magneto-electric spin-orbit read (AFSOR) logic devices are presented. The devices include a voltage-controlled magnetoelectric (ME) layer that switches polarization in response to an electric field from the applied voltage and a narrow channel conductor of a spin-orbit coupling (SOC) material on the ME layer. One or more sources and one or more drains, each optionally formed of ferromagnetic material, are provided on the SOC material.
    Type: Grant
    Filed: February 17, 2018
    Date of Patent: July 23, 2019
    Assignees: INTEL CORPORATION, THE RESEARCH FOUNDATION FOR THE STATE UNIVERSITY OF NEW YORK, BOARD OF REGENTS OF THE UNIVERSITY OF NEBRASKA, THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Dmitri E. Nikonov, Christian Binek, Xia Hong, Jonathan P. Bird, Kang L. Wang, Peter A. Dowben
  • Publication number: 20180240896
    Abstract: Antiferromagnetic magneto-electric spin-orbit read (AFSOR) logic devices are presented. The devices include a voltage-controlled magnetoelectric (ME) layer that switches polarization in response to an electric field from the applied voltage and a narrow channel conductor of a spin-orbit coupling (SOC) material on the ME layer. One or more sources and one or more drains, each optionally formed of ferromagnetic material, are provided on the SOC material.
    Type: Application
    Filed: February 17, 2018
    Publication date: August 23, 2018
    Applicants: Board of Regents of the University of Nebraska, Intel Corporation, The Research Foundation for the State University of New York STOR - University at Buffalo, The Regents of the University of California
    Inventors: Dmitri E. NIKONOV, Christian BINEK, XIA HONG, Jonathan P. BIRD, Kang L. WANG, Peter A. DOWBEN
  • Patent number: 9718700
    Abstract: A magnetoelectric composition of boron and chromia is provided. The boron and chromia alloy can contain boron doping of 1%-10% in place of the oxygen in the chromia. The boron-doped chromia exhibits an increased critical temperature while maintaining magnetoelectric characteristics. The composition can be fabricated by depositing chromia in the presence of borane. The boron substitutes oxygen in the chromia, enhancing the exchange energy and thereby increasing NĂ©el temperature.
    Type: Grant
    Filed: February 23, 2015
    Date of Patent: August 1, 2017
    Assignee: Board of Regents of the University of Nebraska
    Inventors: Christian Binek, Peter Dowben, Kirill Belashchenko, Aleksander Wysocki, Sai Mu, Mike Street
  • Patent number: 9574802
    Abstract: A method for refrigeration through voltage-controlled entropy change includes applying a voltage signal to a piezoelectric material to generate strain in the piezoelectric material, generating strain in a magnetic material attached to the piezoelectric material, and generating a change in a temperature of the magnetic material in response to the strain in the magnetic material.
    Type: Grant
    Filed: May 23, 2016
    Date of Patent: February 21, 2017
    Assignee: NUtech Ventures
    Inventor: Christian Binek
  • Publication number: 20160265817
    Abstract: A method for refrigeration through voltage-controlled entropy change includes applying a voltage signal to a piezoelectric material to generate strain in the piezoelectric material, generating strain in a magnetic material attached to the piezoelectric material, and generating a change in a temperature of the magnetic material in response to the strain in the magnetic material.
    Type: Application
    Filed: May 23, 2016
    Publication date: September 15, 2016
    Inventor: Christian Binek
  • Patent number: 9379232
    Abstract: The invention relates to a magneto-electric spin-FET including a gate film of chromia and a thin film of a conductive channel material which may be graphene, InP, GaAs, GaSb, PbS, MoS2, WS2, MoSe2, WSe2 and mixtures thereof. The chromia, or other magneto-electric, and conduction channel material are in intimate contact along an interface there between. The resulting magneto-electric device may be voltage-controlled and provide non-volatile memory.
    Type: Grant
    Filed: February 18, 2014
    Date of Patent: June 28, 2016
    Assignee: QUANTUM DEVICES, LLC
    Inventors: Jeffry A. Kelber, Christian Binek, Peter Arnold Bowden, Kirill Belashchenko
  • Patent number: 9366460
    Abstract: A method for refrigeration through voltage-controlled entropy change includes applying a voltage signal to a piezoelectric material to generate strain in the piezoelectric material, generating strain in a magnetic material attached to the piezoelectric material, and generating a change in a temperature of the magnetic material in response to the strain in the magnetic material.
    Type: Grant
    Filed: July 3, 2013
    Date of Patent: June 14, 2016
    Assignee: NUtech Ventures
    Inventor: Christian Binek
  • Publication number: 20150243414
    Abstract: A magnetoelectric composition of boron and chromia is provided. The boron and chromia alloy can contain boron doping of 1%-10% in place of the oxygen in the chromia. The boron-doped chromia exhibits an increased critical temperature while maintaining magnetoelectric characteristics. The composition can be fabricated by depositing chromia in the presence of borane. The boron substitutes oxygen in the chromia, enhancing the exchange energy and thereby increasing Neel temperature.
    Type: Application
    Filed: February 23, 2015
    Publication date: August 27, 2015
    Inventors: CHRISTIAN BINEK, PETER DOWBEN, KIRILL BELASHCHENKO, ALEKSANDER WYSOCKI, SAI MU, MIKE STREET
  • Publication number: 20140231888
    Abstract: The invention relates to a magneto-electric spin-FET including a gate film of chromia and a thin film of a conductive channel material which may be graphene, InP, GaAs, GaSb, PbS, MoS2, WS2, MoSe2, WSe2 and mixtures thereof. The chromia, or other magneto-electric, and conduction channel material are in intimate contact along an interface there between. The resulting magneto-electric device may be voltage-controlled and provide non-volatile memory.
    Type: Application
    Filed: February 18, 2014
    Publication date: August 21, 2014
    Applicants: Quantum Devices, LLC, University of North Texas
    Inventors: Jeffry A. Kelber, Christian Binek, Peter Arnold Bowden, Kirill Belashchenko
  • Publication number: 20140007592
    Abstract: A method for refrigeration through voltage-controlled entropy change includes applying a voltage signal to a piezoelectric material to generate strain in the piezoelectric material, generating strain in a magnetic material attached to the piezoelectric material, and generating a change in a temperature of the magnetic material in response to the strain in the magnetic material.
    Type: Application
    Filed: July 3, 2013
    Publication date: January 9, 2014
    Inventor: Christian Binek