Abstract: Pattern classification based proximity corrections for reticle fabrication are provided. A digital layout of a circuit design and proximity compensation data generated based on measurements of formed reticle elements are obtained. The proximity compensation data includes proximity correction values to correct for proximity effects of a reticle-formation process to form a reticle for use in fabricating a circuit of the circuit design. Based on a pattern classification of one or more patterns in the digital layout of the circuit design, at least one proximity correction is applied to the digital layout of the circuit design to facilitate correcting for proximity effects of the reticle-formation process, the at least one proximity correction being determined based on one or more of the proximity correction values of the obtained proximity compensation data. Additional adjustments to the digital layout are also provided according to aspects described herein.

Abstract: Pattern classification based proximity corrections for reticle fabrication are provided. A digital layout of a circuit design and proximity compensation data generated based on measurements of formed reticle elements are obtained. The proximity compensation data includes proximity correction values to correct for proximity effects of a reticle-formation process to form a reticle for use in fabricating a circuit of the circuit design. Based on a pattern classification of one or more patterns in the digital layout of the circuit design, at least one proximity correction is applied to the digital layout of the circuit design to facilitate correcting for proximity effects of the reticle-formation process, the at least one proximity correction being determined based on one or more of the proximity correction values of the obtained proximity compensation data. Additional adjustments to the digital layout are also provided according to aspects described herein.

Abstract: A method of manufacturing a photomask includes forming a mask pattern with a critical mask feature on a photomask. Shape information which is descriptive for an outline of the critical mask feature is obtained from the photomask. The shape information contains position information identifying the positions of landmarks on the outline relative to each other. The landmarks may indicate local curvature extrema, points of inflexion, sharp bends in the curvature and/or local curvature-change maxima in the outline of the mask feature, respectively. The shape information may enable a shape metrology which is not completely based on rectangular approximations of mask features.

Abstract: A method of manufacturing a photomask includes forming a mask pattern with a critical mask feature on a photomask. Shape information which is descriptive for an outline of the critical mask feature is obtained from the photomask. The shape information contains position information identifying the positions of landmarks on the outline relative to each other. The landmarks may indicate local curvature extrema, points of inflexion, sharp bends in the curvature and/or local curvature-change maxima in the outline of the mask feature, respectively. The shape information may enable a shape metrology which is not completely based on rectangular approximations of mask features.

Abstract: A first exposure dose for a shot area based upon layout data is determined. A correction dose compensating a dose deviation between a first point in time, at which a control unit configured to control a shot time period of a particle beam writing apparatus considers a charged particle beam as having reached a nominal current density, and a second point in time, at which the charged particle beam has actually reached a nominal current density, at a target substrate is determined.

Abstract: A first exposure dose for a shot area based upon layout data is determined. A correction dose compensating a dose deviation between a first point in time, at which a control unit configured to control a shot time period of a particle beam writing apparatus considers a charged particle beam as having reached a nominal current density, and a second point in time, at which the charged particle beam has actually reached a nominal current density, at a target substrate is determined.

Abstract: The aim of the invention is to achieve a rapid, homogeneous application of a liquid with as little force as possible to a substrate. To achieve this, the invention provides a nozzle assembly (22) for applying a liquid to a substrate, said assembly having a nozzle body (26) comprising a plurality of nozzles (36) that are substantially arranged in a line and a guide plate (28) that extends essentially in a vertical direction with a straight lower edge. According to the invention, the nozzles (36) above the lower edge are directed towards the guide plate (28) in such a way that a film of liquid forms on the guide plate (28) and flows over the lower edge (64).