Abstract: The invention relates to a universal measuring adapter system for adapting or contacting semiconductor components in the most varied packages for electrically operating and measuring the same. The pins or contact pads of the package are electrically contacted on the input side in a specially adapted socket, and the socket, on the side of the device (output side), has contact pins whose pin assignment corresponds to the pin assignment of the package contacted inside the socket. The aim of the invention is to create a universal measuring system for adapting or contacting semiconductor components in the most varied packages for electrically operating, measuring and analyzing the same, with which, on the side of the device, the pin numbers can always be tapped at the same location regardless of the package and which is suited for expansion stages with any number of pins and pin configurations.

Abstract: The invention relates to a universal measuring adapter system for adapting or contacting semiconductor components in the most varied packages for electrically operating and measuring the same. The pins or contact pads of the package are electrically contacted on the input side in a specially adapted socket, and the socket, on the side of the device (output side), has contact pins whose pin assignment corresponds to the pin assignment of the package contacted inside the socket. The aim of the invention is to create a universal measuring system for adapting or contacting semiconductor components in the most varied packages for electrically operating, measuring and analyzing the same, with which, on the side of the device, the pin numbers can always be tapped at the same location regardless of the package and which is suited for expansion stages with any number of pins and pin configurations.

Abstract: UV-transparent insulating layers, particularly silicon oxide, over conductive structures on a semiconductor substrate, for example an aluminum interconnect, are locally removed in order to expose interconnects for measuring and testing purposes, for repair, or for other uses. For this purpose, the semiconductor substrate is introduced into a vacuum chamber into which a gaseous, layer-forming compound, particularly a metal carbonyl, is admitted with a carrier gas, and the light of a pulsed UV laser is directed onto the location to be uncovered. No highly toxic or corrosive halogen compounds are required. After the removal of the insulating layer, a metal layer can be locally deposited immediately subsequently thereto on the exposed interconnect from the gaseous metal carbonyl with the same process. A good contact for measuring tips, for example, thus being enabled in a simple way.

Abstract: UV-transparent insulating layers, particularly silicon oxide, overlying conductive structures on a semiconductor substrate, for example an aluminum interconnect, are locally removed in order to uncover the interconnect for measuring and testing purposes, repairs or other uses. For that purpose, the semiconductor substrate is introduced into a vacuum chamber into which a gaseous metal compound, particularly a metal carbonyl, is admitted with a carrier gas, and the light of a pulsed UV laser is directed onto the location to be exposed. No highly toxic or corrosive halogen compounds are required. After the removal of the insulating oxide layer, a metal layer can be immediately subsequently locally deposited onto the exposed interconnect from the gaseous metal carbonyl with the same method. A good contact, for example measuring tips, are thus enabled in a simple way.