Patents by Inventor Christian C. Russ

Christian C. Russ has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7825475
    Abstract: An input/output (I/O) mixed-voltage drive circuit and electrostatic discharge protection device for coupling to an I/O pad. The device includes an NFET device having a gate, a drain, a source and body, the gate adapted for coupling to a pre-drive circuit, the source and the body being coupled to one another and to ground. The device also includes a bipolar junction transistor having a collector, an emitter and a base, the emitter being coupled to the drain of the NFET and the collector being coupled to the I/O pad.
    Type: Grant
    Filed: July 8, 2008
    Date of Patent: November 2, 2010
    Assignees: International Business Machines Corporation, Samsung Electronics Co., Ltd., Infineon Technologies AG
    Inventors: Kiran V. Chatty, David Alvarez, Bong Jae Kwon, Christian C. Russ
  • Publication number: 20100006944
    Abstract: An input/output (I/O) mixed-voltage drive circuit and electrostatic discharge protection device for coupling to an I/O pad. The device includes an NFET device having a gate, a drain, a source and body, the gate adapted for coupling to a pre-drive circuit, the source and the body being coupled to one another and to ground. The device also includes a bipolar junction transistor having a collector, an emitter and a base, the emitter being coupled to the drain of the NFET and the collector being coupled to the I/O pad.
    Type: Application
    Filed: July 8, 2008
    Publication date: January 14, 2010
    Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION, INFINEON TECHNOLOGIES NORTH AMERICA CORP, SAMSUNG ELECTRONICS CO., LTD
    Inventors: Kiran V. Chatty, David Alvarez, Bong Jae Kwon, Christian C. Russ
  • Patent number: 6791122
    Abstract: A silicon controlled rectifier electrostatic discharge protection circuit with external on-chip triggering and compact internal dimensions for fast triggering. The ESD protection circuit includes a silicon controlled rectifier (SCR) having an anode coupled to the protected circuitry and a cathode coupled to ground, where the cathode has at least one high-doped region. At least one trigger-tap is disposed proximate to the at least one high-doped region and an external on-chip triggering device is coupled to the trigger-tap and the protected circuitry.
    Type: Grant
    Filed: November 5, 2001
    Date of Patent: September 14, 2004
    Assignees: Sarnoff Corporation, Sarnoff Europe
    Inventors: Leslie R. Avery, Christian C. Russ, Koen G. M. Verhaege, Markus P. J. Mergens, John Armer
  • Patent number: 6621126
    Abstract: An electrostatic discharge (ESD) protection circuit including a silicon controlled rectifier having a plurality of SCR fingers. Each SCR finger includes at least one interspersed high-doped first region formed within a first lightly doped region. At least one interspersed high-doped second region are formed within a second lightly doped region, where the first and second lightly doped regions are adjacent one another. At least one first trigger-tap is coupled to the second lightly doped region. Additionally, at least one first low-ohmic connection is respectively coupled between the at least one first trigger tap of each SCR finger.
    Type: Grant
    Filed: October 10, 2001
    Date of Patent: September 16, 2003
    Assignee: Sarnoff Corporation
    Inventor: Christian C. Russ
  • Publication number: 20020053704
    Abstract: A silicon controlled rectifier electrostatic discharge protection circuit with external on-chip triggering and compact internal dimensions for fast triggering. The ESD protection circuit includes a silicon controlled rectifier (SCR) having an anode coupled to the protected circuitry and a cathode coupled to ground, where the cathode has at least one high-doped region. At least one trigger-tap is disposed proximate to the at least one high-doped region and an external on-chip triggering device is coupled to the trigger-tap and the protected circuitry.
    Type: Application
    Filed: November 5, 2001
    Publication date: May 9, 2002
    Inventors: Leslie R. Avery, Christian C. Russ, Koen G. M. Verhaege, Markus P. J. Mergens, John Armer
  • Publication number: 20020041007
    Abstract: An electrostatic discharge (ESD) protection circuit including a silicon controlled rectifier having a plurality of SCR fingers. Each SCR finger includes at least one interspersed high-doped first region formed within a first lightly doped region. At least one interspersed high-doped second region are formed within a second lightly doped region, where the first and second lightly doped regions are adjacent one another. At least one first trigger-tap is coupled to the second lightly doped region. Additionally, at least one first low-ohmic connection is respectively coupled between the at least one first trigger tap of each SCR finger.
    Type: Application
    Filed: October 10, 2001
    Publication date: April 11, 2002
    Inventor: Christian C. Russ