Abstract: A method of growth according to which a layer of a material having apertures is made on the surface of a substrate. A material is deposited in each aperture. When this material is liquid, it can absorb the material to be grown. Then, the growth is done in vapor phase. The material of the layer is chosen in such a way that there is neither growth nor nucleation on its surface during the growth in vapor phase. The disclosed method can be applied to the making of crystal whiskers positioned with precision, and to the making of tip type microcathodes.

Abstract: Disclosed is a method for the growing of heteroepitaxial layers of monocrystalline semiconductor materials. To this end, on a substrate made of a material of a first type, there is made a seed of a second type of material. This seed is between a face of the substrate and a confinement layer which defines a confinement space with the face of the substrate. A vapor phase epitaxy of a material of the second type is then effected in the confinement space. This material of the second type grows from the seed in the confinement space. The method can be applied to the manufacture of heterogeneous semiconductor structures and to the three-dimensional integration of semiconductor components.

Abstract: Disclosed is a method for the fabrication of field emission peaks using a monocrystalline substrate with a suitable orientation coated with an insulating layer where square-shaped elementary zones with a suitable orientation with respect to the substrate have been removed. Silicon is deposited by selective epitaxy in these zones. The epitaxial growth of silicon, at high speed parallel to the substrate and at low speed along faces of the substrate at 45.degree. to the substrate, enables the making of pyramidal peaks which, afater being coated with tungsten, form emitting peaks.

Abstract: A method for making a layer of monocrystalline, semiconducting material on a layer of insulating material is disclosed. For this, epitaxial growth is achieved in a cavity closed by layers of dielectric materials, using seeds of monocrystalline, semiconducting material of a substrate. This method thus enables a 3D integration of semiconductor components.