Abstract: A silicon-controlled rectifier includes a semiconductor body including a first main surface, an active device region, a first, a second, a third and a fourth surface contact area at the first main surface and arranged directly one after another along a first lateral direction, wherein the semiconductor body is electrically contacted at each of the first to fourth surface contact areas, and a first, a second, a third and a fourth SCR region, wherein the first and third SCR regions are of a first conductivity type and directly adjoin the first and third surface contact areas, respectively, and wherein the second and fourth SCR regions are of a second conductivity type and directly adjoin the second and fourth surface contact areas, respectively, wherein the first SCR region is electrically connected to the fourth SCR region, and the second SCR region is electrically connected to the third SCR region.

Abstract: A silicon-controlled rectifier (SCR) includes a semiconductor body including a first main surface, an active device region, a first, a second, a third and a fourth surface contact area at the first main surface and arranged directly one after another along a first lateral direction, wherein the semiconductor body is electrically contacted at each of the first to fourth surface contact areas, and a first, a second, a third and a fourth SCR region, wherein the first and third SCR regions are of a first conductivity type and directly adjoin the first and third surface contact areas, respectively, and wherein the second and fourth SCR regions are of a second conductivity type and directly adjoin the second and fourth surface contact areas, respectively, wherein the first SCR region is electrically connected to the fourth SCR region, and the second SCR region is electrically connected to the third SCR region.

Abstract: The described techniques address issues associated with electrostatic discharge (ESD) protection for multi-die integrated circuits (ICs). The techniques include the use of two or more semiconductor dies within a multi-die IC, which may include a first semiconductor die without ESD protection but with full ESD exposure. The first semiconductor receives ESD protection via a second semiconductor die that is integrated as part of the same package with the first semiconductor die. The second semiconductor die may be electrically more remote from ESD-exposed pins compared to the first semiconductor die. The first semiconductor die may include integrated passive devices. The second semiconductor die enables ESD protection for both semiconductor dies in the same integrated IC package.

Abstract: In accordance with an embodiment, a semiconductor device includes: an n-doped region disposed over an insulating layer; a p-doped region disposed over the insulating layer adjacent to the n-doped region, where an interface between the n-doped region and the p-doped region form a first diode junction; a plurality of segmented p-type anode regions disposed over the insulating layer, each of the plurality of segmented p-type anode regions being surrounded by the n-doped region, where a doping concentration of the plurality of segmented p-type anode regions is greater than a doping concentration of the p-doped region; and a plurality of segmented n-type cathode regions disposed over the insulating layer. Each of the plurality of segmented n-type cathode regions are surrounded by the p-doped region, where a doping concentration of the plurality of segmented n-type cathode regions is greater than a doping concentration of the n-doped region.

Abstract: A silicon-controlled rectifier (SCR) includes a semiconductor body including a first main surface, an active device region, a first, a second, a third and a fourth surface contact area at the first main surface and arranged directly one after another along a first lateral direction, wherein the semiconductor body is electrically contacted at each of the first to fourth surface contact areas, and a first, a second, a third and a fourth SCR region, wherein the first and third SCR regions are of a first conductivity type and directly adjoin the first and third surface contact areas, respectively, and wherein the second and fourth SCR regions are of a second conductivity type and directly adjoin the second and fourth surface contact areas, respectively, wherein the first SCR region is electrically connected to the fourth SCR region, and the second SCR region is electrically connected to the third SCR region.

Abstract: A silicon-controlled rectifier (SCR) includes a semiconductor body including a first main surface and an active device region. First through fourth surface contact areas at the first main surface are arranged directly one after another along a lateral direction. The semiconductor body is electrically contacted at each surface contact area. First and third SCR regions of a first conductivity type directly adjoin the first and third surface contact areas, respectively. Second and fourth SCR regions of a second conductivity type directly adjoin the second and fourth surface contact areas, respectively. The second SCR region at least partially overlaps a first well region of the first conductivity type at the first main surface. The first SCR region at most partially overlaps the first well region at the first main surface, and is electrically connected to the second SCR region. The third SCR region is electrically connected to the fourth SCR region.

Abstract: An embodiment of a silicon controlled rectifier (SCR) includes a semiconductor body, an active device region, and a device isolation region configured to electrically insulate the active device region from neighboring active device regions. First SCR regions and a second SCR region of a first conductivity type are in the active device region. A first pn-junction or Schottky junction is formed at an interface between the first SCR regions and the second SCR region. A first plurality of the first SCR regions and sub-regions of the second SCR region are alternately arranged and directly adjoin one another. A second pn-junction is formed at an interface between the second SCR region and a third SCR region of a second conductivity type. A third pn-junction is formed at an interface between the third SCR region and a fourth SCR region of the first conductivity type.

Abstract: A silicon-controlled rectifier (SCR) includes a semiconductor body including a first main surface and an active device region. First through fourth surface contact areas at the first main surface are arranged directly one after another along a lateral direction. The semiconductor body is electrically contacted at each surface contact area. First and third SCR regions of a first conductivity type directly adjoin the first and third surface contact areas, respectively. Second and fourth SCR regions of a second conductivity type directly adjoin the second and fourth surface contact areas, respectively. The second SCR region at least partially overlaps a first well region of the first conductivity type at the first main surface. The first SCR region at most partially overlaps the first well region at the first main surface, and is electrically connected to the second SCR region. The third SCR region is electrically connected to the fourth SCR region.

Abstract: A compressor rotor blade for an axial-type compressor has a blade profile having a transonic section and a profile section which extends in the transonic section and has concave and convex suction-side regions on the suction side, the convex suction-side region arranged downstream of the concave suction-side region, and has convex and concave pressure-side regions on the pressure side, the concave pressure-side region arranged downstream of the convex pressure-side region. Curvature progressions on the pressure side and on the suction side are both applied in a continuous manner over a profile chord of the profile section, the positions of the minimum values of the curvature progressions deviate from each other by not more than 10% of the length of the profile chord, and the positions of the maximum values of the curvature progressions deviate from each other by not more than 10% of the length of the profile chord.

Abstract: An embodiment of a silicon controlled rectifier (SCR) includes a semiconductor body, an active device region, and a device isolation region configured to electrically insulate the active device region from neighboring active device regions. First SCR regions and a second SCR region of a first conductivity type are in the active device region. A first pn-junction or Schottky junction is formed at an interface between the first SCR regions and the second SCR region. A first plurality of the first SCR regions and sub-regions of the second SCR region are alternately arranged and directly adjoin one another. A second pn-junction is formed at an interface between the second SCR region and a third SCR region of a second conductivity type. A third pn-junction is formed at an interface between the third SCR region and a fourth SCR region of the first conductivity type.

Abstract: Described is an apparatus which comprises: a pad; a first transistor coupled in series with a second transistor and coupled to the pad; and a self-biasing circuit to bias the first transistor such that the first transistor is to be weakly biased during an electrostatic discharge (ESD) event. Described is also an apparatus which comprises: a first transistor; and a first local ballast resistor formed of a trench contact (TCN) layer, the first local ballast resistor having a first terminal coupled to either the drain or source terminal of the first transistor.

Abstract: A compressor rotor blade for an axial-type compressor has a blade profile having a transonic section and a profile section which extends in the transonic section and has concave and convex suction-side regions on the suction side, the convex suction-side region arranged downstream of the concave suction-side region, and has convex and concave pressure-side regions on the pressure side, the concave pressure-side region arranged downstream of the convex pressure-side region. Curvature progressions on the pressure side and on the suction side are both applied in a continuous manner over a profile chord of the profile section, the positions of the minimum values of the curvature progressions deviate from each other by not more than 10% of the length of the profile chord, and the positions of the maximum values of the curvature progressions deviate from each other by not more than 10% of the length of the profile chord.

Abstract: A method for profiling a replacement blade for an axial turbomachine is provided. The method includes: measuring hub contour geometry and housing contour geometry of the flow channel of the old blade and the axial position of the centre of gravity of the blade aerofoil of the old blade; laying out geometry of the blade aerofoil of the replacement blade, the blade aerofoil having a rearward sweep on its leading edge; defining a region of the blade aerofoil near the mounting and in which positive influence of the rearward sweep on the degree of stage efficiency is rated as low; and axially displacing the replacement blade aerofoil section arranged outside this region in the upstream direction, until the axial position of the centre of gravity of the blade aerofoil of the replacement blade coincides with the old blade.

Abstract: Described is an apparatus which comprises: a pad; a first transistor coupled in series with a second transistor and coupled to the pad; and a self-biasing circuit to bias the first transistor such that the first transistor is to be weakly biased during an electrostatic discharge (ESD) event. Described is also an apparatus which comprises: a first transistor; and a first local ballast resistor formed of a trench contact (TCN) layer, the first local ballast resistor having a first terminal coupled to either the drain or source terminal of the first transistor.

Abstract: The invention relates to a compressor blade of a compressor which, along a main axis, comprises a blade base, a platform area and an adjacent blade profile having a profile tip. The blade profile is configured by a convex wall at the suction end and a concave wall at the pressure end opposite the wall at the suction end. These surfaces extend, with respect to a flow medium, from a leading edge to a trailing edge, a profile center line extending in the center between the two. A front face is arranged on the profile tip at an angle to the main axis, a sealing lip at least partially extending from the leading edge to the trailing edge and the blade profile including the sealing lip having a blade profile height extending in the direction of the main axis. In order to allow for an inexpensive compressor blade having improved aerodynamic properties and a modified sealing lip while having the same sealing properties, the height of the sealing lip is less than 2 percent of the height of the blade profile.

Abstract: A compressor blade for an axially permeated compressor, preferably of a stationary gas turbine is provided. The camber line of the blade tip side profile of the blade of the compressor blade includes at least two inflection points for reducing radial gap losses. By means of two inflection points, there is a concavely designed suction side contour segment in a segment from 35% to 50% for the suction side contour, and a convexly implemented pressure side contour segment for the pressure side contour. It is possible by means of the geometry to generate low-loss gap vortices, in order to increase the overall efficiency of an axial compressor including the compressor blades.

Abstract: A method for profiling a replacement blade for an axial turbomachine is provided. The method includes: measuring hub contour geometry and housing contour geometry of the flow channel of the old blade and the axial position of the centre of gravity of the blade aerofoil of the old blade; laying out geometry of the blade aerofoil of the replacement blade, the blade aerofoil having a rearward sweep on its leading edge; defining a region of the blade aerofoil near the mounting and in which positive influence of the rearward sweep on the degree of stage efficiency is rated as low; and axially displacing the replacement blade aerofoil section arranged outside this region in the upstream direction, until the axial position of the centre of gravity of the blade aerofoil of the replacement blade coincides with the old blade.

Abstract: An arrangement with a ring diffuser for an axial turbomachine, for example for a gas turbine, is provided. The ring diffuser includes an outer wall and with an inner wall coaxial thereto, between which a diffuser duct extends in ring form along an axial extent so as to diverge from an inflow-side end to an outflow-side end, the inner wall and the outer wall in each case including a wall surface delimiting the diffuser duct. In order to specify a diffuser duct which is adapted to an inflow uneven along the circumference and by means of which a specially efficient conversion of kinetic energy into static energy is possible, the wall surface which delimits the diffuser duct on the inlet side is rotationally asymmetrical.

Abstract: A ring diffuser for an axial turbomachine is provided. The ring diffuser includes an outer wall and an inner wall coaxial thereto, between which a diffuser channel extends in a ring shape along an axial extension from an inflow-side end diverging to an outflow-side end, wherein the inner wall and the outer wall each include a wall surface bounding the diffuser channel. In order to specify a diffuser channel that is tailored to an inflow that is uneven along the circumference and that facilitates a particularly efficient conversion of kinetic energy into static energy, a rotationally asymmetric wall surface bounding the diffuser channel on the inlet side is provided.

Abstract: An axial turbomachine including a rotor blade cascade is provided. The rotor blade cascade includes rotor blades each including front edge, a radially outer free blade tip and an annular enclosure enclosing the rotor blade cascade with an annulus inner side by means of which the annular enclosure is arranged directly adjacent to the blade tips to give a radial gap between the enveloping ends of the blade tips and the annulus inner side. The rotor blades include a radial projection in the region of the front edge on the blade tip and the annular enclosure has an annular radial recess in the annulus inner side, arranged at a radial distance from the ends of the blade tips, such that in the main flow direction of the axial turbomachine the line of the radial projections on the side facing the radial gap matches the line of the radial recess.