Abstract: A reflection mask that includes a structure (20) for lithographically transferring a layout onto a target substrate, in particular for use in EUV lithography, and a reflective multilayer structure (11). At least one flare reduction layer (13?, 17) is at least partly arranged on a bright field of the multilayer structure (11).

Abstract: The present invention relates to a method for removing defect material in a transmissive region of a lithography mask having transmissive carrier material and absorber material. A first method step involves removing defective material and absorber material in a processing region. A second method step involves applying an absorbent material in an outer region, the outer region depending on the partial region of the processing region that was previously covered with absorber material.

Abstract: A reflection mask that includes a structure (20) for lithographically transferring a layout onto a target substrate, in particular for use in EUV lithography, and a reflective multilayer structure (11). At least one flare reduction layer (13?, 17) is at least partly arranged on a bright field of the multilayer structure (11).

Abstract: The whole-area defect inspection of masks is made possible by interconnecting two otherwise independent defect inspection systems via a powerful bus system or interface. As a result, two masks that are identical, at least in sub-areas, can be inspected and compared in parallel and in real time. It is not necessary to temporarily store large quantities of data. The running defect inspection can be interrupted flexibly and continued again. This implementation of mask-to-mask inspection takes into account that simulation algorithms for die-to-database inspection of future mask technology, for example, alternating phase masks, EUV masks, stencil masks, and so on are not available in good time. In addition, the inspection time is reduced considerably.

Abstract: Lithography mask having a structure for the fabrication of semiconductor components, in particular memory components, for a direction-dependent exposure device, featuring at least one auxiliary structure (1) for minimizing scattered light, the auxiliary structure (1) essentially being arranged in a low-resolution exposure direction of the direction-dependent exposure device (11, 11a, 11b) for the mask (10, 10a, 10b). A means for reducing scattered light is thus created by the auxiliary structure in a simple manner.

Abstract: To avoid charging effects of isolated chromium structures during the structuring of a second level of attenuated phase shift masks, a previous chromium etching step is preferably carried out in a time-controlled manner, so that a residual chromium layer, which is approximately 5-20 nm thick, remains at the bottom of the columns. The residual chromium layer connects the chromium webs, which are otherwise isolated, in a conductive manner and therefore dissipates the charge to the outside during the subsequent structuring by an electron beam. In the process steps that follow the exposure of the second level—preferably of alternating attenuated phase shift masks—two further chromium etching steps can be carried out, with a small etching depth in each case in the columns provided for the quartz etching of different phase shift.

Abstract: To avoid charging effects of isolated chromium structures during the structuring of a second level of attenuated phase shift masks, a previous chromium etching step is preferably carried out in a time-controlled manner, so that a residual chromium layer, which is approximately 5-20 nm thick, remains at the bottom of the columns. The residual chromium layer connects the chromium webs, which are otherwise isolated, in a conductive manner and therefore dissipates the charge to the outside during the subsequent structuring by an electron beam. In the process steps that follow the exposure of the second level—preferably of alternating attenuated phase shift masks—two further chromium etching steps can be carried out, with a small etching depth in each case in the columns provided for the quartz etching of different phase shift.

Abstract: The whole-area defect inspection of masks is made possible by interconnecting two otherwise independent defect inspection systems via a powerful bus system or interface. As a result, two masks that are identical, at least in sub-areas, can be inspected and compared in parallel and in real time. It is not necessary to temporarily store large quantities of data. The running defect inspection can be interrupted flexibly and continued again. This implementation of mask-to-mask inspection takes into account that simulation algorithms for die-to-database inspection of future mask technology, for example, alternating phase masks, EUV masks, stencil masks, and so on are not available in good time. In addition, the inspection time is reduced considerably.