Patents by Inventor Christian Dufaza

Christian Dufaza has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8228222
    Abstract: The disclosure relates to an amplifier comprising a digital delta-sigma modulator, a quantifier receiving a signal supplied by a delta-sigma stage and supplying a quantified signal, and a power circuit supplying an output signal. The device comprises N state loops of a first type configured to send the output signal to adders of N delta-sigma stages of lower rank, each state loop of the first type comprising an analog low-pass filter for supplying a filtered output signal, and an analog to digital converter for supplying a digital filtered output signal.
    Type: Grant
    Filed: December 15, 2010
    Date of Patent: July 24, 2012
    Assignees: Universite de Provence Aix-Marseillei, Centre National de la Recherche Scentifique, Primachip SAS
    Inventors: Hassan Ihs, Christian Dufaza
  • Publication number: 20110148677
    Abstract: The disclosure relates to an amplifier comprising a digital delta-sigma modulator, a quantifier receiving a signal supplied by a delta-sigma stage and supplying a quantified signal, and a power circuit supplying an output signal. The device comprises N state loops of a first type configured to send the output signal to adders of N delta-sigma stages of lower rank, each state loop of the first type comprising an analog low-pass filter for supplying a filtered output signal, and an analog to digital converter for supplying a digital filtered output signal.
    Type: Application
    Filed: December 15, 2010
    Publication date: June 23, 2011
    Applicants: UNIVERSITE DE PROVENCE AIX-MARSEILLE I, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, PRIMACHIP SAS
    Inventors: Hassan Ihs, Christian Dufaza
  • Patent number: 6377115
    Abstract: A process and an integrated circuit are intended for obtaining an adjustable electrical resistance, in which a first voltage is applied to an integrated MOS transistor on its source, its gate and its substrate, and a second voltage is applied on its drain, the first and second voltages being able to initiate a breakdown of the MOS transistor by: avalanche of the drain/substrate junction; biasing of the parasitic bipolar transistor of the MOS transistor; irreversible breakdown of the drain/substrate junction; and shorting between the drain and the source.
    Type: Grant
    Filed: October 4, 2000
    Date of Patent: April 23, 2002
    Assignee: STMicroelectronics S.A.
    Inventors: Christophe Forel, Sebastien Laville, Christian Dufaza, Daniel Auvergne