Abstract: An optoelectronic device may include an optoelectronic semiconductor chip that is configured to emit electromagnetic radiation. The chip may include a first semiconductor layer, a second semiconductor layer, first and second current spreading structures, and a plurality of electrical contact elements. The first current spreading layer may be arranged on a side of the second semiconductor layer facing away from the first semiconductor layer. The plurality of electrical contact elements may electrically connect the first semiconductor layer to the first current spreading layer. The second current spreading layer may be electrically connected to the second semiconductor layer. The second current spreading layer may be arranged between the first current spreading layer and the second semiconductor layer where an insulating layer insulates a first electrical contact element and a second electrical contact element from the second current spreading layer.

Abstract: An optoelectronic semiconductor component may include a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and an active zone, wherein the first semiconductor layer and the second semiconductor layer are patterned to form a mesa so that parts of the second semiconductor layer are not covered by the first semiconductor layer and a portion of the active zone is exposed in the area of a mesa flank. The optoelectronic semiconductor component may include a passivation layer arranged over parts of the first semiconductor layer and over parts of the second semiconductor layer and over the exposed portion of the active zone. The optoelectronic semiconductor component furthermore contains a first metal layer and a second metal layer. The second metal layer covers the passivation layer in the area of the mesa flank.

Abstract: An optoelectronic semiconductor device includes a support element having a first main surface, an optoelectronic semiconductor chip which is arranged over the support element and adjacent to the first main surface, and an electrical contact element for contacting the optoelectronic semiconductor chip. The electric contact element is arranged in an opening formed in the first main surface of the support element.

Abstract: A method for producing an output coupling element and an optoelectronic component are disclosed. In an embodiment, a method includes providing an inorganic dielectric element with a surface in a chamber, wherein the inorganic dielectric element is rotatable in the chamber, providing a structuring agent comprising water and ozone and introducing the structuring agent into the chamber so that the structuring agent contacts the surface of the inorganic dielectric element thereby producing a roughening in the surface.

Abstract: A method for producing an output coupling element and an optoelectronic component are disclosed. In an embodiment, a method includes providing an inorganic dielectric element with a surface in a chamber, wherein the inorganic dielectric element rotates in the chamber during operation and providing a structuring agent comprising water and ozone and introducing the structuring agent into the chamber so that the structuring agent contacts the surface of the inorganic dielectric element and a roughening is produced in the surface, wherein the inorganic dielectric element comprises aluminum oxide.

Abstract: A method for producing an output coupling element and an optoelectronic component are disclosed. In an embodiment, a method includes providing an inorganic dielectric element with a surface in a chamber, wherein the inorganic dielectric element rotates in the chamber during operation and providing a structuring agent comprising water and ozone and introducing the structuring agent into the chamber so that the structuring agent contacts the surface of the inorganic dielectric element and a roughening is produced in the surface, wherein the inorganic dielectric element comprises aluminum oxide.

Abstract: According to the present disclosure, optoelectronic semiconductor chip includes at least one n-doped semiconductor layer, at least one p-doped semiconductor layer and one active layer arranged between the at least one n-doped semiconductor layer and the at least one p-doped semiconductor layer. The p-doped semiconductor layer is electrically contacted by means of a first metallic connection layer, and a reflection-enhancing dielectric layer sequence is arranged between the p-doped semiconductor layer and the first connection layer, which dielectric layer sequence includes a plurality of dielectric layers with different refractive indices.

Abstract: According to the present disclosure, optoelectronic semiconductor chip includes at least one n-doped semiconductor layer, at least one p-doped semiconductor layer and one active layer arranged between the at least one n-doped semiconductor layer and the at least one p-doped semiconductor layer. The p-doped semiconductor layer is electrically contacted by means of a first metallic connection layer, and a reflection-enhancing dielectric layer sequence is arranged between the p-doped semiconductor layer and the first connection layer, which dielectric layer sequence includes a plurality of dielectric layers with different refractive indices.

Abstract: An electrical contact structure (10) for a semiconductor component (100) is specified, comprising a transparent electrically conductive contact layer (1), on which a first metallic contact layer (2) is applied, a second metallic contact layer (3), which completely covers the first metallic contact layer (2), and a separating layer (4), which is arranged between the transparent electrically conductive contact layer (1) and the second metallic contact layer (3) and which separates the second metallic contact layer (3) from the transparent electrically conductive contact layer (1). Furthermore, a semiconductor component (100) comprising a contact structure (10) is specified.

Abstract: An optoelectronic semiconductor device has a semiconductor body including a semiconductor layer sequence with an active region that generates radiation, a semiconductor layer and a further semiconductor layer, wherein the active region is arranged between the semiconductor layer and the further semiconductor layer, a current spreading layer is arranged on a radiation exit face of the semiconductor body, the current spreading layer connects electrically conductively with a contact structure for external electrical contacting of the semiconductor layer, in a plan view of the semiconductor device the current spreading layer adjoins the semiconductor layer in a connection region, and the current spreading layer includes a patterning with a plurality of recesses through which radiation exits the semiconductor device during operation.

Abstract: According to the present disclosure, optoelectronic semiconductor chip includes at least one n-doped semiconductor layer, at least one p-doped semiconductor layer and one active layer arranged between the at least one n-doped semiconductor layer and the at least one p-doped semiconductor layer. The p-doped semiconductor layer is electrically contacted by means of a first metallic connection layer, and a reflection-enhancing dielectric layer sequence is arranged between the p-doped semiconductor layer and the first connection layer, which dielectric layer sequence includes a plurality of dielectric layers with different refractive indices.

Abstract: An electrical contact structure (10) for a semiconductor component (100) is specified, comprising a transparent electrically conductive contact layer (1), on which a first metallic contact layer (2) is applied, a second metallic contact layer (3), which completely covers the first metallic contact layer (2), and a separating layer (4), which is arranged between the transparent electrically conductive contact layer (1) and the second metallic contact layer (3) and which separates the second metallic contact layer (3) from the transparent electrically conductive contact layer (1). Furthermore, a semiconductor component (100) comprising a contact structure (10) is specified.

Abstract: An optoelectronic semiconductor device has a semiconductor body including a semiconductor layer sequence with an active region that generates radiation, a semiconductor layer and a further semiconductor layer, wherein the active region is arranged between the semiconductor layer and the further semiconductor layer, a current spreading layer is arranged on a radiation exit face of the semiconductor body, the current spreading layer connects electrically conductively with a contact structure for external electrical contacting of the semiconductor layer, in a plan view of the semiconductor device the current spreading layer adjoins the semiconductor layer in a connection region, and the current spreading layer includes a patterning with a plurality of recesses through which radiation exits the semiconductor device during operation.

Abstract: An optoelectronic semiconductor chip, comprising a first contact location (1) and a second contact location (2), and a reflective layer (3), which is directly electrically conductively connected to the second contact location. The reflective layer contains a metal that tends toward migration, and the reflective layer is arranged in such a way that a migration path (4) for the metal can form between the second and the first contact location. A means (6) which, during operation of the semiconductor chip, forms an electric field that counteracts the migration of the metal is provided at the semiconductor chip.

Abstract: An optoelectronic semiconductor chip is specified, comprising a first contact location (1) and a second contact location (2), and a reflective layer (3), which is directly electrically conductively connected to the second contact location. The reflective layer contains a metal that tends toward migration, and the reflective layer is arranged in such a way that a migration path (4) for the metal can form between the second and the first contact location. A means (6) which, during operation of the semiconductor chip, forms an electric field that counteracts the migration of the metal is provided at the semiconductor chip.

Abstract: A method for producing a coconut water beverage having a pH below 4.5 by adding a food grade acid to coconut water. The method coverts coconut water from a low-acid food to a high-acid food which allows the coconut water to be subjected to less severe commercial sterilization processing and preserves the natural taste and aroma of the coconut water. The present invention is also directed to a blended beverage comprising coconut water and fruit juice and having natural isotonic properties.

Abstract: A method for producing a coconut water beverage having a pH below 4.5 by adding a food grade acid to coconut water. The method coverts coconut water from a low-acid food to a high-acid food which allows the coconut water to be subjected to less severe commercial sterilization processing and preserves the natural taste and aroma of the coconut water. The present invention is also directed to a blended beverage comprising coconut water and fruit juice and having natural isotonic properties.