Abstract: An electrochromic device for use in the field of optical lenses. The device includes a substrate having an expanse and an edge region. A first electrode layer is coated on the expanse and extends substantially across the expanse and into the edge region. An electrochromic layer is coated on the first electrode so that the first electrode layer physically isolates the electrochromic layer from the substrate. A second electrode layer is coated on the electrochromic layer, so that the electrochromic layer physically isolates the second electrode layer from the first electrode layer. A first contact is electrically connected to the first electrode layer. An isolative barrier is coated on the first electrode layer in the edge region. A second contact is electrically connected to the second electrode layer. Alternatively, an isolative channel is formed in the second electrode layer to electrically isolate the first electrode layer from the second electrode layer.

Abstract: A TFEL structure is disclosed that includes first and second electrode layers sandwiching a TFEL stack including at least one insulator layer and a novel three layer laminate structure. The three-layer laminate structure includes an alkaline earth thiogallate phosphor layer, a nucleating layer and an injection layer. The nucleating layer lies between the phosphor layer and the injection layer. The injection layer provides a charge injection function through the nucleating layer for the thiogallate phosphor layer which is of high crystallinity at its interface with the nucleating layer. A preferred injection layer includes indium, for example as the metal or as indium tin oxide. The best material for the nucleating layer is zinc sulfide.

Abstract: An improved gas distribution scheme for a multi-wafer radially injected convergent horizontal epitaxial reactor which includes two outer distribution rings, an outer injection ring, an annular susceptor, and a central exhaust tube. The converging path of the gas stream from the outer injection ring into the central exhaust tube compensates for depletion of the reactant gases along the substrate. The injector ring has a large number of evenly spaced diffuser orifices that allow the gas to expand into the growth chamber in a laminar flow pattern. The design is compact, includes the possibility of water cooling of the quartz during deposition, and allows for a resistive bakeout furnace which can be used to etch and clean the reaction chamber between runs.

Abstract: A wavelength resonant semiconductor gain medium is disclosed. The essential feature of this medium is a multiplicity of quantum-well gain regions separated by semiconductor spacer regions of higher bandgap. Each period of this medium consisting of one quantum-well region and the adjacent spacer region is chosen such that the total width is equal to an integral multiple of 1/2 the wavelength in the medium of the radiation with which the medium is interacting. Optical, electron-beam and electrical injection pumping of the medium is disclosed. This medium may be used as a laser medium for single devices or arrays either with or without reflectors, which may be either semiconductor or external.