Abstract: The present invention relates to methods, to an apparatus and to a computer program for processing of an object for lithography. A method of processing an object for lithography comprises: providing a first gas comprising first molecules; providing a particle beam in a working region of the object for removal of a first material in the working region, based at least partly on the first gas. The first material may comprise chromium and nitrogen. In addition, the first material may comprise at least 5 atomic percent of nitrogen, preferably at least 10 atomic percent of nitrogen, especially preferably at least 20 atomic percent of nitrogen.

Abstract: The present application relates to an apparatus and to a method for removing at least a single particulate from a substrate, especially an optical element for extreme ultraviolet (EUV) photolithography, wherein the apparatus comprises: (a) an analysis unit designed to determine at least one constituent of a material composition of the at least one single particulate; and (b) at least one gas injection system designed to provide a gas matched to the particular constituent in an environment of the at least one single particulate; (c) wherein the matched gas contributes to removing the at least one single particulate from the substrate.

Abstract: A method for performing an n-Hamming distance search is provided. The database comprises a plurality of records and an indexed storage. Each record comprises a record string associated with n+1 record hash values stored in an index. The method comprises partitioning a query string into n+1 query partitions. The n+1 query partitions are pairwise disjoint. A hash value is created for each query partition resulting in n+1 query hash values. Records having at least one record hash value equal to one of the n+1 query hash values are identified. The identified records are searched for records fulfilling a search condition. The search condition is that the record strings have a Hamming distance smaller than or equal to n with respect to the query string or a more limited search condition.

Abstract: The present invention refers to a method for determining at least one optical property of at least one deposition material used for a lithographic mask which comprises the steps: (a) determining a height value of the at least one deposition material deposited on a substrate for each of at least three different deposition heights of the deposition material, wherein the at least three different deposition heights are in a nanoscale range; (b) determining a reflectivity value of the at least one deposition material for each of the at least three different deposition heights, wherein determining the reflectivity values comprises using photons generated by an optical inspection system; and (c) determining the at least one optical property of the at least one deposition material by adapting simulated reflectivity data to the measured reflectivity values for each of the at least three different deposition heights.

Abstract: The present application relates to an apparatus and to a method for removing at least a single particulate from a substrate, especially an optical element for extreme ultraviolet (EUV) photolithography, wherein the apparatus comprises: (a) an analysis unit designed to determine at least one constituent of a material composition of the at least one single particulate; and (b) at least one gas injection system designed to provide a gas matched to the particular constituent in an environment of the at least one single particulate; (c) wherein the matched gas contributes to removing the at least one single particulate from the substrate.

Abstract: The present disclosure relates to methods, to an apparatus and to a computer program for processing of a lithography object. More particularly, the present invention relates to a method for removing a material, to a corresponding apparatus and to a method for lithographic processing of a wafer, and to a computer program for performing the methods. A method for processing a lithography object comprises, for example: providing a first gas comprising first molecules; providing a particle beam in a working region of the object for removal of a first material in the working region based at least partly on the first gas, wherein the first material comprises ruthenium.

Abstract: The present invention pertains to methods, apparatuses and computer programs for processing an object for lithography. A method for processing an object for lithography comprises: (a) providing a first gas; (b) providing a second gas, the second gas including second molecules capable of performing an inversion oscillation; (c) providing a particle beam in a working region of the object for production of a deposition material in the working region based at least partly on the first gas and the second gas. The second gas is provided with a gas flow rate of less than 5 sccm, preferably less than 2 sccm, more preferably less than 0.5 sccm.

Abstract: Method for the particle beam-induced etching of a lithography mask, more particularly a non-transmissive EUV lithography mask, having the steps of: a) providing the lithography mask in a process atmosphere, b) beaming a focused particle beam onto a target position on the lithography mask, c) supplying at least one first gaseous component to the target position in the process atmosphere, where the first gaseous component can be converted by activation into a reactive form, where the reactive form reacts with a material of the lithography mask to form a volatile compound, and d) supplying at least one second gaseous component to the target position in the process atmosphere, where the second gaseous component under predetermined process conditions with exposure to the particle beam forms a deposit comprising a compound of silicon with oxygen, nitrogen and/or carbon.

Abstract: The present application relates to an apparatus and to a method for removing at least a single particulate from a substrate, especially an optical element for extreme ultraviolet (EUV) photolithography, wherein the apparatus comprises: (a) an analysis unit designed to determine at least one constituent of a material composition of the at least one single particulate; and (b) at least one gas injection system designed to provide a gas matched to the particular constituent in an environment of the at least one single particulate; (c) wherein the matched gas contributes to removing the at least one single particulate from the substrate.

Abstract: A radiation source for a lithographic apparatus, in particular a laser-produced plasma source includes a fan unit surrounding but not obstructing the collected radiation beam that is operated to generate a flow in a buffer gas away from the optical axis. The fan unit can include a plurality of flat or curved blades generally parallel to the optical axis and driven to rotate about the optical axis.

Abstract: A radiation source for a lithographic apparatus, in particular a laser-produced plasma source includes a fan unit surrounding but not obstructing the collected radiation beam that is operated to generate a flow in a buffer gas away from the optical axis. The fan unit can include a plurality of flat or curved blades generally parallel to the optical axis and driven to rotate about the optical axis.

Abstract: A radiation source for a lithographic apparatus, in particular a laser-produced plasma source includes a fan unit surrounding but not obstructing the collected radiation beam that is operated to generate a flow in a buffer gas away from the optical axis. The fan unit can include a plurality of flat or curved blades generally parallel to the optical axis and driven to rotate about the optical axis.

Abstract: A radiation source for a lithographic apparatus, in particular a laser-produced plasma source includes a fan unit surrounding but not obstructing the collected radiation beam that is operated to generate a flow in a buffer gas away from the optical axis. The fan unit can include a plurality of flat or curved blades generally parallel to the optical axis and driven to rotate about the optical axis.

Abstract: A computer implemented method of effecting a merchant funded reward when a consumer purchases goods and/or services from a merchant using an electronic payment, including a processor executing instruction code causing collection of transaction details of the consumer purchase, processing of the transaction details to calculate any associated reward, and notification of the entire reward to be collected from the merchant.

Abstract: Embodiments of the present teachings relate to systems and methods for testing and analyzing the security of a target computing device. The method can include providing, to a server via a network, a security tool operable to be associated with a webpage accessible by a target computing device through the server, wherein security tool is operable to be executable by the target computing device and operable to collect one or more security metrics of the target computing device; receiving, from the server, the one or more security metrics of the target computing device; comparing the one or more security metrics with a security vulnerability database; and determining a level of security vulnerability for the target computing device based on comparing the one or more security metrics with the security vulnerability database.