Patents by Inventor Christian Fretigny

Christian Fretigny has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8906780
    Abstract: A method for transferring a thin layer of monocrystalline silicon from a free face of a monocrystalline silicon donor substrate having a thickness greater than that of the thin layer includes implanting ions through the free face to form a buried brittle layer in the silicon, using a polymer layer, bonding the donor substrate, by the free face, to a receiver substrate, and fracturing the thin layer from the donor substrate at the buried brittle layer by thermal fracture processing, and selecting conditions of implantation such that a thickness of the thin layer is smaller than 10 micrometers, and a thickness of the polymer layer is below a critical threshold defined as a function of energy and dose of the implantation, the critical threshold being less than or equal to the lesser of 500 nanometers and the thin layer's thickness.
    Type: Grant
    Filed: June 21, 2011
    Date of Patent: December 9, 2014
    Assignees: Commissariat a l'energie atomique et aux energies alternatives, Centre National de la Recherche Scientifique
    Inventors: Maxime Argoud, Hubert Moriceau, Christian Fretigny
  • Publication number: 20130092320
    Abstract: A method for transferring a thin layer of monocrystalline silicon from a free face of a monocrystalline silicon donor substrate having a thickness greater than that of the thin layer includes implanting ions through the free face to form a buried brittle layer in the silicon, using a polymer layer, bonding the donor substrate, by the free face, to a receiver substrate, and fracturing the thin layer from the donor substrate at the buried brittle layer by thermal fracture processing, and selecting conditions of implantation such that a thickness of the thin layer is smaller than 10 micrometers, and a thickness of the polymer layer is below a critical threshold defined as a function of energy and dose of the implantation, the critical threshold being less than or equal to the lesser of 500 nanometers and the thin layer's thickness.
    Type: Application
    Filed: June 21, 2011
    Publication date: April 18, 2013
    Inventors: Maxime Argoud, Hubert Moriceau, Christian Fretigny
  • Patent number: 6349591
    Abstract: A device for controlling the interaction of a tip and a sample includes a deformable element carrying the tip and means for positioning the tip with respect to the sample. The device also includes at lest two electrodes for creating an electrical field that exerts a force. The deformable element is preferably elastically deformable and includes advantageously a cantilever. According to a method for controlling the interaction of a tip and a sample, the tip carried by a deformable element is positioned with respect to the sample and the interaction of the tip and the sample is controlled by creating an electric field using a voltage between at least two electrodes. This electrical field exerts a force on the tip. Applications are to atomic force microscopy (AFM) and to nano-indentation measurements.
    Type: Grant
    Filed: January 13, 2000
    Date of Patent: February 26, 2002
    Assignee: Universite Pierre & Marie Curie
    Inventors: Christian Fretigny, Denis Michel, Benjamin Brocart, Charlotte Basire