Abstract: Alumina having a pore structure characterized by the absence of macropores, no more than 5% of the total pore volume in pores greater than 350 ?, a high pore volume (greater than 0.8 cc/g measured by mercury intrusion) and a bi-modal pore volume distribution character, where the two modes are separated by 10 to 200 ?, and the primary pore mode is larger than the median pore diameter (MPD), calculated either by volume or by surface area, the MPD by volume being itself larger than the MPD by surface area. Also provided are catalysts made from and processes using such alumina.

Abstract: A method for making alumina having a pore structure characterized by the absence of macropores, no more than 5% of the total pore volume in pores greater than 350 Å, a high pore volume (greater than 0.8 cc/g measured by mercury intrusion) and a bi-modal pore volume distribution character, where the two modes are separated by 10 to 200 Å, and the primary pore mode is larger than the median pore diameter (MPD), calculated either by volume or by surface area, the MPD by volume being itself larger than the MPD by surface area. Alumina made by such process and catalyst made therefrom.

Abstract: High phosphorus polyphosphides, namely MP.sub.x, where M is an alkali metal (Li, Na, K, Rb, and Cs) or metals mimicking the bonding behavior of an alkali metal, and x=7 to 15 or very much greater than 15 (new forms of phosphorus) are useful semiconductors in their crystalline, polycrystalline and amorphous forms (boules and films). MP.sub.15 appears to have the best properties and KP.sub.15 is the easier to synthesize. P may include other pnictides as well as other trivalent atomic species. Resistance lowering may be accomplished by doping with Ni, Fe, Cr, and other metals having occupied d or f outer electronic levels; or by incorporation of As and other pnictides. Top contacts forming junction devices doped with Ni and employing Ni as a back contact comprise Cu, Al, Mg, Ni, Au, Ag, and Ti. Photovoltaic, photoresistive, and photoluminescent devices are also disclosed. All semiconductor applications appear feasible.

Abstract: High phosphorus polyphosphides, namely MP.sub.x, where M is an alkali metal (Li, Na, K, Rb, and Cs) or metals mimicking the bonding behavior of an alkali metal, and x=7 to 15 or very much greater than 15 (new forms of phosphorus) are useful semiconducutors in their crystalline, polycrystalline and amorphous forms (boules and films). MP.sub.15 appears to have the best properties and KP.sub.15 is the easier to synthesize. P may include other pnictides as well as other trivalent atomic species. Resistance lowering may be accomplished by doping with Ni, Fe, Cr, and other metals having occupied d or f outer electronic levels; or by incorporation of As and other pnictides. Top contacts forming junction devices doped with Ni and employing Ni as a back contact comprise Cu, Al, Mg, Ni, Au, Ag, and Ti. Photovoltaic, photoresistive, and photoluminescent devices are also disclosed. All semiconductor applications appear feasible.

Abstract: High phosphorus polyphosphides, namely MP.sub.x, where M is an alkali metal (Li, Na, K, Rb, and Cs) or metals mimicking the bonding behavior of an alkali metal, and x=7 to 15 or very much greater than 15 (new forms of phosphorus) are useful semiconductors in their crystalline, polycrystalline and amorphous forms (boules and films). MP.sub.15 appears to have the best properties and KP.sub.15 is the easier to synthesize. P may include other pnictides as well as other trivalent atomic species. Resistance lowering may be accomplished by doping with Ni, Fe, Cr, and other metals having occupied d or f outer electronic levels; or by incorporation of As and other pnictides. Top contacts forming junction devices doped with Ni and employing Ni as a back contact comprise Cu, Al, Mg, Ni, Au, Ag, and Ti. Photovoltaic, photoresistive, and photoluminescent devices are also disclosed. All semiconductor applications appear feasible.

Abstract: High phosphorus polyphosphides, namely MP.sub.x, where M is an alkali metal (Li, Na, K, Rb, and Cs) or metals mimicking the bonding behavior of an alkali metal, and where x=7 to 15 or very much greater than 15 (new forms of phosphorus) are useful semiconductors in their crystalline, polycrystalline and amorphous forms (boules and films). MP.sub.15 appears to have the best properties and KP.sub.15 is the easier to synthesize. P may include other pnictides as well as other trivalent atomic species. Resistance lowering may be accomplished by doping with Ni, Fe, Cr, and other metals having occupied d or f outer electronic levels; or by incorporation of As and other pnictides. Rectifying Schottky junction devices doped with Ni and employing Ni as a back contact comprise Cu, Al, Mg, Ni, Au, Ag, and Ti as junction forming top contacts. Photovoltaic, photoresistive, and photoluminescent devices are also disclosed. All semiconductor applications appear feasible.

Abstract: MP.sub.15, where M is an alkali metal is used in a generator of P.sub.4 gas. KP.sub.15 is preferred. The generator is heated to produce the P.sub.4 gas. The generator may be used in various deposition processes such as chemical vapor deposition, vacuum evaporation, and molecular beam deposition. It is particularly useful in high vacuum processes below 10.sup.-3 Torr, particularly below 10.sup.-4 Torr such as vacuum evaporation and molecular beam deposition, for example vapor phase epitaxy and molecular beam epitaxy.

Abstract: Monoclinic phosphorus is produced in a single source vapor transport apparatus comprising a sealed evacuated ampoule containing a mixture or compound of phosphorus and an alkali metal with the phosphorus to alkali metal ratio being 11 or greater. The charge is heated to 550.degree.-560.degree. C. and the monoclinic phosphorus crystals are formed on the cooler surface at the top of the ampoule over the temperature range of 500.degree.-560.degree. C. The preferred heating temperature is in the neighborhood of 555.degree. C. and the preferred deposition temperature is in the neighborhood of 539.degree. C. Alkali metals that may be employed include sodium, potassium, rubidium and cesium. The monoclinic phosphorus crystals form in two habits. Those formed in the presence of sodium and cesium are in the form of flat square platelets up to 4 mm on a side and 2 mm thick. These platelets may be easily cleaved into thinner platelets, like mica.

Abstract: Polycrystalline and monocrystalline potassium polyphosphide, KP.sub.15, has been grown from the liquid phase at a temperature range of 600.degree.-700.degree. C. Massive crystallization of KP.sub.15 whiskers and platelets is observed. Crystalline KP.sub.15 films have been grown on gallium arsenide (110) and gallium phosphide (111) polished wafers, silicon (110) polished wafers, quartz, on a nickel evaporated 2000 angstrom nickel layer on quartz, and on nickel foil. Microcrystalline KP.sub.15 formed by a condensed phase process is incorporated into a sealed ampule evacuate 10.sup.-4 torr. The temperature is raised to 655.degree. C. and the furnace tilted to bring the melt in contact with the substrates. The temperature is then reduced to 640.degree. C. and the furnace is tilted back to the original position. Large KP.sub.15 whiskers several millimeters in size are grown from the melt and crystalline films of KP.sub.15 are grown topotaxially on gallium arsenide and gallium phosphide.

Abstract: High phosphorus polyphosphides, namely MP.sub.x, where M is an alkali metal (Li, Na, K, Rb, and Cs) or metals mimicking the bonding behavior of an alkali metal, and where x=7 to 15 or very much greater than 15 (new forms of phosphorus) are useful semiconductors in their crystalline, polycrystalline and amorphous forms (boules and films). MP.sub.15 appears to have the best properties and KP.sub.15 is the easier to synthesize. P may include other pnictides as well as other trivalent atomic species. Resistance lowering may be accomplished by doping with Ni, Fe, Cr, and other metals having occupied d or f outer electronic levels; or by incorporation of As and other pnictides. Rectifying Schottky junction devices doped with Ni and employing Ni as a back contact comprise Cu, Al, Mg, Ni, Au, Ag, and Ti as junction forming top contacts. Photovoltaic, photoresistive, and photoluminescent devices are also disclosed. All semiconductor applications appear feasible.

Abstract: Dicalcium phosphate dihydrate composition having improved monofluorophosphate compatibility are prepared by the addition of magnesium oxide and pyrophosphoric acid to the reaction mixture, and terminating the reaction by which the dicalcium phosphate dihydrate is formed at a low pH.

Abstract: A substantially agglomeration-free, finely divided catalyst component which is suitable for use as a cocatalyst with organoaluminum compounds in the polymerization of alpha olefins, which is formed by grinding a titanium trichloride material, an effective amount of an electron pair donor compound to enhance the performance of said catalyst component, and an effective amount for agglomeration control of an agglomeration control agent. The agglomeration control agent is effective in either reducing the attractive forces between the finely divided particles in the catalyst component or by preventing the close approach of these particles which would result in agglomeration.

Abstract: Novel self-setting potassium-aluminum-phosphate compositions of matter are prepared by forming an aqueous slurry of a potassium source, an aluminum source and a phosphate source; mixing the slurry for a period of time sufficient to form a reactive, creamy mass having a viscosity of at least 2000 cps; and setting or curing the reactive creamy mass. The product is porous, can be foamed or nonfoamed, adheres well to substrates and when foamed, can be lightweight.

Abstract: A substantially agglomeration-free, finely divided catalyst component which is suitable for use as a cocatalyst with organoaluminum compounds in the polymerization of alpha olefins, which is formed by grinding a titanium trichloride material, an effective amount of an electron pair donor compound to enhance the performance of said catalyst component, and an effective amount for agglomeration control of an agglomeration control agent. The agglomeration control agent is effective in either reducing the attractive forces between the finely divided particles in the catalyst component or by preventing the close approach of these particles which would result in agglomeration.