Patents by Inventor Christian George
Christian George has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11967556Abstract: Methods for forming microelectronic devices include forming a staircase structure in a stack structure having a vertically alternating sequence of insulative and conductive materials arranged in tiers. Steps are at lateral ends of the tiers. Contact openings of different aspect ratios are formed in fill material adjacent the staircase structure, with some openings terminating in the fill material and others exposing portions of the conductive material of upper tiers of the stack structure. Additional conductive material is selectively formed on the exposed portions of the conductive material. The contact openings initially terminating in the fill material are extended to expose portions of the conductive material of lower elevations. Contacts are formed, with some extending to the additional conductive material and others extending to conductive material of the tiers of the lower elevations. Microelectronic devices and systems incorporating such staircase structures and contacts are also disclosed.Type: GrantFiled: October 25, 2021Date of Patent: April 23, 2024Inventors: Biow Hiem Ong, David A. Daycock, Chieh Hsien Quek, Chii Wean Calvin Chen, Christian George Emor, Wing Yu Lo
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Patent number: 11944445Abstract: A method for automatically detecting elements of interest in electrophysiological signals includes: delivering electrophysiological signals; producing a whitened time-frequency representation of the electrophysiological signals; setting a threshold; applying this threshold to the whitened time-frequency representation; and, in the whitened time-frequency representation, detecting local maxima that are higher than or equal to the applied threshold.Type: GrantFiled: February 28, 2017Date of Patent: April 2, 2024Assignees: UNIVERSITÉ D'AIX-MARSEILLE (AMU), INSTITUT NATIONAL DE LA SANTÉ ET DE LA RECHERCHE MÉDICALE, ASSISTANCE PUBLIQUE—HÔPITAUX DE MARSEILLE (AP-HM)Inventors: Nicolas Roehri, Christian George Benar, Fabrice Bartolomei
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Publication number: 20240065773Abstract: The present invention relates to guidance during a medical intervention. In order to provide an improved navigation support with a facilitated setup, a system (10) for navigation support is provided. An image data input (12) receives a plurality of acquired 2D X-ray images of a subject's body from different angles. A set of markers, which are visible in X-ray images and which are detectable by a navigation system, is assigned to the subject. A marker detecting arrangement (16) is provided that detects a current spatial location of the markers assigned to the subject. A data processor (14) reconstructs a 3D volume of the subject based on the plurality of 2D X-ray images. At least a part of the markers is arranged outside the volume covered by the reconstructed 3D volume of the subject, while the markers are visible in the 2D X-ray images.Type: ApplicationFiled: December 28, 2021Publication date: February 29, 2024Inventors: RONALDUS FREDERIK JOHANNES HOLTHUIZEN, ROBERT JOHANNES FREDERIK HOMAN, JARICH WILLEM SPLIETHOFF, BERNARDUS HENDRIKUS WILHELMUS HENDRIKS, PETER GEORGE VAN DE HAAR, JOHANNEKE GERRIGJE GROEN, JAN RONGEN, EDWARD VUURBERG, JOHAN JULIANA DRIES, CHRISTIAN REICH, KESHAV SIMHADRI
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Publication number: 20240067734Abstract: The present invention generally relates to antibodies that bind to NKG2D, including multispecific antigen binding molecules e.g. for activation of T cells and/or NK cells. In addition, the present invention relates to polynucleotides encoding such antibodies, and vectors and host cells comprising such polynucleotides. The invention further relates to methods for producing the antibodies, and to methods of using them in the treatment of disease.Type: ApplicationFiled: October 24, 2023Publication date: February 29, 2024Applicant: Hoffmann-La Roche Inc.Inventors: Stefan DENGL, Guy GEORGES, Ralf HOSSE, Inja WALDHAUER, Christian KLEIN, Pablo UMANA
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Patent number: 11791268Abstract: Described are methods for forming a tungsten conductive structure over a substrate, such as a semiconductor substrate. Described examples include forming a silicon-containing material, such as a doped silicon-containing material, over a supporting structure. The silicon-containing material is then subsequently converted to a tungsten seed material containing the dopant material. A tungsten fill material of lower resistance will then be formed over the tungsten seed material.Type: GrantFiled: February 7, 2022Date of Patent: October 17, 2023Assignee: Micron Technology, Inc.Inventors: Jordan D. Greenlee, Christian George Emor, Travis Rampton, Everett Allen McTeer, Rita J. Klein
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Patent number: 11638920Abstract: The present invention relates to the field of high throughput analysis of samples. In particular, the present invention is directed to a device, a System and a method for simultaneous tempering of multiple samples. More particular, the invention relates to the simultaneous thermocycling of multiple samples to perform PCR in a microtiter plate format.Type: GrantFiled: February 16, 2022Date of Patent: May 2, 2023Assignee: Roche Molecular Systems, Inc.Inventors: Thomas Schlaubitz, Torsten Burdack, Paul Federer, Christian George, Guido Grueter, Andreas Scholle, Guenter Tenzler
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Publication number: 20220302032Abstract: A microelectronic device includes a first conductive structure, a barrier structure, a conductive liner structure, and a second conductive structure. The first conductive structure is within a first filled opening in a first dielectric structure. The barrier structure is within the first filled opening in the first dielectric structure and vertically overlies the first conductive structure. The conductive liner structure is on the barrier structure and is within a second filled opening in a second dielectric structure vertically overlying the first dielectric structure. The second conductive structure vertically overlies and is horizontally surrounded by the conductive liner structure within the second filled opening in the second dielectric structure. Memory devices, electronic systems, and methods of forming microelectronic devices are also described.Type: ApplicationFiled: June 10, 2022Publication date: September 22, 2022Inventors: Jordan D. Greenlee, Christian George Emor, Luca Fumagalli, John D. Hopkins, Rita J. Klein, Christopher W. Petz, Everett A. McTeer
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Publication number: 20220230962Abstract: Described are methods for forming a tungsten conductive structure over a substrate, such as a semiconductor substrate. Described examples include forming a silicon-containing material, such as a doped silicon-containing material, over a supporting structure. The silicon-containing material is then subsequently converted to a tungsten seed material containing the dopant material. A tungsten fill material of lower resistance will then be formed over the tungsten seed material.Type: ApplicationFiled: February 7, 2022Publication date: July 21, 2022Inventors: Jordan D. Greenlee, Christian George Emor, Travis Rampton, Everett Allen McTeer, Rita J. Klein
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Patent number: 11393756Abstract: A microelectronic device includes a first conductive structure, a barrier structure, a conductive liner structure, and a second conductive structure. The first conductive structure is within a first filled opening in a first dielectric structure. The barrier structure is within the first filled opening in the first dielectric structure and vertically overlies the first conductive structure. The conductive liner structure is on the barrier structure and is within a second filled opening in a second dielectric structure vertically overlying the first dielectric structure. The second conductive structure vertically overlies and is horizontally surrounded by the conductive liner structure within the second filled opening in the second dielectric structure. Memory devices, electronic systems, and methods of forming microelectronic devices are also described.Type: GrantFiled: March 16, 2020Date of Patent: July 19, 2022Assignee: Micron Technology, Inc.Inventors: Jordan D. Greenlee, Christian George Emor, Luca Fumagalli, John D. Hopkins, Rita J. Klein, Christopher W. Petz, Everett A. McTeer
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Publication number: 20220168744Abstract: The present invention relates to the field of high throughput analysis of samples. In particular, the present invention is directed to a device, a System and a method for simultaneous tempering of multiple samples. More particular, the invention relates to the simultaneous thermocycling of multiple samples to perform PCR in a microtiter plate format.Type: ApplicationFiled: February 16, 2022Publication date: June 2, 2022Applicant: Roche Molecular Systems, Inc.Inventors: Thomas Schlaubitz, Torsten Burdack, Paul Federer, Christian George, Guido Grueter, Andreas Scholle, Guenter Tenzler
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Patent number: 11285488Abstract: The present invention relates to the field of high throughput analysis of samples. In particular, the present invention is directed to a device, a System and a method for simultaneous tempering of multiple samples. More particular, the invention relates to the simultaneous thermocycling of multiple samples to perform PCR in a microtiter plate format.Type: GrantFiled: August 8, 2018Date of Patent: March 29, 2022Assignee: Roche Molecular Systems, Inc.Inventors: Thomas Schlaubitz, Torsten Burdack, Paul Federer, Christian George, Guido Grueter, Andreas Scholle, Guenter Tenzler
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Publication number: 20220045007Abstract: Methods for forming microelectronic devices include forming a staircase structure in a stack structure having a vertically alternating sequence of insulative and conductive materials arranged in tiers. Steps are at lateral ends of the tiers. Contact openings of different aspect ratios are formed in fill material adjacent the staircase structure, with some openings terminating in the fill material and others exposing portions of the conductive material of upper tiers of the stack structure. Additional conductive material is selectively formed on the exposed portions of the conductive material. The contact openings initially terminating in the fill material are extended to expose portions of the conductive material of lower elevations. Contacts are formed, with some extending to the additional conductive material and others extending to conductive material of the tiers of the lower elevations. Microelectronic devices and systems incorporating such staircase structures and contacts are also disclosed.Type: ApplicationFiled: October 25, 2021Publication date: February 10, 2022Inventors: Biow Hiem Ong, David A. Daycock, Chieh Hsien Quek, Chii Wean Calvin Chen, Christian George Emor, Wing Yu Lo
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Patent number: 11244903Abstract: Described are methods for forming a tungsten conductive structure over a substrate, such as a semiconductor substrate. Described examples include forming a silicon-containing material, such as a doped silicon-containing material, over a supporting structure. The silicon-containing material is then subsequently converted to a tungsten seed material containing the dopant material. A tungsten fill material of lower resistance will then be formed over the tungsten seed material.Type: GrantFiled: December 30, 2019Date of Patent: February 8, 2022Assignee: Micron Technology, Inc.Inventors: Jordan D. Greenlee, Christian George Emor, Travis Rampton, Everett Allen McTeer, Rita J. Klein
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Patent number: 11158577Abstract: Methods for forming microelectronic devices include forming a staircase structure in a stack structure having a vertically alternating sequence of insulative and conductive materials arranged in tiers. Steps are at lateral ends of the tiers. Contact openings of different aspect ratios are formed in fill material adjacent the staircase structure, with some openings terminating in the fill material and others exposing portions of the conductive material of upper tiers of the stack structure. Additional conductive material is selectively formed on the exposed portions of the conductive material. The contact openings initially terminating in the fill material are extended to expose portions of the conductive material of lower elevations. Contacts are formed, with some extending to the additional conductive material and others extending to conductive material of the tiers of the lower elevations. Microelectronic devices and systems incorporating such staircase structures and contacts are also disclosed.Type: GrantFiled: January 31, 2020Date of Patent: October 26, 2021Assignee: Micron Technology, Inc.Inventors: Biow Hiem Ong, David A. Daycock, Chieh Hsien Quek, Chii Wean Calvin Chen, Christian George Emor, Wing Yu Lo
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Publication number: 20210287990Abstract: A microelectronic device comprises a first conductive structure, a barrier structure, a conductive liner structure, and a second conductive structure. The first conductive structure is within a first filled opening in a first dielectric structure. The barrier structure is within the first filled opening in the first dielectric structure and vertically overlies the first conductive structure. The conductive liner structure is on the barrier structure and is within a second filled opening in a second dielectric structure vertically overlying the first dielectric structure. The second conductive structure vertically overlies and is horizontally surrounded by the conductive liner structure within the second filled opening in the second dielectric structure. Memory devices, electronic systems, and methods of forming microelectronic devices are also described.Type: ApplicationFiled: March 16, 2020Publication date: September 16, 2021Inventors: Jordan D. Greenlee, Christian George Emor, Luca Fumagalli, John D. Hopkins, Rita J. Klein, Christopher W. Petz, Everett A. McTeer
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Publication number: 20210242131Abstract: Methods for forming microelectronic devices include forming a staircase structure in a stack structure having a vertically alternating sequence of insulative and conductive materials arranged in tiers. Steps are at lateral ends of the tiers. Contact openings of different aspect ratios are formed in fill material adjacent the staircase structure, with some openings terminating in the fill material and others exposing portions of the conductive material of upper tiers of the stack structure. Additional conductive material is selectively formed on the exposed portions of the conductive material. The contact openings initially terminating in the fill material are extended to expose portions of the conductive material of lower elevations. Contacts are formed, with some extending to the additional conductive material and others extending to conductive material of the tiers of the lower elevations. Microelectronic devices and systems incorporating such staircase structures and contacts are also disclosed.Type: ApplicationFiled: January 31, 2020Publication date: August 5, 2021Inventors: Biow Hiem Ong, David A. Daycock, Chieh Hsien Quek, Chii Wean Calvin Chen, Christian George Emor, Wing Yu Lo
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Publication number: 20210202388Abstract: Described are methods for forming a tungsten conductive structure over a substrate, such as a semiconductor substrate. Described examples include forming a silicon-containing material, such as a doped silicon-containing material, over a supporting structure. The silicon-containing material is then subsequently converted to a tungsten seed material containing the dopant material. A tungsten fill material of lower resistance will then be formed over the tungsten seed material.Type: ApplicationFiled: December 30, 2019Publication date: July 1, 2021Inventors: Jordan D. Greenlee, Christian George Emor, Travis Rampton, Everett Allen McTeer, Rita J. Klein
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Patent number: 10637833Abstract: A method of protecting data is disclosed herein. The method comprises: encrypting a data in a protected data item using a first encryption key; and encrypting the first encryption key in the protected data item using a second encryption key that is unique to the protected data item, wherein the unique second encryption key is derived from a third encryption key in the protected data item and to a plurality of protected data items comprising a common characteristic shared with the protected data item.Type: GrantFiled: September 30, 2014Date of Patent: April 28, 2020Assignee: CRYPTOMILL INC.Inventors: Chen Li Tien, Joseph Mari Villamor Ocol, Deepu Filji, Cristian Sebastian Niculescu, Ivan Canute Serrao, Christian George Batty, Nandini Jolly
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Publication number: 20190070611Abstract: The present invention relates to the field of high throughput analysis of samples. In particular, the present invention is directed to a device, a System and a method for simultaneous tempering of multiple samples. More particular, the invention relates to the simultaneous thermocycling of multiple samples to perform PCR in a microtiter plate format.Type: ApplicationFiled: August 8, 2018Publication date: March 7, 2019Inventors: Thomas Schlaubitz, Torsten Burdack, Paul Federer, Christian George, Guido Grueter, Andreas Scholle, Guenter Tenzler
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Publication number: 20190029550Abstract: The invention relates to a method for automatically detecting elements of interest in electrophysiological signals, and to a detector for implementing such a method. The method according to the invention comprises steps in which: electrophysiological signals are delivered; a whitened time-frequency representation of said electrophysiological signals is produced; a threshold is set; this threshold is applied to the whitened time-frequency representation; and, in the whitened time-frequency representation, local maxima that are higher than or equal to the applied threshold are detected.Type: ApplicationFiled: February 28, 2017Publication date: January 31, 2019Applicants: UNIVERSITÉ D'AIX-MARSEILLE (AMU), INSTITUT NATIONAL DE LA SANTÉ ET DE LA RECHERCHE MÉDICALE, ASSISTANCE PUBLIQUE - HÔPITAUX DE MARSEILLE (AP-HM)Inventors: Nicolas Roehri, Christian George Benar, Fabrice Bartolomei